Shin-Etsu Handotai Co., Ltd.

Shin-Etsu Handotai Kabushiki Kaisha

Akio Nakamura

Susumu Higuchi

Munehisa Yanagisawa

Hitoshi Ikeda

Toshio Otaki

Nobuhiko Noto

Takao Takenaka

Masahisa Endo

Keizo Adomi

Yuuki Tamura

Kingo Suzuki

Masayuki Shinohara

Yu K Tamura

Toshio Ootaki

Aiming at providing a method of fabricating a light emitting device having an AlGaInP light emitting section, less causative of crack by cleavage, on the edge portions on the back surface of the device chip in process of dicing or breaking, a light emitting device wafer is diced along a dicing line inclined at an angle of 15&#xb0; to 30&#xb0;, both ends inclusive, away from a dicing line angle reference direction defined as the &#x3c;110&#x3e; direction on the (100) main surface.

Method of fabricating light emitting device and thus-fabricated light emitting device

A light emitting device chip is obtained by dicing a light emitting device wafer having a light emitting layer sectionbased on a double heterostructure in which a first-conductivity-type cladding layer, an active layerand an second-conductivity-type cladding layer, each of which being composed of a compound semiconductor having a composition allowing lattice matching with GaAs, out of compound semiconductors expressed by formula (AlGa)InP (where, 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1), are stacked in this order, and having the () surface appeared on the main surface thereof, and GaP transparent semiconductor layersstacked on the light emitting layer sectionas being agreed with the crystal orientation thereof, so that the {100} surfaces appear on the side faces of the GaP transparent semiconductor layer. Accordingly, there can be provided a method of fabricating a light emitting device having the AlGaInP light emitting layer section and the GaP transparent semiconductor layers, less causative of failures such as edge chipping during the dicing.

A light emitting device wafer having a light emitting layer sectionhaving an AlGaInP-base double heterostructure, and a GaP light extraction layerdisposed on the light emitting layer section so as to allow a first main surface thereof to compose a first main surface of the wafer is fabricated so that the first main surface of the GaP light extraction layer appears as the () surface. The first main surface of the GaP light extraction layercomposed of the () surface is etched using an etching solution for surface roughening to thereby form surface roughening projections. Accordingly, there can be provided a method of fabricating a light emitting device having the GaP light extraction layer agreed with the () main surface, capable of readily subjecting the () main surface to surface roughening.

A GaAsP-base light emitting element capable of sustaining an excellent light emission property for a long period, and a method for manufacturing thereof are provided. The light emitting element has a p-n junction interface responsible for light emission formed between a p-type GaAs P layer and an n-type GaAs P layer , and has a nitrogen-doped zone formed in a portion including the p-n junction interface between such p-type GaAs P layer and n-type GaAs P layer . Such element can be manufactured by fabricating a plurality of light emitting elements by varying nitrogen concentration Y of the nitrogen-doped zone while keeping a mixed crystal ratio a of the p-type GaAs P layer and n-type GaAs P layer constant; finding an emission luminance/nitrogen concentration relationship by measuring emission luminance of the individual light emitting elements; and adjusting the nitrogen concentration of the nitrogen-doped zone so as to fall within a range from 1.05Y to 1.5Y , where Y is defined as a peak nitrogen concentration whereat the emission luminance of the light emitting element will become maximum at a mixed crystal ratio a.

Light emitting element and method for manufacturing thereof

A semiconductor substrate for GaP type light emitting devices which includes an n-type single crystal substrate, an n-type GaP layer, and a p-type GaP layer formed on the n-type GaP single crystal substrate. The carbon concentration in the n-type GaP single crystal substrate is more than 1.0.times.10.sup.16 atoms/cc but less than 1.0.times.10.sup.17 atoms/cc. The n-type GaP single crystal substrate is obtained from an n-type GaP single crystal grown by the Liquid Encapsulation Czochralski method wherein B.sub.2 O.sub.3 containing water corresponding to 200 ppm or more is used as an encapsulation liquid.

Method for fabricating a gap type semiconductor substrate of red light

A GaP light emitting element substrate comprising an n-type GaP layer, a nitrogen-doped n-type GaP layer and a p-type GaP layer layered one after another on a multi-layer GaP substrate built by forming an n-type GaP buffer layer(s) on an n-type GaP single crystal substrate, wherein the sulfur (S) concentration in said n-type GaP buffer layer is made to be 5.times.10.sup.16 [atoms/cc] or less. The method of manufacturing it is as follows: an n-type GaP buffer layer(s) is formed on an n-type GaP single crystal substrate to prepare a multi-layer GaP substrate, then an n-type GaP layer, a nitrogen doped n-type GaP layer and a p-type GaP layer are layered on said multi-layer GaP substrate by means of the melt-back method to obtain a GaP light emitting element substrate, wherein the sulfur (S) concentration in said n-type GaP buffer layer is made to be 5.times.10.sup.16 [atoms/cc] or less when the multi-layer GaP substrate is prepared.

GaP light emitting substrate and a method of manufacturing it

An epitaxial layer(s) of compound semiconductor alloy doped with nitrogen and represented by the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0&lt;x.ltoreq.1, 0&lt;y.ltoreq.1) is formed on a compound semiconductor single crystal substrate composed of an element(s) from Group III and an element(s) from Group V in the periodic table by means of the metalorganic vapor phase epitaxy method (MOVPE method), while controlling the amount of the organic aluminum compound introduced. The organic aluminum compound is, for example, trimethyl aluminum (TMAl). The nitrogen-doped epitaxial layer is, for example, an active layer composed of said compound semiconductor alloy which has a band gap of 2.30 eV or larger and also has an alloy composition of an indirect transition area or similar to it.

Semiconductor light emitting device and methods of manufacturing it

A semiconductor substrate for GaP type light emitting devices which includes an n-type single crystal substrate, an n-type GaP layer, and a p-type GaP layer formed on the n-type GaP single crystal substrate. The carbon concentration in the n-type GaP single crystal substrate is more than 1.0.times.10.sup.16 atoms/cc, but less than 1.0.times.10.sup.17 atoms/cc. The n-type GaP single crystal substrate is obtained from an n-type GaP single crystal grown by the Liquid Encapsulation Czochralski method wherein B.sub.2 O.sub.3 containing water corresponding to 200 ppm or more is used as an encapsulation liquid.

Gap light emitting device having a low carbon content in the substrate

Semiconductor light emitting device with nitrogen doping

A GaP pure green light emitting element substrate comprising an n-type GaP layer 12 and a p-type GaP layer 14 formed on a GaP single crystal substrate 10, characterized by the fact that an intermediate GaP layer 13 is formed at the pn junction portion between said n-type GaP layer 12 and said p-type GaP layer 14, wherein said intermediate GaP layer has a donor concentration N.sub.D of less than 1.times.10.sup.-16 atoms/cm.sup.3 and an acceptor concentration N.sub.A nearly equal to the donor concentration N.sub.D. The thickness of the intermediate GaP layer 13 is in the range of 3-5 micrometers.

Gap pure green light emitting element substrate

A liquid-phase growth process of a compound semiconductor which is capable of effectively controlling the generation of a surface defect and improve the product quality and production yield is disclosed in which before the start of liquid-phase growth, a substrate and a solution are held in a 100% hydrogen atmosphere or a mixed gas atmosphere consisting of more than 80% of hydrogen and the rest of an inert gas, and immediately before the start of the liquid-phase growth, the atmosphere is changed to a mixed gas atmosphere consisting of not more than 60% of hydrogen and the rest of the inert gas.

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Annaka, Japan

Akio Nakamura