Screen Holdings Co., Ltd.

Dainippon Screen Mfg. Co., Ltd.

Akio Hashizume

Yuya Akanishi

Takashi Ota

Hiroaki Sugimoto

Masanobu Sato

Takahiro Yamaguchi

Hiroki Tsujikawa

Kenji Kawaguchi

Kazuo Nakajima

Manabu Yamamoto

Taiki Hinode

Junichi Ishii

Seiichiro Okuda

Takayuki Nishida

Wataru Yano

A substrate processing device according to the present invention is a substrate processing device that performs substrate processing with a processing solution and includes inspection means for inspecting degradation of components constituting the substrate processing device. The inspection means includes: capturing means for acquiring image data of the components; color information acquisition means for acquiring color information of an inspection target component from the image data acquired by the capturing means; and degradation determination means for determining a degradation degree of the inspection target component based on the acquired color information.

Substrate processing device and component inspection method for substrate processing device

According to the present invention, after supplying a rinse liquid containing water to a substrate that is held horizontally, an IPA-containing liquid which contains isopropyl alcohol is supplied to the substrate to which the rinse liquid adhering. Subsequently, an IPA-containing liquid low in moisture concentration is supplied to the substrate. The IPA-containing liquid which has been supplied to the substrate is recovered and supplied to the substrate again.

Substrate processing apparatus and substrate processing method

It is an object to prevent adhesion of a processing liquid to a non-processing region of a substrate. In order to achieve the object, a substrate processing apparatus includes a substrate rotating mechanism, a discharging portion for discharging a processing liquid to a substrate, a moving portion for moving a discharging portion, and a controller. The discharging portion starts to discharge the processing liquid at a first position and is moved to a second position. The first position is a position of the discharging portion where a section of a passage of the discharging portion is projected onto a first region, and the second position is a position of the discharging portion where the section of the passage is projected onto a second region. The first region is a region on the peripheral edge side of the substrate from the second region.

A substrate treatment apparatus includes a brush moving mechanism which moves a shaft to which a cleaning brush is attached. The brush body includes a substrate contact portion of a pillar-shaped portion. The substrate treatment apparatus further includes a correcting member and a relatively-positioning mechanism. When the correcting member is placed in a target position, a contact portion of the correcting member overlaps an object portion which is a combination of a design contact portion and a belt-shaped annular portion in an outer surface of a design pillar-shaped portion of a design body of a design brush. The contact portion is formed to have an inverted shape of the object portion of the design brush, and a portion of the contact portion, which corresponds to the belt-shaped annular portion, is a center-axis facing surface which faces a center axis of the shaft.

Substrate treatment apparatus

A substrate processing apparatus includes a rotating unit rotating a substrate around a predetermined first rotational axis passing through a central portion of a major surface of the substrate, a nozzle provided to be circumrotatable around a predetermined second rotational axis, discharging a processing fluid toward the major surface of the substrate, and having a plurality of discharge ports disposed at positions separated from the second rotational axis, a processing fluid supplying unit supplying the processing fluid to the plurality of discharge ports, and a nozzle moving unit moving the nozzle between a central portion processing position and a peripheral edge portion.

Substrate treatment device and substrate treatment method

In a substrate processing method, a substrate holding unit holds a substrate in a horizontal position, a processing liquid supplying unit supplies first and second processing liquids to the surface of the substrate held by the substrate holding unit, a substrate rotating unit rotates the substrate held by the substrate holding unit, a heater opposes the substrate held by the substrate holding unit, and a moving unit moves at least one of the substrate holding unit and the heater supporting member such that the heater and the substrate are held in two different relative positions.

Substrate processing device

A substrate treatment apparatus is provided, which includes: a seal chamber including a chamber body having an opening, a lid member provided rotatably with respect to the chamber body and configured to close the opening, and a first liquid seal structure which liquid-seals between the lid member and the chamber body, the seal chamber having an internal space sealed from outside; a lid member rotating unit which rotates the lid member; a substrate holding/rotating unit which holds and rotates a substrate in the internal space of the seal chamber; and a treatment liquid supplying unit which supplies a treatment liquid to the substrate rotated by the substrate holding/rotating unit.

The inventive substrate treatment apparatus includes a spin chuck which horizontally holds and rotates a wafer; a heater which is disposed in opposed relation to a lower surface of the wafer held by the spin chuck and heats the wafer from a lower side; a phosphoric acid nozzle which spouts a phosphoric acid aqueous solution to a front surface (upper surface) of the wafer held by the spin chuck; and a suspension liquid nozzle which spouts a silicon suspension liquid to the front surface of the wafer held by the spin chuck. The wafer is maintained at a higher temperature on the order of 300&#xb0; C. and, in this state, a liquid mixture of the phosphoric acid aqueous solution and the silicon suspension liquid is supplied to the front surface of the wafer.

Substrate treatment method and substrate treatment apparatus

In a substrate processing apparatus (), a silicon oxide film on a main surface of a substrate () is removed in an oxide film removing part () and then a silylation material is applied to the main surface, to thereby perform a silylation process in a silylation part (). It is thereby possible to lengthen the Q time from the removal of the silicon oxide film to the formation of the silicon germanium film and reduce the temperature for prebaking in the formation of the silicon germanium film.

Substrate processing method

A substrate processing method includes a water removing step of removing water from a substrate, a silylating step of supplying a silylating agent to the substrate after the water removing step, and an etching step of supplying an etching agent to the substrate after the silylating step. The substrate may have a surface on which a nitride film and an oxide film are exposed and in this case, the etching step may be a selective etching step of selectively etching the nitride film by the etching agent. The etching agent may be supplied in a form of a vapor having an etching component.

Substrate processing method and substrate processing apparatus

An inventive substrate treatment method includes a silylation step of supplying a silylation agent to a substrate, and an etching step of supplying an etching agent to the substrate after the silylation step. The method may further include a repeating step of repeating a sequence cycle including the silylation step and the etching step a plurality of times. The cycle may further include a rinsing step of supplying a rinse liquid to the substrate after the etching step. The cycle may further include a UV irradiation step of irradiating the substrate with ultraviolet radiation after the etching step. The method may further include a pre-silylation or post-silylation UV irradiation step of irradiating the substrate with the ultraviolet radiation before or after the silylation step.

A solvent vapor containing a solvent material capable of dissolving hydrogen fluoride is supplied to a surface of a substrate, thereby covering the surface of the substrate with a liquid film containing solvent material. Thereafter an etching vapor containing a hydrogen fluoride is supplied to the surface of the substrate covered by the liquid film containing the solvent material, thereby etching the surface of the substrate.

A preprocess step for supplying an inert gas into an enclosed space in which a substrate is disposed, while exhausting gas by sucking out of the enclosed space. And then, an etching step for supplying a process vapor into the enclosed space while exhausting gas out of the enclosed space at an rate lower than a rate in the preprocess step. And then a post-process step for supplying an inert gas into the enclosed space while exhausting gas by sucking out of the enclosed space at a rate higher than the rate in the etching step.

Substrate treatment apparatus and substrate treatment method

According to the substrate processing method of the invention, a jet of droplets generated from a gas and a heated processing liquid is supplied to the surface of a substrate. A resist stripping liquid to strip off the resist from the surface of the substrate is then supplied to the surface of the substrate.

Growing community of inventors

Kyoto, Japan

Akio Hashizume