Tohoku University

Tokyo Electron Limited

Other

Sharp Kabushiki Kaisha Corporation

Honda Motor Co., Ltd.

Fuji Electric Co., Ltd.

Fuji Electric Systems Co. Ltd.

Foundation for Advancement of International Science

Sumitomo Electric Industries, Limited

Yazaki Corporation

The Furukawa Electric Co., Ltd.

Zeon Corporation

Shin-Etsu Handotai Co., Ltd.

Stella Chemifa Corporation

Tokyo Eectron Limited

Akinobu Teramoto

Tadahiro Ohmi

Hiroshi Kambayashi

Takaaki Matsuoka

Hitoshi Sumida

Ken-ichi Nonaka

Toshio Naka

Shigetoshi Sugawa

Tetsuya Goto

Yasuo Kobayashi

Hirokazu Ueda

Katsunori Ueno

Kazuhide Hasebe

Toshihisa Nozawa

Junichi Kitagawa

Toshio Nakanishi

Alberto Oscar Adan

Yoshihiro Sato

Katsutoshi Ishii

Minoru Honda

Takehiko Nomura

Shigenori Ozaki

Tatsuya Sugimoto

Kazuki Moyama

Kohei Kawamura

Takanori Watanabe

Toshiro Yamada

Hiroo Yabe

Yoshihide Wakayama

Yuichiro Morozumi

Akira Shimizu

Katsushige Harada

Masayuki Miyashita

Hideki Yamanaka

Kimiaki Tanaka

Kiyoshi Demizu

Hidetoshi Wakamatsu

Tomoyuki Suwa

Yoshinobu Shiba

Rui Hasebe

Mitsuhiro Kikuta

Hiroaki Tanaka

Kenji Nagao

Kenichi Nakamura

Hiroshi Imai

Tatsunori Isogai

There is provided a film forming apparatus for forming a silicon nitride film on a substrate by having a precursor gas containing silicon to react with a reaction gas containing nitrogen, including: a processing container configured to form a vacuum atmosphere; a substrate mounting part installed in the processing container; a precursor gas supply part configured to supply a precursor gas into the processing container; a reaction gas supply part configured to supply a reaction gas containing nitrogen into the processing container; and an ultraviolet irradiating part configured to excite the reaction gas before the reaction gas reacts with the precursor gas, wherein a substrate on the substrate mounting part is not irradiated with an ultraviolet ray emitted from the ultraviolet irradiating part.

Film forming apparatus and film forming method

A method for rinsing a compound semiconductor, the method including a step of rinsing a compound semiconductor at a temperature of 80 degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, the compound semiconductor containing gallium as a constituent element, and the compound semiconductor having a surface of gallium nitride (GaN).

Method for rinsing compound semiconductor, solution for rinsing compound semiconductor containing gallium as constituent element, method for fabricating compound semiconductor device, method for fabricating gallium nitride substrate, and gallium nitride substrate

The semiconductor transistor according the present invention includes an active layer composed of a GaN-based semiconductor and a gate insulating film formed on the active layer. The gate insulating film has a first insulating film including one or more compounds selected from the group consisting of AlO, HfO, ZrO, LaO, and YOformed on the active layer, and a second insulating film composed of SiOformed on the first insulating film.

Semiconductor transistor

There is provided an accumulation-mode MOSFET. The accumulation-mode MOSFET has a tunnel electron emission portion and a thermionic emission portion which are provided in a source region portion.

Accumulation-mode MOSFET and driving method thereof

A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiOfilm and an AlOfilm is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.

Method for fabricating semiconductor device and the semiconductor device

Provided is a method of manufacturing a gallium-nitride-based semiconductor device, comprising forming a first semiconductor layer of a gallium-nitride-based semiconductor; and forming a recessed portion by dry etching a portion of the first semiconductor layer via a microwave plasma process using a bromine-based gas.

Manufacturing method of GaN-based semiconductor device and semiconductor device

A method of producing a semiconductor transistor involving formation of an ohmic electrode on an active layer composed of a GaN-based semiconductor includes a process of forming a first layercomposed of tantalum nitride on an active layerand a second layercomposed of Al layered on the first layerand a process of forming ohmic electrodesandin ohmic contact with the active layerby heat treating the first layerand the second layerat a temperature of from 520&#xb0; C. to 600&#xb0; C.

Method of producing semiconductor transistor

Disclosed is a solar cell comprising a solar cell semiconductor thin film formed on a base, a transparent conductive film formed on the semiconductor thin film, and a nitride-containing moisture diffusion-preventing film which covers the upper surface of the transparent conductive film. The moisture diffusion-preventing film is preferably composed of at least a silicon nitride film or a silicon carbide nitride (SiCN) film.

Solar cell wherein solar photovolatic thin film is directly formed on base

A semiconductor device manufacturing method includes exciting plasma, applying RF power onto a target substrate to generate substrate bias and performing an ion implantation plural times by applying the RF power in the form of pulses.

Semiconductor device manufacturing method and semiconductor device

A miniaturizable, low-cost highly reliable inverter unit. A control circuit section for controlling operating timing of high breakdown voltage semiconductor elements included in an inverter circuit section and first and second drive and abnormality detection circuit sections for outputting drive signals for driving the high breakdown voltage semiconductor elements according to the operating timing and for feeding back an abnormality of the inverter circuit section to the control circuit section are formed on an SOI substrate as one integrated circuit chip. On the integrated circuit chip, circuit formation areas which differ in reference potential are separated from one another by dielectrics. A plurality of level shifters for transmitting signals exchanged between circuit formation areas separated by the dielectrics are formed.

Inverter unit, integrated circuit chip, and vehicle drive apparatus

A multilayer wiring boardcomprises a first wiring regionwhere wiringsand insulating layersandare alternately laminated, and a second wiring regionwhere a thickness Hof an insulating layeris twice or more a thickness Hof the insulating layer in the first wiring regionand a width Wof a wiringis twice or more a width Wof the wiring in the first wiring region. The first wiring regionand the second wiring regionare integrally formed on the same board.

Multilayer wiring board

A semiconductor device manufacturing method which achieves a contact of a low resistivity is provided. In a state where a first metal layer in contact with a semiconductor is covered with a second metal layer for preventing oxidation, only the first metal layer is silicided to form a silicide layer with no oxygen mixed therein. As a material of the first metal layer, a metal having a work function difference of a predetermined value from the semiconductor is used. As a material of the second metal layer, a metal which does not react with the first metal layer at an annealing temperature is used.

Contact formation method, semiconductor device manufacturing method, and semiconductor device

A semiconductor device manufacturing method, the method including: forming a semiconductor element on a semiconductor substrate; and by using microwaves as a plasma source, forming an insulation film on the semiconductor element by performing a CVD process using microwave plasma having an electron temperature of plasma lower than 1.5 eV and an electron density of plasma higher than 1&#xd7;10cmnear a surface of the semiconductor substrate.

Semiconductor device manufacturing method

When positively charged ions are implanted into a target substrate, charge-up damage may occur on the target substrate. In order to suppress charge-up caused by secondary electrons emitted from the target substrate when positively charged ions are implanted, a conductive member is installed at a position facing the target substrate and electrically grounded with respect to a high frequency. Further, a field intensity generated in the target substrate may be reduced by controlling an RF power applied to the target substrate in pulse mode.

Ion implanting apparatus and ion implanting method

Growing community of inventors

Sendai, Japan

Akinobu Teramoto