Alps Electric Co., Ltd.

Tdk Corporation

Delta Electronics (japan), Inc.

Akio Hanada

Naoya Hasegawa

Masamichi Saito

Yosuke Ide

Ryo Nakabayashi

Kazumasa Nishimura

Yoshihiro Nishiyama

Hidekazu Kobayashi

Kenichi Tanaka

Eiji Umetsu

Munemitsu Abe

Kazuaki Ikarashi

Shokan Yamashita

Kota Asatsuma

Tatsuya Oba

Hasahiko Ishizone

Yoshihiro Nishiyana

Hidekezu Kobayashi

Norimasa Okanishi

In a magnetic core including a core assembly formed of multiple arranged thin strip blocks, each of the thin strip blocks has a structure that multiple nanocrystalline thin strips having a bcc-Fe phase as a main phase are laminated one above another, and an iron loss in the nanocrystalline thin strip positioned at a center of the thin strip block in a thickness direction thereof is lower than an iron loss in the nanocrystalline thin strip positioned in a surface layer of the thin strip block. The nanocrystalline thin strip may be a heat-treated product of an amorphous thin strip made of an amorphous alloy material, and the thin strip block may include a fixedly joined portion in which the nanocrystalline thin strips adjacent to each other in a lamination direction are fixedly joined together.

Magnetic core and magnetic component

A tunneling magnetic sensing element includes a laminate in which a pinned magnetic layer having a magnetization direction pinned, an insulating barrier layer, and a free magnetic layer having a magnetization direction variable with an external magnetic field are laminated in order from below. The insulating barrier layer is made of Mg&#x2014;O. The free magnetic layer has a soft magnetic layer and an enhanced layer disposed between the soft magnetic layer and the insulating barrier layer to have a spin polarization ratio higher than the soft magnetic layer. An insertion magnetic layer made of one selected from Co&#x2014;Fe&#x2014;B, Co&#x2014;B, Fe&#x2014;B, and Co&#x2014;Fe is inserted into the soft magnetic layer in a direction parallel to the interface of each layer constituting the laminate, and the soft magnetic layer is divided into multiple layers in a thickness direction through the insertion magnetic layer.

Tunneling magnetic sensing element with insertion magnetic layer inspired into soft magnetic layer

A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti&#x2014;Mg&#x2014;O or Ti&#x2014;O. The free magnetic layer includes an enhancement sublayer, a first soft magnetic sublayer, a nonmagnetic metal sublayer, and a second soft magnetic sublayer. For example, the enhancement sublayer is composed of Co&#x2014;Fe, the first soft magnetic sublayer and the second soft magnetic sublayer are composed of Ni&#x2014;Fe, and the nonmagnetic metal sublayer is composed of Ta. The total thickness of the average thickness of the enhancement sublayer and the average thickness of the first soft magnetic sublayer is in the range of 25 to 80 angstroms. Accordingly, the tunneling magnetoresistive element can consistently have a higher rate of resistance change than before.

Tunneling magnetoresistive element including multilayer free magnetic layer having inserted nonmagnetic metal sublayer

An underlying layer is composed of Co&#x2014;Fe&#x2014;B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (&#x394; R/R) or the like, thereby achieving a structure suitable for increasing recording density.

Magnetic sensing element and method for manufacturing the same

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Niigata-ken, Japan

Akio Hanada