Nichia Corporation

Akinori Yoneda

Yoshiyuki Aihara

Shinji Nakamura

Hirofumi Kawaguchi

Akiyoshi Kinouchi

Hirokazu Sasa

Hisashi Kasai

Kazuki Kashimoto

Yasunobu Sugimoto

Kouichiroh Deguchi

Masafumi Itasaka

Atsuo Michiue

Hiroaki Yuto

Shinya Sonobe

Masanao Ochiai

Kazuyuki Akaishi

Yuji Matsuyama

Shinji Suzuki

Kousuke Ise

Naoto Morizumi

Hiroshi Doi

A wavelength-converting member includes a wavelength-converting layer, a heat-dissipating component, and a securing member. The wavelength-converting layer has an upper surface, a lower surface, and one or more lateral surfaces with each of the one or more lateral surfaces of the wavelength-converting layer defining an inclined surface inclined at an acute angle with respect to the lower surface of the wavelength-converting layer. The wavelength-converting layer includes a thermally conductive part, and a fluorescent material containing part in contact with the thermally conductive part. The wavelength-converting layer is mounted on the heat-dissipating component. The securing member is secured to the heat-dissipating component. The securing member presses the inclined surface of each of the one or more lateral surfaces such that the wavelength-converting layer is secured to the heat-dissipating component.

Wavelength-converting member and light emitting device

A manufacturing method of a flip-chip nitride semiconductor light emitting element includes a step of providing a nitride semiconductor light emitting element structure; a protective layer forming step; a first resist pattern forming step; a protective layer etching step; a first metal layer forming step; a first resist pattern removing step; a third metal layer forming step; a second resist pattern forming step; a second metal layer forming step; a second resist pattern removing step; and a third metal layer removing step.

Method of making layered structure with metal layers using resist patterns and electrolytic plating

The method includes the steps of: preparing a single crystal SiC including an upper surfaceand a lower surfaceand provided with a micropipepenetrating from the upper surfaceto the lower surface; forming a first seed layermade of a metal material on the upper surfaceof the single crystal SiC; and forming a first plated layeron the first seed layerso as to close an upper end of the micropipe, using an electroplating method.

Submount and semiconductor laser device

A side-view type light emitting device has a bottom surface thereof as a light emission surface and a first lateral surface thereof as a mounting surface for mounting on a mounting substrate, and includes a semiconductor layered structure including a first semiconductor layer, an active layer and a second semiconductor layer; a first connecting electrode exposed from the first lateral surface and electrically connected to the first semiconductor layer; a first electrode disposed between the first semiconductor layer and the first connecting electrode; a second connecting electrode exposed from the first lateral surface; a metal wire electrically connecting an upper surface of the second semiconductor layer to the second connecting electrode; and a resin layer. In a direction perpendicular to the light emission surface, the active layer does not overlap with the first connecting electrode, and the active layer does not overlap with the second connecting electrode.

Light emitting device

A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.

Semiconductor light emitting element and method of manufacturing the same

A method of manufacturing one or more light emitting devices includes: forming one or more emitting elements, each including a first conductive type semiconductor layer, a second conductive type semiconductor layer, a first electrode, and a second electrode, on a growth substrate; forming a first metal layer electrically connected to each first electrode, and a second metal layer electrically connected to each second electrode; forming a first resin layer covering the one or more light emitting elements so as to expose an upper surface of each first metal layer and an upper surface of each second metal layer; connecting a first wire to the upper surface of each first metal layer, and connecting a second wire to the upper surface of each second metal layer; and forming a second resin layer on the first resin layer so as to expose an end portion of each first wire and second wire.

Method of manufacturing light emitting device with exposed wire end portions

A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.

A light emitting device includes a base member, a laser element, a retaining member, a fluorescent member, and first and second fixing members. The retaining member has a first surface on a laser element side and a second surface not on the laser element side. The fluorescent member is fixed to a through hole of the retaining member. The first and second fixing members clamp the retaining member. The first and second fixing members have first and second contact surfaces in contact with the first and second surfaces of the retaining member, respectively. A distance between the first and second contact surfaces becomes smaller as the first and second contact surfaces become farther from the through hole. The retaining member, the first and second fixing members are arranged such that a space surrounded by the retaining member, and the first and second fixing members exists around the retaining member.

A light emitting element for flip-chip mounting having a flat mounting surface which allows a decrease in the width of the streets of a wafer. In the light emitting element, the insulating member filling around the bumps and flattening the upper surface is formed with a margin of a region with a width which is equal to or larger than the width of the streets on the dividing lines, so that at the time of dividing the wafer along the dividing lines, the insulating member is not processed, which allows designing of the streets with a small width.

Light emitting element having protective layer

Submount and manufacturing method thereof and semiconductor laser device and manufacturing method thereof

A light emitting device is constituted with a semiconductor light emitting element on which a support member is disposed on one surface provided with a p-side electrode and an n-side electrode and a fluorescent material layer is disposed on the other surface which is an opposite side of the one surface. The support member includes a resin layer, an electrode for p-side external connection and an electrode for n-side external connection disposed exposed at a surface opposite side of a surface where the resin layer is in touch with a light emitting element, and internal wirings disposed in the resin layer and electrically connecting between a p-side electrode and the electrode for p-side external connection respectively. The internal wirings include a metal wire and a metal plated layer, and a metal wire and a metal plated layer respectively connected in series.

A manufacturing method of a light emitting device includes preparing a wafer that is provided by arranging a plurality of semiconductor light emitting elements including semiconductor stacks and electrodes provided on first surfaces of the semiconductor stacks. A metal wire is wired in an arc shape between the electrodes of the plurality of semiconductor light emitting elements that are arranged in one direction on the wafer so as to connect each of the electrodes and the metal wire. A resin layer is provided on a side of the first surfaces of the semiconductor stacks in such a way that the metal wire is accommodated inside the resin layer. The wafer is cut along a boundary line to segment the plurality of semiconductor light emitting elements so as to singulate the plurality of semiconductor light emitting elements.

Manufacturing method of light emitting device

A method of manufacturing a light emitting device includes providing a wafer having a substrate and a plurality of semiconductor stacked-layer bodies stacked on the substrate, an upper surface of the substrate being exposed at an outer peripheral region of each of the plurality of semiconductor stack bodies in a plan view, forming a separation layer integrally covering the upper surface of the substrate and an upper surface of the semiconductor stacked-layer body, the separation layer including a separation boundary, forming a support member on the separation layer, removing the substrate, forming a wavelength conversion layer on a side of the semiconductor stack body and the separation layer where the substrate is removed, the wavelength conversion layer made of a resin containing a wavelength conversion member, and removing the wavelength conversion layer located in the outer peripheral region by separating the separation layer at the separation boundary.

Method of manufacturing light emitting device

A method of manufacturing a light emitting device includes preparing wafer with a plurality of light emitting elements arrayed on a growth substrate, on a first side of a semiconductor stacked layer body, forming a resin layer which includes metal wires respectively connected to a p-side electrode and an n-side electrode, forming a groove by removing at least portion of the resin layer from an upper surface side in a boundary region between the light emitting elements and exposing end surfaces of metal wires which are internal conductive members on an inner side surface defining a groove, forming electrodes for external connection respectively connecting to exposed end surfaces of metal wires, and singulating the wafer into a plurality of singulated light emitting elements.

Growing community of inventors

Anan, Japan

Akinori Yoneda