Japan Aviation Electronics Industry, Limited

Nec Corporation

Denso Corporation

Akinobu Sato

Akiko Suzuki

Emmanuel Bourelle

Jiro Matsuo

Takeshi Kawano

Toshio Seki

Masahiro Yanagisawa

Ken Ajiki

Kazuhiko Yamada

Takaaki Aoki

Kazuhiko Hayashi

Hirotaka Hokkyo

The present invention provides a contact member that strikes a balance between low electrical resistance and sliding durability under the condition of load as low as aboutN. A contact member of the invention has a metal base and a coating disposed on at least part of the metal base. The coating contains fluorinated oil having a polar group, and metal particles surface-treated with a fluorine-based compound having a polar group.

Contact member, connector, composition, and method for producing contact member

The present invention provides a contact member that strikes a balance between low electrical resistance and sliding durability. A contact member of the invention has a metal base and a coating disposed on at least part of the metal base. The coating contains fluorinated oil having a polar group, and metal particles surface-treated with a fluorine-based compound having a polar group.

A chipping-proof nonmetal inorganic solid-state material is characterized in that the inorganic solid-state material has, in at least a part of a surface thereof, a surface structure in which a network of recesses and protuberances surrounded by the recesses are formed, the protuberances have an average width of 5 nm to 50 nm, a physical property of the surface structure differs from the physical property of an interior of the inorganic solid-state material lying below the surface structure, and there is no solid-solid interface between the surface structure and the interior of the inorganic solid-state material.

Chipping-proof inorganic solid-state material and chipping-proof edge tool

A slide part has a surface structure in which there are at least two periodic structures among a first periodic structure with a period of 10 nm to 100 nm inclusive and a depth of 5 nm to 50 nm inclusive, a second periodic structure with a period of 100 nm to 1000 nm inclusive and a depth of 20 nm to 500 nm inclusive, and a third periodic structure with a period of 1000 nm to 10000 nm inclusive and a depth of 100 nm to 3000 nm inclusive, in which one of the at least two periodic structures is formed on the other periodic structure.

Slide part and surface processing method of the same

A method of smoothing a solid surface with a gas cluster ion beam includes irradiating the solid surface with the gas cluster ion beam. The irradiating includes, when scratches which can be likened to a line-and-space pattern structure with widths and heights on the order of a submicrometer to micrometer are present on the solid surface, a process of emitting the gas cluster ion beam so as to expose substances, which remain on side-walls of the scratches due to lateral transferal caused by collisions with gas clusters, to other gas clusters, and the gas cluster ion beam diverges non-concentrically and/or non-uniformly.

Method of smoothing solid surface with gas cluster ion beam and solid surface smoothing apparatus

Slide part and surface processing methods of the same

Two surfaces forming a cutting edge and a ridge of a cutting edge existing along the boundary between the two surfaces intersecting with each other are irradiated with a gas cluster ion beam at the same time, the maximum height of the profile of the two surfaces being equal to or smaller than 1 &#x3bc;m. A facet is newly formed on the ridge of the cutting edge by performing the irradiation with the gas cluster ion beam in such a manner that the two surfaces are not perpendicularly but obliquely irradiated with the gas cluster ion beam, and at least a part of the ridge of the cutting edge is perpendicularly irradiated with the gas cluster ion beam.

Method of processing ridge of cutting edge and instrument with processed ridge of cutting edge

To enable fabrication of a precise stamped product having an extremely low surface roughness. Rippleshaving depths ranging from 10 to 100 nm are formed with periodicities ranging from 100 to 1000 nm on a stamping tool surface that comes into contact with a workpiece material. The rippleshave a stripe shape extending in a direction substantially perpendicular to the direction of sliding between the stamping tool (die) and the workpiece material (the direction of the arrow a). The ripplesserve as micro pools. For example, a product that is required to have a surface roughness of the order of several tens of nm or lower can be satisfactorily stamped.

Treatment method for stamping tool surface

In an edge tool having a cutting edge made of a nonmetal inorganic solid-state material with a facet formed on a ridge of the cutting edge, a pre-wearing layer having a thickness of 5 nm or more and having a surface structure formed by a network of recesses and protuberances surrounded by the recesses is formed on a surface of the facet. The average width of the protuberances is 5 nm to 50 nm. A property value of the pre-wearing layer is different from the property value of the inorganic solid-state material underlying the pre-wearing layer, and there is no solid-solid interface between the pre-wearing layer and the inorganic solid-state material.

Edge tool

The average roughness Ra of a mold tool surface that comes into contact with a material to be molded measured for a measurement area 10 &#x3bc;m square or smaller is equal to or lower than 5 nm, and fine granular projection structures having diameters ranging from 10 to 80 nm and heights ranging from 10 to 40 nm are formed on the mold tool surface with a density of 400/&#x3bc;mor higher. The frictional force due to the anchoring effect or the digging effect is reduced, and the adhesive force due to meniscus is also reduced. The release resistance is significantly reduced without affecting the dimensional precision of a fine molded product.

Treatment method for mold tool surface

In a method of irradiating a gas cluster ion beam on a solid surface and smoothing the solid surface, the angle formed between the solid surface and the gas cluster ion beam is chosen to be between 1&#xb0; and an angle less than 30&#xb0;. In case the solid surface is relatively rough, the processing efficiency is raised by first irradiating a beam at an irradiation angle &#x3b8; chosen to be something like 90&#xb0; as a first step, and subsequently at an irradiation angle &#x3b8; chosen to be 1&#xb0; to less than 30&#xb0; as a second step. Alternatively, the set of the aforementioned first step and second step is repeated several times.

Method for smoothing a solid surface

Stamping tool and treatment method for stamping tool surface

Surface roughness having intervals of several tens of nanometers to about a hundred micrometers in a solid surface is reduced by directing a gas cluster ion beam to the surface. An angle formed between the normal to the solid surface and the gas cluster ion beam is referred to as an irradiation angle, and an irradiation angle at which the distance of interaction between the solid and the cluster colliding with the solid dramatically increases is referred to as a critical angle. A solid surface smoothing method includes an irradiation step of directing the gas cluster ion beam onto the solid surface at an irradiation angle not smaller than the critical angle. The critical angle is 70&#xb0;.

A solid surface is processed while corner portions of a relief structure are protected from deformation. A method of processing a solid surface with a gas cluster ion beam includes a cluster protection layer formation step of forming, on the solid surface, a relief structure having protrusions with a cluster protection layer formed to cover an upper part thereof and recesses without the cluster protection layer; an irradiation step of emitting a gas cluster ion beam onto the solid surface having the relief structure formed in the cluster protection layer formation step; and a removal step of removing the cluster protection layer. A thickness T of the cluster protection layer satisfies where n is a dose of the gas cluster ion beam, and Y is an etching efficiency of the cluster protection layer, expressed as an etching volume per cluster (a and b are constants).

Growing community of inventors

Tokyo, Japan

Akinobu Sato