Kabushiki Kaisha Toshiba

Akiko Sekihara

Takeo Furuhata

Ichiro Mizushima

Takashi Nakao

Motoya Kishida

Tsubasa Harada

Yoshio Ozawa

Katsuyuki Sekine

Shuichi Samata

Junichi Shiozawa

Masanobu Ogino

Moriya Miyashita

Masanori Numano

Kensuke Takano

Tadahide Hoshi

Keiko Akita

A semiconductor device includes a semiconductor region, a tunnel insulating film formed on a surface of the semiconductor region, a charge-storage insulating film formed on a surface of the tunnel insulating film and containing silicon and nitrogen, a block insulating film formed on a surface of the charge-storage insulating film, and a control gate electrode formed on a surface of the block insulating film, wherein the tunnel insulating film has a first insulating film formed on the surface of the semiconductor region and containing silicon and oxygen, a second insulating film formed on a surface of the first insulating film, and a third insulating film formed on a surface of the second insulating film and containing silicon and oxygen, and a charge trap state in the second insulating film has a lower density than that in the charge-storage insulating film.

Semiconductor device and method for manufacturing the same

A semiconductor device including a semiconductor substrate; a first gate insulating film formed on the semiconductor substrate; a first gate electrode layer formed on the first gate insulating film; an element isolation insulating film formed so as to isolate a plurality of the first gate electrode layers; a second gate insulating film layer formed so as to cover upper surfaces of the plurality of first gate electrode layers and the element isolation insulating films; and a second gate electrode layer formed on the second gate insulating film layer; and the second gate insulating film layer includes a NONON stacked film structure and a nitride film layer contacting the first gate electrode layer and constituting a lowermost layer of the NONON stack film structure is separated at a portion interposing the plurality of neighboring first gate electrode layers.

Semiconductor device and method of manufacturing the same

A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.

Semiconductor device and its manufacturing method

A manufacturing method for manufacturing a semiconductor substrate has first annealing step for annealing silicon single crystal to permit oxygen embryos or oxygen precipitations grown from the oxygen embryos precipitating in a predetermined region and a second annealing step for permitting said oxygen embryos or said oxygen precipitations to contract using a second temperature range higher than the first temperature range, said second temperature range being high enough to contract said oxygen embryos and low enough to prevent redistribution of boron from affecting to device characteristics, to form a denuded zone in said predetermined region at the principal surface. An inspection method for inspecting a semiconductor substrate further has measuring step, subsequent to said first and second annealing steps for measuring the density of oxygen embryos grown into oxygen precipitations among those precipitated in said silicon single crystal.

Manufacturing method of semiconductor substrate and inspection method

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Kanagawa, Japan

Akiko Sekihara