Shin-etsu Chemical Co., Ltd.

Nippon Telegraph and Telephone Corporation

Nippon Telegraph and Telephone Public Corporation

Tosoh Corporation

Other

Fuji Photo Film Company, Limited

Shinto Paint Co., Ltd.

Nippon Telegraph & Telephone Co.

Akinobu Tanaka

Satoshi Watanabe

Keiichi Masunaga

Daisuke Domon

Yoshio Kawai

Saburo Imamura

Hiroshi Ban

Jiro Nakamura

Takeshi Kinsho

Takeru Watanabe

Toshinobu Ishihara

Katsuya Takemura

Shigehiro Nagura

Jun Watanabe

Takanobu Takeda

Fujio Yagihashi

Masao Morita

Toshiaki Tamamura

Tadahito Matsuda

Tamotsu Watanabe

Osamu Kogure

Katsuyuki Oikawa

Osamu Watanabe

Youichi Ohsawa

Minoru Takamizawa

Ryuji Koitabashi

Masazumi Hasegawa

Yoichi Osawa

Masaki Ohashi

Tsunehiro Nishi

Tadayoshi Kokubo

Tomoyoshi Furihata

Motoyuki Yamada

Junji Tsuchiya

Takao Kimura

Atsushi Sakamoto

Fujio Yagihasi

Ken Nishizaki

Yasuomi Okado

Kaysuya Takemura

Takesi Nagata

Katsuhide Onose

A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 &#x3bc;m, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized.

Chemically amplified negative resist composition and patterning process

There is disclosed a negative resist composition comprising at least: (A) a base polymer that is alkaline-soluble and is made alkaline-insoluble by action of an acid; (B) an acid generator; and (C) a basic component, wherein the base polymer at least contains a polymer including repeating units represented by the following general formula (1) and general formula (2) and having a weight average molecular weight of 1,000 to 10,000. There can be a negative resist composition hardly causing a bridge in forming a pattern and providing a high resolution and a patterning process using the same. 

Negative resist composition and patterning process

A negative resist composition comprises a base polymer comprising recurring units having an alkylthio group and having a Mw of 1000-2500, an acid generator, and a basic component, typically an amine compound containing a carboxyl group, but not active hydrogen. A 45-nm line-and-space pattern with a low value of LER can be formed.

The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, Flaser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

Resist composition and patterning process

There is disclosed a negative resist composition comprising at least (A) a base resin that is alkaline-soluble and is made alkaline-insoluble by action of an acid, and/or a combination of a base resin that is alkaline-soluble and is made alkaline-insoluble by reaction with a crosslinker by action of an acid, with a crosslinker, (B) an acid generator, and (C) a compound containing a nitrogen as a basic component, and forming a resist film having the film thickness X (nm) of 50 to 100 nm, wherein, in the case that the resist film is formed from the negative resist composition under the film-forming conditions for the pattern formation, a dissolution rate of the resist film into the alkaline developer used in the development treatment for the pattern formation is 0.0333X&#x2212;1.0 (nm/second) or more and 0.0667X&#x2212;1.6 (nm/second) or less. There can be a negative resist composition having excellent etching resistance and resolution and giving a good pattern profile even at the substrate's interface, a patterning process using the same, and a testing process and a preparation process of this negative resist composition.

Negative resist composition, patterning process, and testing process and preparation process of negative resist composition

A chemically amplified positive resist composition is provided comprising a polymer PB having an amine structure bound thereto and a polymer PA comprising recurring units having an acidic side chain protected with an acid labile protective group and recurring units having an acid generating moiety on a side chain.

Chemically amplified positive resist composition and pattern forming process

A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble polymer, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component, the polymer (A) turning alkali insoluble under the catalysis of acid. A basic polymer having a secondary or tertiary amine structure on a side chain serves as components (A) and (C). Processing the negative resist composition by EB or EUV lithography process may form a fine size resist pattern with advantages including uniform diffusion of base, improved LER, controlled deactivation of acid at the substrate interface, and a reduced degree of undercut.

Chemically amplified negative resist composition for EB or EUV lithography and patterning process

There is disclosed a negative resist composition wherein a base resin contains at least repeating units represented by the following general formula (1) and general formula (2) and has a weight average molecular weight of 1,000 to 10,000, and the compound containing a nitrogen atom as a basic component contains one or more kinds of amine compounds having a carboxyl group and not having a hydrogen atom covalently bonded to a base-center nitrogen atom. There can be a negative resist composition in which a bridge hardly occurs, substrate dependence is low and a pattern with a high sensitivity and a high resolution can be formed, and a patterning process using the same. 

A polymer is provided comprising recurring units having a N,N'-bis(alkoxymethyl)tetrahydropyrimidinone or N,N&#x2032;-bis(hydroxymethyl)tetrahydropyrimidinone structure on a side chain. When a chemically amplified negative resist composition is formulated using the polymer and processed by lithography, a fine resist pattern can be formed with the advantages of improved LER and high resolution.

Polymer, chemically amplified negative resist composition, and patterning process

A chemically amplified positive resist composition for EB or EUV lithography is provided comprising (A) a polymer or a blend of polymers wherein a film of the polymer or polymer blend is insoluble in alkaline developer, but turns soluble under the action of acid, (B) an acid generator, (C) a basic compound, and (D) a solvent. The basic compound (C) is a polymer comprising recurring units bearing a side chain having a secondary or tertiary amine structure as a basic active site and constitutes a part or the entirety of the polymer or polymers as component (A).

Chemically amplified positive resist composition for EB or EUV lithography and patterning process

In a chemically amplified resist composition comprising a base resin, an acid generator, and a solvent, 1,400-5,000 pbw of the solvent is present per 100 pbw of the base resin, and the solvent comprises at least 60 wt % of PGMEA and ethyl lactate, and 0.2-20 wt % of a high-boiling solvent. A resist pattern is formed by coating the resist composition on a substrate, prebaking, patternwise exposure, post-exposure baking, development, and heat treatment.

Patterning process

The present invention relates to a positive resist composition and to a pattern forming process using the same. The present invention provides: a positive resist composition having an enhanced etching resistance and an excellent resolution and being capable of providing an excellent pattern profile even at a substrate-side boundary face of resist, in photolithography for fine processing, and particularly in lithography adopting, as an exposure source, KrF laser, extreme ultraviolet rays, electron beam, X-rays, or the like; and a pattern forming process utilizing the positive resist composition.

Positive resist composition and pattern forming process

A polymer comprising a high proportion of aromatic ring structure-containing units and containing an aromatic sulfonic acid sulfonium salt on a side chain is used to form a chemically amplified positive photoresist composition which is effective in forming a resist pattern having high etch resistance. The polymer overcomes the problems of dissolution in solvents for polymerization and purification and in resist solvents.

Chemically amplified positive photoresist composition and pattern forming process

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Jyoetsu, Japan

Akinobu Tanaka