Tokyo University of Agriculture and Technology

Sumitomo Electric Industries, Limited

Tamura Corporation

Tokuyama Corporation

Tokyo Electron Limited

Mitsubishi Chemical Corporation

National Institute of Information and Communications Technology, Incorporated

Taiyo Nippon Sanso Corporation

Rohm Co., Ltd.

Osaka University

Soraa, Inc.

Hexatech, Inc.

Tokyo Corporation

Itochu Plastics Inc.

University of Agriculture and Technology

Akinori Koukitu

Yoshinao Kumagai

Hisashi Murakami

Yoshiki Miura

Hisashi Seki

Masato Matsushima

Ken Goto

Kikurou Takemoto

Kensaku Motoki

Hideki Matsubara

Toru Nagashima

Mitsuru Shimazu

Kohei Sasaki

Fumitaka Sato

Katsushi Akita

Takuji Okahisa

Kazuya Takada

Hiroyuki Yanagi

Masataka Higashiwaki

Kenji Iso

Michael Ragan Krames

Mark Philip D'Evelyn

Seiji Nakahata

Akira Yamaguchi

Masashi Yoshimura

Yusuke Mori

Jinqiao Xie

Toru Kinoshita

Song Yun Kang

Mamoru Imade

Rafael F Dalmau

Raoul Schlesser

Zlatko Sitar

Naoki Yoshii

Baxter F Moody

Tetsuo Fujii

Masashi Isemura

Kazushige Shiina

Shigenori Takagishi

Keiichiro Fujita

Man Hoi Wong

Tomohiro Marui

Hayato Shimamura

Yuki Kubota

Yuki Hiraren

As one embodiment, the present invention provides a method for growing a β-GaO-based single crystal film by using HYPE method. The method includes a step of exposing a GaO-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a β-GaO-based single crystal film on a principal surface of the GaO-based substrate at a growth temperature of not lower than 900° C.

Method for growing beta-GaO-based single crystal film, and crystalline layered structure

This disclosure provides a vapor-liquid reaction device including a vapor-liquid reaction chamber and a projecting member. The vapor-liquid reaction chamber holds a molten metal in a lower portion of an internal space of the vapor-liquid reaction chamber.

Vapor-liquid reaction device, reaction tube, film forming apparatus

A method for producing a GaN crystal that includes: (i) a seed crystal preparation step of preparing a GaN seed crystal having one or more facets selected from a {10-10} facet and a {10-1-1} facet; and (ii) a growth step of growing GaN from vapor phase on a surface comprising the one or more facets of the GaN seed crystal using GaCland NHas raw materials.

Method for producing GaN crystal

[Problem] To provide a crystal laminate structure having a &#x3b2;-GaObased single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structurewhich includes: a GaObased substrate; and a &#x3b2;-GaObased single crystal filmformed by epitaxial crystal growth on a primary faceof the GaObased substrateand including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1&#xd7;10to 5.0&#xd7;10atoms/cm.

Crystal laminate structure

The present invention provides a novel method for producing a GaN crystal, the method including growing GaN from vapor phase on a semi-polar or non-polar GaN surface using GaCland NHas raw materials. Provided herein is an invention of a method for producing a GaN crystal, including the steps of: (i) preparing a GaN seed crystal having a non-polar or semi-polar surface whose normal direction forms an angle of 85&#xb0; or more and less than 170&#xb0; with a [0001] direction of the GaN seed crystal; and (ii) growing GaN from vapor phase on a surface including the non-polar or semi-polar surface of the GaN seed crystal using GaCland NHas raw materials.

A semiconductor element includes a high-resistivity substrate that includes a &#x3b2;-GaO-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a &#x3b2;-GaO-based single crystal, and a channel layer on the buffer layer, the channel layer including a &#x3b2;-GaO-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a &#x3b2;-GaO-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a &#x3b2;-GaO-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a &#x3b2;-GaO-based single crystal including a donor impurity.

Semiconductor element and crystalline laminate structure

A semiconductor substrate for being used as a base substrate for epitaxial crystal growth by HVPE method includes a &#x3b2;-GaO-based single crystal, and a principal surface that is a plane parallel to a [010] axis of the &#x3b2;-GaO-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer that includes a &#x3b2;-GaO-based single crystal and is formed on the principal surface of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for manufacturing the epitaxial wafer includes forming the epitaxial layer by epitaxial crystal growth using the HVPE method on the semiconductor substrate.

Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer

A crystal laminate structure includes a GaO-based substrate, and a &#x3b2;-GaO-based single crystal film formed by epitaxial crystal growth on a principal surface of the GaO-based substrate. The &#x3b2;-GaO-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 1&#xd7;10atoms/cmand not more than 5.0&#xd7;10atoms/cm.

A high withstand voltage Schottky barrier diode includes a first layer that includes a first GaO-based single crystal including a first Group IV element and Cl at a concentration of not more than 5&#xd7;10cmand that has an effective donor concentration of not less than 1&#xd7;10and not more than 6.0&#xd7;10cm, a second layer that includes a second GaO-based single crystal including a second Group IV element and that has a higher effective donor concentration than the first layer and is laminated on the first layer, an anode electrode formed on the first layer, and a cathode electrode formed on the second layer.

High voltage withstand Ga2O3-based single crystal schottky barrier diode

A nitride semiconductor crystal has a diameter of four inches or more and is warped to have a curvature radius of 100 m or more, and has an impurity concentration of 1&#xd7;10/cmor lower. A manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding a gallium trihalide gas having a partial pressure of 9.0&#xd7;10atm or higher onto the substrate, and growing a GaN crystal in the &#x2212;C-axis direction on the substrate, where a growth temperature for the GaN crystal is 1200&#xb0; C. or higher, or a manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding an aluminum trihalide gas having a partial pressure of 9.0&#xd7;10atm or higher onto the substrate, and growing an AlN crystal in the &#x2212;C-axis direction on the substrate, where a growth temperature for the AlN crystal is 1400&#xb0; C. or higher.

Nitride semiconductor crystal, manufacturing method and manufacturing equipment

To provide a method for producing a Group III element nitride crystal by growing it on a plane on the &#x2212;c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystalon a crystal growth plane of a Group III element nitride seed crystalby vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystalor includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal. The crystal growth plane is a plane on the &#x2212;c-plane side. A crystal growth temperature is 1200&#xb0; C. or more. In the vapor phase growth step, the Group III element nitride crystal is grown in an approximately &#x2212;c direction.

Method for producing group III element nitride crystal, group III element nitride crystal, semiconductor device, method for producing semiconductor device, and group III element nitride crystal production device

InGaN-based light-emitting devices fabricated on an InGaN template layer are disclosed.

Indium gallium nitride light emitting devices

The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200&#xb0; C.

Highly transparent aluminum nitride single crystalline layers and devices made therefrom

The present invention relates to a single-crystalline aluminum nitride wherein a carbon concentration is 1&#xd7;10atoms/cmor more and less than 3&#xd7;10atoms/cm, a chlorine concentration is 1&#xd7;10to 1&#xd7;10atoms/cm, and an absorption coefficient at 265 nm wavelength is 40 cmor less.

Single-cystalline aluminum nitride substrate and a manufacturing method thereof

A ZnO film production method includes: disposing a substrate on an installation base; and, while supplying chlorine gas from a chlorine gas supply source to a first raw material storing part Rand supplying oxygen gas from a third gas supply source (oxygen gas supply source) Ginto a reaction container, controlling heating units (heaters H, Hand H) with a control device CONT such that temperature Tof the first raw material storing part R, temperature Tof a second raw material storing part Rand temperature Tof the installation base on which the substrate is disposed satisfy a relationship of T&#x3c;T&#x3c;T. Thus, according to the production method of the present disclosure, it is possible to produce a high-quality ZnO film.

ZnO film production system and production method using ZnO film production system having heating units and control device

Growing community of inventors

Tokyo, Japan

Akinori Koukitu