Hitachi, Ltd.

Other

Hitachi Process Computer Engineering, Inc.

Akio Hayasaka

Hideo Sato

Shinichi Komura

Tetsuya Nagata

Akira Arimoto

Yoshiharu Nagae

Yuji Mori

Minoru Hoshino

Ichirou Katsuyama

Hiroyuki Kondo

Michio Suzuki

Katsumi Ogiue

Keijiro Uehara

Kazuo Itoh

Hisayuki Higuchi

Ichiro Imaizumi

Tadao Kaji

Atsuo Hotta

Hideo Noda

A liquid crystal light valve includes a semiconductor substrate having a region for a plurality of switching elements formed in a matrix form. A first metal layer is formed on the surface of the semiconductor substrate through an insulating layer and divided into a plurality of parts by first slits. A second metal layer is formed on the first metal layer through another insulating layer and divided into a plurality of parts by second slits. A third metal layer is formed on the second metal layer through still another insulating layer and divided into a plurality of parts by third slits. An opposite substrate has an opposite electrode on a surface thereof, disposed so as to be opposite to said third metal layer through an interval on the opposite electrode side. Liquid crystal fills the interval between said opposite electrode and the third metal layer.

LCD and projection type display using same

A liquid crystal light valve includes a semiconductor substrate having a region for a plurality of switching elements formed in a matrix form. A first metal layer is formed on the surface of the semi-conductor substrate through an insulating layer and divided into a plurality of parts by first slits. A second metal layer is formed on the first metal layer through another insulating layer and divided into a plurality of parts by second slits. A third metal layer is formed on the second metal layer through still another insulating layer and divided into a plurality of parts by third slits. An opposite substrate has an opposite electrode on a surface thereof, disposed so as to be opposite to said third metal layer through an interval on the opposite electrode side. Liquid crystal fills the interval between said opposite electrode and the third metal layer.

Liquid crystal light valve and projection type display using same

LCD and projection type display using three metalization layers and black layer

Light insensitive type active matrix with P and N regions connected to a

Liquid crystal substrate having 3 metal layers with slits offset to

After an end part of a polycrystalline silicon film has been oxidized from an exposed side surface thereof, a silicon dioxide film formed is removed, and an opening thus provided is used for diffusing an impurity into a semiconductor substrate so as to form a graft base region. This measure is effective for fabricating a semiconductor device of small required area at high precision.

Method of forming bipolar transistors with graft base regions

An I.sup.2 L device is disclosed wherein the P type injector region of a PNP transistor is formed so as to be buried in an N.sup.- type epitaxial layer below the P type collector region of the PNP transistor, whereby the carrier injection efficiency of the transistor is improved and a high switching speed is obtained. The I.sup.2 L device further includes an inversed NPN transistor wherein the abovementioned P type collector region of the PNP transistor works as a base region of the NPN transistor, an N type collector region is formed in the P type base region, and the abovementioned P type injector region extends between the N.sup.- type epitaxial layer and an N.sup.+ type substrate except below the N type collector region so that the effective emitter portion of the NPN transistor is limited to a specific area immediately below the N type collector region, thereby to reduce the power consumption.

Semiconductor integrated circuit device and method of producing same

Method of manufacturing a semiconductor device

An improved method of manufacturing a semiconductor device employs a local oxidation process in which an oxide isolation region is formed by locally oxidizing a silicon epitaxial layer, using a nitride-oxide double layer for masking purposes, with a P.sup.+ type region being formed by the diffusion of an impurity into the silicon epitaxial layer using the oxide isolation region, which has an 'oxide beak', as a diffusion mask. An additional region of the same conductivity type as the P.sup.+ type diffused region is provided to be contiguous to the P.sup.+ type diffused region, so that a PN junction terminates at a silicon surface remote from the electrode to be connected to the P.sup.+ diffused region. As a result, disadvantages caused by the oxide beak, such as the imperfect protection of the PN junction and short-circuiting between the electrode and the epitaxial layer through pin holes in the oxide beak can be eliminated.

Method of manufacturing semiconductor devices with local oxidation of

A lateral transistor or the like is made by the steps of forming a first insulating layer on a semiconductor substrate and providing a first hole in this insulating layer so as to expose a first surface portion of the substrate. An impurity of a first conductivity type is introduced through the hole and a second hole is formed in the insulating layer so as to expose a second surface portion of the substrate spaced apart from the first portion. Then, a second insulating layer of a material different from that of the first layer is formed on the first insulating layer and on the first and second surface portions of the substrate. Subsequently, third and fourth holes are formed in the second insulating layer within the confines of these holes to expose at least portions of the first and second surface portions of the substrate. Then, an impurity of a second conductivity type is introduced into the exposed first and second surface portions of the substrate through the third and fourth holes.

Method of fabricating semiconductor device using at least two sorts of

A method of manufacturing bipolar transistor elements in a semiconductor integrated circuit isolated by a silicon oxide film, comprises the steps of forming a semiconductor layer of one conductivity type on a semiconductor substrate of the opposite conductivity type, in which each collector region of the one conductivity type is formed, diffusing an impurity of the opposite conductivity type for each base region into the surface of the semiconductor layer of the one conductivity type, performing oxidation down to the surface of the semiconductor substrate by employing an oxidation-resisting film as a mask, to thereby form an isolating silicon oxide film, and diffusing an impurity of the one conductivity type for each emitter region into a selected part of the surface of the diffused semiconductor layer of the opposite conductivity type, whereby the base width of the bipolar transistor elements can be narrowed.

Method of manufacturing semiconductor device

Growing community of inventors

Higashiyamato, Japan

Akio Hayasaka