Nec Corporation

Akinobu Shibuya

Shintaro Yamamichi

Toru Mori

Yuzo Shimada

Takao Yamazaki

Akira Ouchi

Koji Matsui

Koichi Takemura

Tomoo Murakami

Mitsuru Kimura

Katsumi Kikuchi

Tadanori Shimoto

Takashi Manako

Kouji Matsui

Hidehito Matsuyama

A coating material includes a ceramic particle and binder. The ceramic particle includes a compound represented by a compositional formula of any of ARAlO, ARGaO, RAlO, and RGaO. A is one or more elements selected from a group consisting of Ca, Sr, and Ba, and R is one or more elements selected from a group consisting of rare earth elements. a is equal to or greater than 0.9 and equal to or less than 1.1, b is equal to or greater than 0.9 and equal to or less than 1.1, c is equal to or greater than 0.9 and equal to or less than 1.1, x is equal to or greater than 2.9 and equal to or less than 3.1, and y is equal to or greater than 4.9 and equal to or less than 5.1. The ceramic particle includes a pore and the porosity of the ceramic particle is equal to or greater than 20% and equal to or less than 40%.

Coating material and solidified body of coating material

An infrared ray radiated from a region of a surface of an object to which a coating film () of a coating material is provided is detected by an infrared sensor (). The coating film () includes a porous ceramic particle () and a binder (), and the ceramic particle () includes a compound represented by a compositional formula of any of ARAlO, ARGaO, R, AlO, and RGaO. Here, A is one or more elements selected from a group consisting of Ca, Sr, and Ba, and R is one or more elements selected from a group consisting of rare earth elements. Also, a is equal to or greater than 0.9 and equal to or less than 1.1, b is equal to or greater than 0.9 and equal to or less than 1.1, c is equal to or greater than 0.9 and equal to or less than 1.1, x is equal to or greater than 2.9 and equal to or less than 3.1, and y is equal to or greater than 4.9 and equal to or less than 5.1. A porosity of the ceramic particle (22) is equal to or greater than 20% and equal to or less than 40%.

Monitoring method, monitoring system, and structure, construction, or movable body

[Objective] To provide a ceramic emitter that exhibits high radiation intensity and excellent wavelength selectivity. [Solution] A ceramic emitter includes a polycrystalline body that has a garnet structure represented by a compositional formula RAlO(R: rare-earth element) or RGaO(R: rare-earth element) and has pores with a porosity of 20-40%. The pores have a portion where the pores are connected to one another but not linearly continuous, inside the polycrystalline body.

Ceramic emitter

Disclosed is a substrate for a semiconductor package in which leakage of radiation noise from a gap between a semiconductor element and a mounting substrate can be prevented. The substrate for the semiconductor package includes a coplanar waveguide including a signal and ground electrodes on the mounting substrate, the signal electrode flip-chip connected to the semiconductor element, the ground electrodes arranged on both sides of the signal electrode with intervals therebetween. A step part is formed in the ground electrodes in an outer circumferential part of a mounting region of the semiconductor element, the step part having a larger distance between upper surfaces of the mounting substrate and the ground electrode in the outer circumferential part of the mounting region than such distance in the mounting region, and an insulator for covering the signal electrode in the outer circumferential part of the mounting region is formed.

Substrate for semiconductor package and method of manufacturing thereof

A substrate and a semiconductor chip are connected by means of flip-chip interconnection. Around connecting pads of the substrate and input/output terminals of the semiconductor chip, an underfill material is injected. The underfill material is a composite material of filler and resin. Also, a first main surface of the substrate, which is not covered with the underfill material, and the side surfaces of the semiconductor chip are encapsulated with a molding material. The molding material is a composite material of filler and resin. An integrated body of the substrate and the semiconductor chip, which are covered with the molding material, is thinned from above and below.

Semiconductor device and method for manufacturing the same

In a capacitor producing method, a bottom electrode, a thin-film dielectric, and a top electrode are deposited on a substrate so as to form a capacitor, wherein defects including particles and electrical short-circuits between the bottom electrode and the top electrode are detected before the capacitor is divided into capacitor cells. Next, defects such as particles and electrical short-circuits between the bottom electrode and the top electrode are removed before the capacitor is divided into capacitor cells.

Capacitor producing method for producing thin-film capacitors eliminating defects

A substrate () and a semiconductor chip () are connected by means of flip-chip interconnection. Around connecting pads () of the substrate () and input/output terminals () of the semiconductor chip (), an underfill material () is injected. The underfill material () is a composite material of filler and resin in which the maximum particle diameter of the filler is 5 &#x3bc;m or below and whose filler content is 40 to 60 wt %. Also, a first main surface of the substrate (), which is not covered with the underfill material (), and the side surfaces of the semiconductor chip () are encapsulated with a molding material (). The molding material () is a composite material of filler and resin whose filler content is over 75 wt % and in which the glass transition temperature of the resin is over 180&#xb0; C. An integrated body of the substrate () and the semiconductor chip (), which are covered with the molding material (), is thinned from above and below.

A semiconductor device has an LSI device provided with a plurality of power supply line connection pads and ground line connection pad in a peripheral edge part of a circuit-formation surface, metal foil leadselectrically connected to each of the pads and adhered to the LSI device via an insulation layer, and decoupling capacitors mounted on one surface of the metal foil leads.

Semiconductor device with decoupling capacitors mounted on conductors

A thin film capacitor is provided with a substrate having a thickness equal to or more than 2 &mgr;m and equal to or less than 100 &mgr;m; a lower electrode on the substrate, which includes at least a highly elastic electrode and an anti-oxidation electrode on the highly elastic electrode; a dielectric thin film on the first lower electrode; and an upper electrode on the dielectric thin film; wherein the highly elastic electrode is made of a material having a Young's modulus higher than that of the anti-oxidation electrode.

Thin film capacitor, method for manufacturing the same and printed circuit board incorporating the same

A semiconductor device has an LSI device provided with a plurality of power supply line connection pads and ground line connection pad in a peripheral edge part of a circuit-formation surface, metal foil leads 5 electrically connected to each of the pads and adhered to the LSI device via an insulation layer, and decoupling capacitors mounted on one surface of the metal foil leads.

Semiconductor device and method for packaging same

A user uses part data forming means and module data forming means to input the actual dimension, physical constants and mesh dividing number for fundamental shapes which are registered in advance, thereby forming parts, and then indicates the relative position between the parts to form the entire shape of an assembly of plural parts without paying attention to coincidence or non-coincidence of nodal points. Data converting means divides the shape of each part thus assembled according to the indicated mesh divisional number to generate element data and nodal point data. Further, it generates a constraint equation for connecting nodal points which are non-connected between neighboring parts, and forms an analysis model . A finite element method analyzer uses approximate calculation means to approximate a non-connected nodal point displacement from a nodal point displacement of neighboring structural elements on the basis of the constraint equation.

Method, apparatus and computer program product for forming data to be analyzed by finite element method and calculation method based on finite element method

A semiconductor device provided with a thin film capacitor having a small equivalent series inductance is provided, which can be operated at a high frequency range and contributes to size reduction of the electronic devices. The semiconductor device comprises a device formed on a silicon substrate , interlayer insulating films , and , wiring blocks including a power source wire block and a ground wire block, and a thin film capacitor formed on an uppermost insulating layer. The thin film capacitor comprises a lower electrode connected to the ground wire block through a contact , an upper electrode which is connected to the power source wire block through a contact , and which extends above the lower electrode , and a dielectric layer which is inserted between the lower and the upper electrodes.

Semiconductor device, and thin film capacitor

A capacitor has a lower electrode, a dielectric thin film, an upper electrode, and an insulation cover layer formed on an insulation substrate made of an organic film or a ceramic material, and through holes formed at positions corresponding to input and output pads of a semiconductor element or to input and output terminals of a semiconductor package, with electrodes for connection to input and output pads of a semiconductor element or to input and output terminals of a semiconductor package provided within through holes. In a method for mounting the capacitor, the capacitor is interposed between a flip-chip connected semiconductor element and a mounting substrate.

Capacitor, capacitor mounting structure, method for manufacturing same, semiconductor device, and method for manufacturing same

There is provided a thin film resistor formed of titanium nitride containing oxygen in a solid solution condition.

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Tokyo, Japan

Akinobu Shibuya