Fuji Photo Film Company, Limited

Akio Higashi

Kazuhiro Kawaziri

Haruji Shinada

Hiroshi Tamura

Kazuhiro Kawajiri

Mitsuo Saitou

Masatoshi Tabei

Keiji Takeda

Yuzo Mizobuchi

Yoshihiro Ono

Kazuhiro Kawashiri

Mitsuru Ikeda

Jin Murayama

Masayoshi Nagata

Isamu Hatanaka

Yosuke Nakajima

Mitsuharu Nirasawa

Masato Fujiwara

A solid-state imaging device comprising an MOS scanning circuit over which is formed an array of photoconductive imaging elements. The imaging elements are separated by doped regions which create potential barriers against the movement of carriers of the photoconductive regions.

Solid-state imaging device with potential barriers between pixels

A solid-state imaging device in which the possibility of defect formation in a photoconductive layer is substantially eliminated by the use of a multi-layered structure. A photoconductive film unit and a transparent electrode are formed in that order on a semiconductor substrate in which is formed a scanning circuit composed of a plurality of picture elements defined by respective electrodes on the semiconductor substrate and the transparent electrode. The photoconductive film unit is composed of a polycrystalline silicon film and an amorphous silicon film that are disposed in that order on the semiconductor substrate.

Solid-state imaging device with polycrystalline film

A solid-state imaging device having a scanning circuit and a photoconductive film formed in layers on a semiconductor substrate, and a process for forming the same, wherein high resolution with substantially no color mixing is attained. An electrode layer is formed over the semiconductor substrate for providing the plural electrodes, and a photoconductive film is formed over the electrode layer. A first transparent electrode is produced over the photoconductive film, after which a resist pattern is formed on the first transparent electrode layer corresponding to the pixels. The first transparent layer and the photoconductive film are etched according to the resist pattern to spatially isolate adjacent pixels in the first transparent layer and the photoconductive film. Adjacent pixels are isolated by etching, using the resist pattern, that part of the electrode layer on which are disposed the first transparent electrode layer and the photoconductive film between isolated pixels.

Process for fabricating solid-state imaging device

Solid state imaging device and process for fabricating the same

A process for producing an amorphous semiconductor membrane. A predetermined gas is introduced into a vacuum chamber which is decomposed by a discharge phenomenon. The discharge phenomenon is caused by an electric field made up of a high frequency electric field or pulsed electric field superposed on a DC electric field.

Apparatus and process for production of amorphous semiconductor

An electrophotographic light-sensitive element and process for the production thereof are described, wherein the element comprises an electrically conductive support coated with a photoconductive layer composed of a silicon- and carbon-based amorphous material doped with hydrogen and fluorine.

Electrophotographic element with alpha -Si and C material doped with H

A noncrystalline silicon powder having excellent photoconductivity is described, comprising silicon and hydrogen, exhibiting an infrared absorption spectrum characterized by absorption peaks centered at about 2000 cm.sup.-1 and 630 cm.sup.-1, wherein the height of the absorbance peak at 2000 cm.sup.-1 is at least one-tenth the height of the peak centered at 630 cm.sup.-1, and exhibiting a spin density of not more than 10.sup.18 cm.sup.-3 determined by electron spin resonance spectroscopy; the noncrystalline silicon powder is used as highly efficient photoconductor in photoconductive compositions utilized for the production of electrophotographic photoreceptors.

Method of making .alpha.-silicon powder, and electrophotographic

A function separated type electrophotographic light-sensitive member and a process for production thereof are described, said member comprising an electrically conductive support, a light-sensitive layer made of a hydrogen-doped amorphous silicon semiconductor, and an organic electric charge transport layer containing at least one positive charge transport carrier selected from the group consisting of pyrazolines, aryl-alkanes, arylketones, arylamines and chalcones.

Function separated type electrophotographic light-sensitive members and

In the course of producing a thin film of amorphous silicon by high frequency sputtering elemental silicon under an atmosphere containing at least hydrogen gas, the temperature of the base plate onto which the amorphous silicon is deposited is maintained at a temperature of about 50.degree. C. to 150.degree. C. The thus obtained silicon film possesses not only photoconductivity sufficient for use as a photoconductor but also a large difference between photoconductivity and dard conductivity. In addition, a photoconductor of an amorphous silicon thin film can be produced at low cost without environmental pollution problems.

High frequency sputtering produces thin film amorphous silicon

An image is recorded on the recording layer of an image recording material by exposing the photoconductor thereof to imagewise light and applying a voltage there-across. The image recording material is composed of

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Asaka, Japan

Akio Higashi