Nec Corporation

Sony Corporation

Mitsui Toatsu Chemicals, Incorporated

Oji Paper Co., Ltd.

Vpec, Inc.

Akio Tanaka

Kentaro Odaka

Shinichi Fukuda

Nobukazu Teranishi

Hiromu Ishikawa

Satoshi Nagata

Shinji Kobayashi

Hiroshi Kodama

Kiyoshi Yanagisawa

Yoshinobu Kure

Kensaku Wakuda

Shunsuke Miura

Teruo Hyugaji

Itsuro Yamamoto

Hisato Hirosaka

Katsumi Kaneda

Nobuo Kuroda

Noriaki Matsuda

A near-field wireless communication circuitincluded in a terminalA can perform switching between a normal mode and a near mode which has a relatively short communicable distance and a relatively high transmission rate as compared with those in the normal mode. Further, a controllerexecutes preliminary processing for starting data transmission and reception in the near mode to/from a terminalB serving as a communication destination between the terminalsA andB by using the near-field wireless communication circuitwhich is set to the normal mode. Further, the controllerdetermines the availability of the data transmission and reception in the near mode to/from the terminalB by using a measured value of communication quality which has a correlation with a communication distance to the terminalB as a measure of the determination. Furthermore, when it is determined that the data transmission and reception in the near node are available, the controllerstarts the data transmission and reception to/from the terminalB by using the near-field wireless communication circuitwhich is set to the near mode, based on a result of the preliminary processing executed in the normal mode in advance.

Wireless communication device, wireless communication system, controlling method for wireless communication device, and recording medium

There is provided a communication device including a communication state determination section which determines a communication state corresponding to a transmission rate demanded from a simulation engine based on a transmission rate and a state of communication at the transmission rate between a first communication state measurement device and a second communication state measurement device via a real network, a traffic generation section which generates traffic by creating data based on the communication state determined by the communication state determination section, a protocol processing section which creates a packet including the data created by the traffic generation section, and a communication section which transmits the packet created by the protocol processing section to another communication device.

Communication device, communication method, and program

To improve operability by a user in a case of performing data transfer wirelessly in a near area, a near-field wireless communication circuitincluded in a terminalA is able to switch between a normal mode to perform OFDM and a near mode with a relatively short communicable distance as compared with that in the first communication mode and to perform spread spectrum. A controllerexecutes preliminary processing needed for initiating data transfer in the near mode with a terminalB serving as a communication destination between the terminalsA andB by using the near-field wireless communication circuitwhich is set to the normal mode. Further, the controllerdetermines availability of the data transfer in the near mode with the terminalB by using a measured value of communication quality which has a correlation with a communication distance to the terminalB as a measure of the determination. Furthermore, when it is determined that the data transfer in the near mode is available, the controllerinitiates the data transfer with the terminalB by using the near-field wireless communication circuitwhich is set to the near mode, based on a result of the preliminary processing executed in the normal mode in advance.

Wireless communication device, wireless communication system, controlling method for wireless communication device, and recording medium storing program

The electric power supply and demand control device judges whether or not electric power shortage is occurred or whether or not electric power surplus is occurred in the electric power supplier and demander provided with the electric power supply and demand control device based on data on total electric energy, the amount of maximum electric power demanded, and the amount of total electric power demanded of the following day in each electric power supplier and demander, predicted by a neural network; receives electric power from other electric power suppliers and demanders provided with the power generation devices and/or the electrical storage devices in the case where electric power shortage is occurred in the electric power supplier and demander; and controls to deliver electric power to other electric power suppliers and demanders in the case where electric power surplus is occurred in the electric power supplier and demander.

Electric power system

A signal processing circuit, a signal processing method and a recording medium suppressing occurrence of unnecessary waves are provided. A timing generation means which generates timing to select a signal of a predetermined local frequency in a set time period and not to select any signal of all local frequencies in a different set time period, and a plurality of switches which switch over a signal of the local frequency from each multiband generator to the transmission mixer by an instruction from the timing generation means are included.

Signal processing circuit, signal processing method and recording medium

A receiver includes: an amplifier that amplifies a received broadband signal up to a predetermined level; a first switch that switches an output signal from the amplifier; a signal generator that generates a signal for controlling a switching operation of the first switch; an integration capacitor that integrates an output signal from the first switch; a comparator that compares an output voltage from the integration capacitor with a predetermined voltage; and a reset circuit that discharges electrical charges accumulated in the integration capacitor based on a comparison result from the comparator.

Receiver and wireless communication system equipped with the same

A plurality of circuit blocks are provided in a semiconductor device which collects and corrects impairment quantities of discretionary areas in a circuit group of various types having random couplings. The semiconductor device is provided with a detector, which is arranged in each circuit block and detects an electric signal of an element in the circuit block; a wiring wherein each detector output passes through; a plurality of switches for feeding the wiring with each detector output; and a buffer connected to the wiring and passes through a direct current voltage.

Semiconductor device

A frequency synthesizer switches the frequency at a high rate, is of low power consumption, and has a high signal-to-noise ratio. CMOS quadrature VCOsgenerate and output four-phase signals, respectively. CMOS selectorselects either one of two four-phase signalsgenerated by CMOS quadrature VCOsand outputs the selected signal as output signal. CMOS SSB mixermultiplies output signalselected by CMOS selectorand four-phase input signalinput from an external source by each other to generate a signal having a frequency represented by the sum of, or the difference between, the frequency of output signaland the frequency of four-phase input signal, and outputs the generated signal as output signal. CML bufferadjusts the level of output signalfrom CMOS SSB mixerand outputs the level-adjusted signal to another circuit.

Frequency synthesizer having improved frequency hopping

It is an object of the present invention to provide a semiconductor apparatus for solving a trade-off between the area, power consumption, noise and accuracy of correction of a variation correction circuit that corrects variations in resistance and threshold voltage, etc. The present invention comprises a multi-value voltage generation circuit shared by a plurality of reading circuits, a multi-value voltage bus that supplies multi-value voltages to the reading circuits and switches that select a voltage suited to variation correction from multi-value voltages, wherein the multi-value voltages are distributed from the multi-value voltage generation circuit to the plurality of reading circuits, the switches select an optimum voltage for correction in the respective reading circuits to thereby correct variations in the elements.

Semiconductor apparatus

A resonance circuit comprising, for example, an inductor and a plurality of capacitors is provided as a load of a transistor. The capacitors are changed over by a switch. As the capacitors are changed over by the switch, a resonance frequency is changed according to the invention the frequency hopping of an input signal. To cancel ringing that occurs at the time of the switching action, a transistor which cancels gate feed through is added to the switch. An inductor is provided at the gate in order to suppress a gain reduction and an increase in noise factor in a high-frequency range. This provides a compact, wide-band amplifier which has low noise, a wide gain and low power consumption.

High-frequency amplification circuit

An imaging device includes a plurality of detectors for converting an electromagnetic radiation into electric signals, a first regulated constant-current source for supplying a constant bias current to the detectors, and a second regulated constant-current source connected to the first regulated constant-current source, for correcting variations of the detectors. The second regulated constant-current source is effective for correcting variations of pixels due to variations of amplifying elements.

Imaging device with fixed-pattern-noise correction regulated constant-current source

A thermal-type infrared imaging device includes a first thermo-electric converting element ( ) for generating an electric signal which corresponds to temperature determined according to heat generated by absorbing an incident infrared ray, a first bipolar transistor ( ) having its emitted connected to the first thermo-electric converting element ( ), and a second bipolar transistor ( ) having its collector connected to the collector of the first bipolar transistor ( ). The thermal-type infrared imaging device further includes a resistor ( ) connected at one end thereof to a power supply and at the other end to the emitter of the second bipolar transistor ( ), and an integration capacitor ( ) connected to a connecting point of the respective collectors of the first and second bipolar transistor ( and ).

Thermal-type infrared imaging device

An imaging device has a control block for offsetting signal levels and controlling the amplification factor for the signal levels within one frame. The imaging device can image a subject having low-illuminance and high-illuminance areas without reduction in the sensitivity, and allows a wide dynamic range and high sensitivity to be achieved real-time. The imaging device thus can image subjects of different illuminance levels ranging from a low-illuminance subject to a high-illuminance subject, and can differentiate small illuminance distributions.

Imaging device

A semiconductor device having a large bias component detects a faint signal component on the bias component, includes a first bias circuit with a reference resistance connected to a measuring resistance group and having the same resistance temperature coefficient as the measuring resistance, a second bias circuit provided with a reference resistance being connected to a cancel resistance and having the same resistance temperature coefficient as the cancel resistance, and a third bias circuit provided with a reference resistance being connected to a correction resistance and having the same resistance temperature coefficient as the correction resistance. The first bias circuit is for applying the output voltage to the measuring resistance group; the second bias circuit is for applying the output voltage to the cancel resistance; and the third bias circuit is for applying the output voltage to the correction resistance.

Growing community of inventors

Tokyo, Japan

Akio Tanaka