Sanken Electric Co., Ltd.

Honda Motor Co., Ltd.

Akio Iwabuchi

Hironori Aoki

Osamu Machida

Kazuya Aizawa

Shuichi Kaneko

Ryuichi Furukoshi

Mio Suzuki

Makoto Yamamoto

Yoichi Kyono

Toshiaki Ariyoshi

Shohei Osaka

Masaki Kanazawa

Takafumi Tsurumi

Satoru Washiya

Tetsuya Takahashi

Yoshikazu Nomoto

Yasushi Tasaka

Keiichiro Ozawa

Masato Hara

Norimasa Yamada

Hironori Itou

Shigeru Matsumoto

Kazuyoshi Sugita

The operation of a HEMT is monitored on an on-chip basis without increasing the power consumption rate. In a semiconductor device, an electron supply layeris formed on a channel layer. A two-dimensional electron gas (2DEG) layeris formed at the side of the channel layer of the hetero-junction interface. Electrons flow through the 2DEG layerbetween a source electrodeformed on the surface of the electron supply layerand a drain electrodethat is formed on the same surface. A potential detection electrodeis arranged on the electron supply layerbetween the gate electrodeand the source electrode. A resistorhaving a sufficiently high resistance value makes the electric current flowing to the potential detection electrodenegligible relative to the drain current in operation.

Semiconductor device, electric circuit using the same and method of controlling electric circuit

A semiconductor device protects against concentration of electric current at a front end portion of one of the electrodes thereof. The semiconductor device includes a substrate, a compound semiconductor layer formed on the substrate and having a channel layer based on a hetero junction, a first main electrode formed on the compound semiconductor layer, a second main electrode formed on the compound semiconductor surrounding the first main electrode and having a linear region and an arc-shaped region, a control electrode formed on the compound semiconductor layer and disposed opposite to the first main electrode and the second main electrode, an electric current being made to flow between the first main electrode and the second main electrode, and an electric current limiting section formed between the first main electrode and the arc-shaped region of the second main electrode.

Semiconductor device

A semiconductor device is free from degradation of characteristics attributable to a manufacturing process thereof and its characteristics are hardly affected by changes in electric potentials of bonding pads. The semiconductor deviceincludes an active region, a first insulating layercovering the active region, a floating conductorformed on the first insulating layer, a second insulating layerformed on the first insulating layerand the floating conductor, a bonding padformed on the second insulating layerand interconnection viasfor electrically connecting the active regionand the bonding pad

A drive circuit drives a normally-on high-side switch Qand a normally-off low-side switch Qthat form a series circuit connected in parallel with a DC power source. The drive circuit includes a controllerthat outputs a control signal to turn on/off the high- and low-side switches, a rectifier Dhaving a first end connected to a connection point of the high- and low-side switches, a capacitor Cthat is connected to a second end of the rectifier and a first end of the DC power source and serves as a power source for the controller, and a driver (A, AND, Q, Q) that turns on/off the high- and low-side switches according to the control signal from the controller and a voltage from the capacitor.

Drive circuit

A semiconductor device includes: a first semiconductor layer; a second semiconductor layer; a two-dimensional carrier gas layer; a source electrode; a drain electrode; a gate electrode; and an auxiliary electrode located above the two-dimensional carrier gas layer between the gate electrode and the drain electrode. Channel resistance of the two-dimensional carrier gas layer between the gate electrode and the auxiliary electrode is set higher than channel resistance of the two-dimensional carrier gas layer between the gate electrode and the source electrode.

A method of manufacturing a semiconductor device includes preparing a semiconductor wafer including a silicon substrate and a laminate having a compound semiconductor layer; etching and removing a part of the laminate in a thickness direction to form trench regions in a grid, each trench region including a plurality of stripe grooves extending in parallel to each other; filling the groove with a material having a lower hardness than the compound semiconductor layer to form a buried region; and dividing the semiconductor wafer into a plurality of chips by dicing using a blade at a dicing line which is defined within the trench region and includes a plurality of the buried regions.

Semiconductor wafer and manufacturing method of semiconductor device

A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a two-dimensional carrier gas layer, a first main electrode, a second main electrode, a first gate electrode, and a second gate electrode. The first gate electrode is provided between a part of the first main electrode and a part of the second main electrode opposite to the part of the first main electrode. The second gate electrode is provided between another part of the first main electrode and another part of the second main electrode opposite to the another part of the first main electrode with a separation region interposed between the first gate electrode and the second gate electrode. The second gate electrode is controlled independently of the first gate electrode.

High electron mobility transistor having a high speed switching function

A manufacturing method of a semiconductor deviceincludes forming a plurality of second conductive second semiconductor regions at specific intervals on one main surface of a first conductive first semiconductor region, the plurality of second conductive second semiconductor regions being opposite to the first conductive first semiconductor region, forming a plurality of the first conductive third semiconductor regions on a main surface of the second semiconductor region, the plurality of the first conductive third regions being separated from each other, forming a plurality of holes at specific intervals on an another main surface which faces the one main surface of the first semiconductor region, the plurality of holes being separated from each other, forming a pair of adjacent second conductive fourth semiconductor regions which are alternately connected at a bottom part of the hole within the first semiconductor region, and burying an electrode within the hole.

Semiconductor device and manufacturing method thereof

An aspect of the present invention inheres in a semiconductor device includes a semiconductor region, a source electrode and a drain electrode, which are provided on a main surface of the semiconductor region, a gate electrode exhibiting normally-off characteristics, the gate electrode being provided above the main surface of the semiconductor region while interposing a p-type material film therebetween, and being arranged between the source electrode and the drain electrode, and a fourth electrode that is provided on the main surface of the semiconductor region, and is arranged between the gate electrode and the drain electrode.

A semiconductor device having a transistor and a rectifier includes: a current path; a first main electrode having a rectifying function and arranged on one end of the current path; a second main electrode arranged on the other end of the current path; an auxiliary electrode arranged in a region of the current path between the first main electrode and the second main electrode; a third main electrode arranged on the one end of the current path apart from the first main electrode along a direction intersecting the current path; and a control electrode arranged in a region of the current path between the second main electrode and the third main electrode. The transistor includes the current path, the second main electrode, the third main electrode, and the control electrode. The rectifier includes the current path, the first main electrode, the second main electrode, and the auxiliary electrode.

Semiconductor device having transistor and rectifier

A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate.

Monolithic integrated circuit

A capacitive load driver includes a first switching element whose first end receives positive potential, an EL element arranged between a second end of the first switching element and the ground, a charge collecting capacitor whose first end is connected to a positive electrode terminal of the EL element, a voltage source connected between a second end of the charge collecting capacitor and the ground, and a controller. The controller charges a parasitic capacitance of the EL element and the charge collecting capacitor, and thereafter, applies negative potential from the voltage source to the second end of the charge collecting capacitor. Thereafter, the controller brings the output voltage of the voltage source to ground potential so that the charge collecting capacitor is discharged to charge the EL element. The capacitance of the charge collecting capacitor is set to be sufficiently greater than that of the parasitic capacitance.

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Niiza, Japan

Akio Iwabuchi