Shibaura Mechatronics Corporation

Akinori Iso

Yukinobu Nishibe

Yuichi Imaoka

Konosuke Hayashi

Yuji Nagashima

Takashi Ootagaki

Takashi Takahashi

Kyota Kuroiwa

Keigo Oomori

Yosuke Mochizuki

According to an embodiment of the present disclosure, a heat treatment device includes: a chamber capable of maintaining an atmosphere that is decompressed from an atmospheric pressure; an exhaust unit capable of exhausting an inside of the chamber through an exhaust port provided in the chamber; a support portion provided inside the chamber and capable of supporting a workpiece; a first heating unit provided inside the chamber and capable of heating the workpiece; an adhesion preventive plate detachably provided on an inner wall of the chamber; and a second heating unit capable of heating the adhesion preventive plate.

Heat treatment device

According to one embodiment, an organic film forming apparatus includes a chamber configured to maintain an atmosphere more reduced than an atmospheric pressure, at least one processing room provided inside the chamber and being surrounded by a cover, and an exhaust part configured to exhaust the inside the chamber. The processing room includes an upper heating part including first heaters, a lower heating part including second heaters, and facing the upper heating part, an upper heat equalizing plate provided on the lower heating part side of the upper heating part, a lower heat equalizing plate provided on the upper heating part side of the lower heating part, and workpiece supporters configured to support a workpiece through a gap between the upper and lower heat equalizing plates.

Organic film forming apparatus

According to one embodiment, a floating conveyor is configured to convey a substrate while floating the substrate. The floating conveyor includes a lower floating section and an upper floating section with a conveying path of the substrate therebetween. A plurality of floating blocks that constitute at least one of the lower floating section and the upper floating section are arranged to be separated by a space, and a floating block that constitutes the other is arranged to face the space.

Floating conveyor and substrate processing apparatus

According to one embodiment, a substrate processing apparatus () includes: a support () configured to support a substrate (W) in a plane; a rotation mechanism () configured to rotate the support () about an axis that crosses a surface of the substrate (W) supported by the support () as a rotation axis; a plurality of nozzles (), which are aligned from the center toward the periphery of the substrate (W) supported by the support (), configured to eject a treatment liquid to the surface of the substrate (W) on the support () being rotated by the rotation mechanism (), and a controller () configured to control the nozzles to eject the treatment liquid at different ejection timings according to the thickness of a film of the treatment liquid formed on the surface of the substrate (W) on the support () being rotated by the rotation mechanism ().

Substrate processing apparatus and substrate processing method

An apparatus for processing a substrate in which the substrate is successively processed with different kinds of process solution. A spin chuck supports the substrate. A driving source rotates the spin chuck A nozzle member supplies a first process solution prepared by mixing sulfuric acid and a hydrogen peroxide solution at a predetermined mixing ratio to the substrate. A switching mechanism selects the sulfuric acid, the hydrogen peroxide solution and the second process solution supplied to the nozzle member A concentration adjusting mechanism adjusts the ratio of sulfuric acid to the hydrogen peroxide solution, which collectively form the first process solution, supplied to the nozzle member. A control device controls the supply of sulfuric acid, the hydrogen peroxide solution and the second process solution, which is switched by the switching mechanism.

Apparatus for processing substrate using process solutions having desired mixing ratios

A substrate is processed with a first process solution prepared by mixing sulfuric acid with a hydrogen peroxide solution, followed by processing the substrate with a second process solution. After the substrate is processed with the first process solution, the supply of sulfuric acid is stopped, with the hydrogen peroxide alone being supplied to the substrate. Then, the supply of the hydrogen peroxide solution is stopped, and the substrate is rinsed with a second process solution. The particular processing makes it possible to prevent the second process solution from reacting with sulfuric acid.

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Yokohama, Japan

Akinori Iso