Canon Kabushiki Kaisha

Other

Akio Koganei

Harunobu Ogaki

Akira Shimada

Masataka Kawahara

Akio Maruyama

Toshihiro Kikuchi

Atsushi Ochi

Hiroki Uematsu

Takayuki Sumida

Kyoichi Teramoto

Toshio Adachi

Takashi Ikeda

Takashi Anezaki

Toshimori Miyakoshi

Hiroshi Echizen

Hirotoshi Uesugi

Shuichiro Sugiyama

Kunio Takada

Kazuoki Hongu

Takashi Kurokawa

Kazumasa Takatsu

Kazuhisa Okano

Naoki Nishimura

An image forming method is disclosed having a charging step, an exposure step, a developing step and a transfer step. This method uses a toner which includes toner particles containing a binder resin and a colorant, and inorganic fine powder, and uses a photosensitive member which has on its surface depressed portions which are independent of one another. The depressed portions have openings having an average minor-axis diameter Lpc satisfying the relationship of Dg&#x3c;Lpc&#x3c;Dt (Dt represents the weight-average particle diameter of the toner, and Dg represents the maximum number-average particle diameter among number-average particle diameter(s) of one or two or more types of inorganic fine powder constituting the inorganic fine powder, and the toner has an average circularity of from 0.925 to 0.995.

Image forming method, and electrophotographic apparatus making use of the image forming method

An electrophotographic photosensitive member is disclosed which is excellent in cleaning performance, has improved durability, and suppresses image defects in various environments. The electrophotographic photosensitive member has a support and a photosensitive layer provided on the support. Depressed portions independent of one another are formed on the surface of the electrophotographic photosensitive member so that the number of the depressed portions per 100 &#x3bc;m square is 76 or more and 1,000 or less. The openings of the depressed portions have an average major axis diameter of more than 3.0 &#x3bc;m and 14.0 &#x3bc;m or less.

Electrophotographic photosensitive member with depressed portions, process cartridge holding the electrophotographic photosensitive member and electrophotographic apparatus with the electrophotographic photosensitive member

A process for producing an electrophotographic photosensitive member, which has the step of bringing i) the surface of an electrophotographic photosensitive member having at least a charge transport layer on a cylindrical support and ii) a mold having a fine unevenness surface profile into pressure contact with each other to transfer the fine unevenness surface profile to the surface of the electrophotographic photosensitive member. The mold and the support are so temperature-controlled as to be T&#x3c;T&#x3c;Twhere the glass transition temperature of the charge transport layer is represented by T(&#xb0;C.), the temperature of the mold by T(&#xb0;C.), and the temperature of the support by T(&#xb0;C.).

Process for producing electrophotographic photosensitive member

An electrophotographic photosensitive member has a surface having a plurality of depressed portions, having a major-axis diameter Rpc of 0.1 to 10 &#x3bc;m, a minor-axis diameter Lpc of 0.1 to 10 &#x3bc;m and a deepest-part to opening distance Rdv of 0.1 to 10 &#x3bc;m. Where the surface is equally divided into 4 regions in the rotational direction, which are then equally divided into 25 regions in the direction falling at right angles with the rotational direction, to obtain 100-spot regions A in total, and, in each thereof, square regions B of 50 &#x3bc;m each per side one side of which is parallel to the rotational direction are provided and the regions B are each equally divided into 500 zones by straight lines parallel to the rotational direction, 400 to 499 lines among the straight lines pass through the depressed portions in each of the regions B.

Electrophotographic photosensitive member, process cartridge, and electrophotographic apparatus

An electrophotographic photosensitive member has, on the surface of its photosensitive layer, has a plurality of depressed portions which are independent from one another, and, where the major-axis diameter of each depressed portion is represented by Rpc and the depth that shows the distance between the deepest part of each depressed portion and the opening thereof is represented by Rdv, the depressed portions each have a ratio of depth to major-axis diameter, Rdv/Rpc, of from more than 1.0 to 7.0 or less.

The present invention provides a magnetoresistive element in which a first magnetic layer and a second magnetic layer whose coercive forces are different, and a non-magnetic layer that is disposed between the magnetic layers, wherein edges of the magnetoresistive element are tapered, or a magnetoresistive element in which a first magnetic layer and a second magnetic layer, and a non-magnetic layer that is disposed between the magnetic layers, wherein the coercive force of the first magnetic layer is larger than the coercive force of the second magnetic layer, and wherein relation between a base area Sof the first magnetic layer and a base area Sof the second magnetic layer is S&#x3e;S

Tapered angle magnetoresistive element and nonvolatile solid-state memory using the same

A magnetoresistive film includes a nonmagnetic film, and a structure in which magnetic films are formed on the two sides of the nonmagnetic film. At least one of the magnetic films is a perpendicular magnetization film. A magnetic film whose easy axis of magnetization is inclined from a direction perpendicular to the film surface is formed at a position where the magnetic film contacts the perpendicular magnetization film but does not contact the nonmagnetic film. A memory, magnetic element, magnetoresistive element, and magnetic element manufacturing method are also disclosed.

Magnetoresistive element, memory element having the magnetoresistive element, and memory using the memory element

Magnetoresistance effect type memory, and method and device for reproducing information from the memory

A memory device using giant magnetoresistance (GMR) effect, and an inexpensive memory device that has low power consumption, excels in memory performance, and is suitable for use in computer peripherals. The memory device utilizes giant magnetoresistance effect and includes a substrate with an insulating surface; a monocrystalline semiconductor layer formed on the insulating surface of the substrate, a switching element formed at least on part of the monocrystalline semiconductor layer, a magnetoresistive film formed on the insulating surface of the substrate, the magnetoresistive film comprising a first magnetic layer and a second magnetic layer which has a higher coercive force than the first magnetic layer and which is stacked on the first magnetic layer with a non-magnetic layer interposed between them, and a word line installed near the magnetoresistive film with an insulating layer interposed between them, and the switching element is connected electrically to either the magnetoresistive film or word line.

Memory device utilizing giant magnetoresistance effect

A microwave plasma processing apparatus comprises a vacuum processing chamber, a substrate disposed within the vacuum processing chamber, a microwave guide coupled to the vacuum processing chamber, and fins for dividing a microwave in the electric field direction. The length of fins are different such that the uniformity of the film thickness distribution on the substrate of large area can be improved.

Microwave plasma processing apparatus

The present invention relates to a process for manufacturing an optical recording medium comprising a substrate and a laminate of a recording film and an inorganic dielectric film thereon, and the optical recording medium. The process comprises forming the inorganic dielectric film by using a helicon wave plasma CVD method.

Growing community of inventors

Ichikawa, Japan

Akio Koganei