Canon Kabushiki Kaisha

Akio Mihara

Seiji Hashimoto

Yasuo Suda

Keiji Ohtaka

Toshiaki Sato

Ichiro Ohnuki

Tetsuo Yoshizawa

Taichi Sugimoto

Hiromichi Yamashita

A semiconductor optical device is provided with a photo-electric conversion unit having plural photo-electric conversion elements and is entirely sealed by a sealing member. The photo-electric conversion elements are connected to external leads with electrical connectors. The distance D between a planar outer surface and a photoelectric conversion area satisfies the equation, D.gtoreq./2.multidot.l/tan .theta., where .theta. is a critical angle of total reflection of the sealing member with respect to air and l is the maximum length of said photoelectric conversion area.

Semiconductor photo-sensor and method for manufacturing the same

In a color photoelectric conversion apparatus in which a plurality of semiconductor image sensors each having a plurality of light-receiving windows are arrayed, and a plurality of light-receiving windows in a main scanning direction constitute one color light-receiving element, the last light-receiving window or at least two light-receiving windows including the last light-receiving window of a first semiconductor image sensor of adjacent semiconductor image sensors, and the first light-receiving window or at least two light-receiving windows including the first light-receiving window of the next semiconductor image sensor constitute one color light-receiving element.

Color image sensor including plural light-receiving windows and color

In a method for manufacturing a semiconductor photo-sensor, an assembly including a photoelectric conversion element having a photoreceiving section, and a lead terminal having an inner lead connected to the photoelectric conversion element by a bonding wire is provided. A light transmitting member is also provided within the cavity spaced apart from the photoelectric conversion element and at a light-incident side of the photoelectric conversion element, the light transmitting member having an inner surface facing an upper surface of the photoelectric conversion element and an outer surface opposite the inner surface. The photoelectric conversion element, the inner lead and the bonding wire are sealed by introducing a light transmitting resin into the cavity so as to provide a relation l&lt;2.multidot.(d.sub.1 +d.sub.2).multidot.tan.theta..sub.1, wherein l is a length of the photoreceiving section of the photoelectric conversion element, d.sub.1 is a thickness of the light transmitting resin above the upper surface of the photoelectric conversion element, d.sub.2 is a thickness of the light transmitting member, and .theta..sub.1 is a total reflection angle of the outer surface of the light transmitting member.

Method for manufacturing a semiconductor photo-sensor

Multi-chip color image sensor with light-receiving windows arranged to

A method for producing a resin-sealed photoelectric converting device which eliminates the problem of uneven resin refractive index produced when the resin is injected past the lead wires and over the light receiving elements. The photoelectric converting device has a photoelectric converting element, and wires for electrically connecting electrodes of the photoelectric converting element with lead electrodes. A transparent portion is present on the light receiving portion of the photoelectric converting element. The method includes the steps of placing the photoelectric converting element and the lead electrodes in a mold cavity having a resin-injecting gate; and injecting resin from the gate and guiding the injected resin which bypasses said wires to an area away from the photoelectric converting portion, and sealing the entire photoelectric converting element with the injected resin. Since the resin which bypasses the wires does not cover the light receiving portion, any unevenness in the resin will not produce an uneven refractive index over the light receiving portion.

Growing community of inventors

Isehara, Japan

Akio Mihara