Fujitsu Corporation

Fujitsu Semiconductor Limited

Meijo University Educational Foundation

Akio Kawabata

Mizuhisa Nihei

Shintaro Sato

Masahiro Horibe

Daiyu Kondo

Yuji Awano

Taisuke Iwai

Shozo Fujita

Shigeya Naritsuka

Takahiro Maruyama

A CNT-metal composite structure is formed by forming a plurality of CNTs which stand side by side from a base substance, forming a sheet-shaped support film which covers upper ends of the CNTs, and filling gaps each present between adjacent ones of the CNTs with a metal. By this structure, highly reliable bonding sheet and heat dissipation mechanism which are very excellent in heat dissipation efficiency, and manufacturing methods of these are realized.

Bonding sheet and manufacturing method thereof, and heat dissipation mechanism and manufacturing method thereof

With TiN being a base material, TiN fine particles are deposited on a silicone substrate by, for example, a laser ablation method so that diameters of the TiN fine particles are about 3 nm, and thereafter, Co fine particles are deposited on the silicon substrate on which the TiN fine particles are deposited, by, for example, the laser ablation method so that sizes of the Co fine particles are equal to or smaller than sizes of the fine particles of the TiN fine particles, here about 1 nm in diameter.

Substrate structure and manufacturing method of the same

A method of manufacturing carbon cylindrical structures, as represented by carbon nanotubes, by growing them on a substrate using a chemical vapor deposition (CVD) method, comprising the steps of implanting metal ions to the substrate surface and then growing the carbon cylindrical structures using the metal ions as a catalyst. A method of manufacturing carbon nanotubes comprising a step of using nano-carbon material as seed material for growing carbon nanotubes is also disclosed. A biopolymer detection device comprising vibration inducing part for inducing vibration, binding part capable of resonating with the vibration induced by the vibration inducing part and capable of binding or interacting with a target biopolymer, and detection part for detecting whether or not the binding part have bound or interacted with the target biopolymer, is also disclosed.

Method of manufacturing carbon cylindrical structures and biopolymer detection device

When growing carbon nanotubes, a substrate is delivered into a thermal CVD chamber whose internal temperature is a room temperature, and a mixed gas of an inert gas and a raw gas is introduced in the inside thereof. After a pressure inside of the chamber is stabilized at 1 kPa, the temperature in the chamber is raised to 510&#xb0; C. in 1 minute. As a result, the carbon nanotubes start to grow linearly from the respective catalytic particles without any fusion of each of the catalytic particles. Subsequently, the temperature and an atmosphere are maintained for about 30 minutes. Once the carbon nanotubes start to grow, surfaces of the catalytic particles are covered by carbon, so that any fusion of each of the catalytic particles can be avoided even during the maintenance for about 30 minutes.

Carbon nanotube growing system

After forming an opening, a resist film is formed on the entire surface and a resist pattern is formed by patterning the resist film. The shape of the resist pattern is such that it covers one side of the bottom of the opening. As a result, a Si substrate is exposed only in one part of the opening. Then, using the resist pattern as a mask, a catalytic layer is formed on the bottom of the opening. Then, the resist pattern is removed. Carbon nanotubes are grown on the catalytic layer. At this time, since the catalytic layer is formed on only one side of the bottom of the opening, the Van der Waals force biased towards that side works horizontally on the growing carbon nanotubes. Therefore, the carbon nanotubes are attracted towards the nearest side of the SiOfilm and grow biased towards that side.

Carbon nanotube device and manufacturing method of the same

Carbon atoms are fed to a catalytic metal particlehaving a atomic arrangement of triangular lattices in a round (or partly round) of a side wall, and a graphen sheethaving a six-membered structure reflecting the atomic arrangement of the triangular lattices is consecutively formed by the metal catalyst, whereby a tubular structure of the carbon atoms is formed. Thus, the chirality of the tubular structure can be controlled by the growth direction of the graphen sheet with respect to the direction of the triangular lattices, and the diameter of the tubular structure can be controlled by the size of the catalytic metal particle.

Method of manufacturing carbon nanotube

An electronic device having a structure of an ohmic connection to a carbon element cylindrical structure body, wherein a metal material is positioned inside the junction part of a carbon element cylindrical structure body joined to a connection objective and the carbon element cylindrical structure body and the connection objective are connected by an ohmic contact. Methods for producing such an electronic device are also disclosed. Further, a method for growing a carbon nanotube is disclosed.

Method for growing carbon nanotubes, and electronic device having structure of ohmic connection to carbon element cylindrical structure body and production method thereof

An aggregate structure of carbon fibers, organized by a plurality of carbon fibers, includes, an aggregate of the carbon fibers aligned in a lengthwise direction, in which a density of the carbon fibers at one side end is different from a density of the carbon fibers at the other side end.

Device structure of carbon fibers and manufacturing method thereof

According to a method of manufacturing carbon nanotubes, minute concavities and convexities are formed at a surface of a substrate, a catalyst metal layer having a predetermined film thickness is formed on the surface having the concavities and convexities, the substrate is subject to a heat treatment at a predetermined temperature to change the catalyst metal layer into a plurality of isolated fine particles. The catalyst metal fine particles have a uniform particle diameter and uniform distribution. Then, the substrate supporting the plurality of fine particles is placed in a carbon-containing gas atmosphere to grow carbon nanotubes on the catalyst metal fine particles by a CVD method using the carbon-containing gas. The carbon nanotubes can be formed to have a desired diameter and a desired shell number with superior reproducibility.

A semiconductor device uses a carbon nanotube structure, which reduces an electric resistance and a thermal resistance by increasing a density of the carbon nanotubes. An insulation film covers a first electrically conductive material. A second electrically conductive material is provided on the insulation film. A plurality of carbon nanotubes extend through the insulation film by being filled in an opening part that exposes the first electrically conductive material. The carbon nanotubes electrically connect the first electrically conductive material and the second electrically conductive material to each other. Ends of the carbon nanotubes are fixed to a recessed part provided on a surface of the first electrically conductive material.

Carbon nanotube structure, a semiconductor device, a semiconductor package and a manufacturing method of a semiconductor device

Method of growing carbon nanotube and carbon nanotube growing system

A method of manufacturing carbon nanotubes that is capable of growing carbon nanotubes on a substrate by a CVD method without giving rise to residual carbon impurities is provided. The method of manufacturing carbon nanotubes according to the present invention is a method in which carbon nanotubes are grown on a substrate by a chemical vapor deposition (CVD) process using a reaction gas containing a compound for the carbon source, wherein a compound having a carbon skeleton and a functional group which is effective for removing carbon impurities that deposit during the growth of carbon nanotubes is used as the compound for the carbon source.

Method of manufacturing carbon nanotubes

A Ti film is pattern-formed on a desired portion on a silicon substrate, and a Co film is formed on the substrate so as to cover the Ti film. CNTs are formed only on a portion, under which the Ti film is formed, of the surface of the Co film at approximately 600&#xb0; C. by a thermal CVD method. The length of the CNT can be controlled by adjusting the thickness of the Ti film.

A method of manufacturing a semiconductor device having an interconnection part formed of multiple carbon nanotubes is disclosed. The method includes the steps of (a) forming a growth mode control layer controlling the growth mode of the carbon nanotubes, (b) forming a catalyst layer on the growth mode control layer, and (c) causing the carbon nanotubes to grow by heating the catalyst layer by thermal CVD so that the carbon nanotubes serve as the interconnection part. The growth mode control layer is formed by sputtering or vacuum deposition in an atmospheric gas, using a metal selected from a group of Ti, Mo, V, Nb, and W. The growth mode is controlled in accordance with a predetermined concentration of oxygen gas of the atmospheric gas.

Growing community of inventors

Kawasaki, Japan

Akio Kawabata