Sony Corporation

Sony Group Corporation

Akiko Ogino

Kiyotaka Tabuchi

Yoichi Otsuka

Yoichi Ootsuka

Yoshinori Toumiya

Tomoyuki Yamashita

Yukihiro Sayama

Masaya Shimoji

Takayuki Shoya

Ikuo Yoshihara

Hideki Hirano

Kenju Nishikido

Haruhiko Ajisawa

Yoshikazu Tanaka

Iwao Sugiura

Takamasa Tanikuni

A solid-state imaging device includes: a first lens layer; and a second lens layer, wherein the second lens layer is formed at least at a periphery of each first microlens formed based on the first lens layer, and the second lens layer present at a central portion of each of the first microlenses is thinner than the second lens layer present at the periphery of the first microlens or no second lens layer is present at the central portion of each of the first microlenses.

Solid-state imaging device with layered microlenses and method for manufacturing same

A solid-state imaging device includes: multiple micro lenses, which are disposed in each of a first direction and a second direction orthogonal to the first direction, focus the incident light into the light-receiving surface; with the multiple micro lenses of which the planar shape is a shape including a portion divided by a side extending in the first direction and a side extending in the second direction being disposed arrayed mutually adjacent to each of the first direction and the second direction; and with the multiple micro lenses being formed so that the depth of a groove between micro lenses arrayed in a third direction is deeper than the depth of a groove between micro lenses arrayed in the first direction, and also the curvature of the lens surface in the third direction is higher than the curvature of the lens surface in the first direction.

Solid-state imaging device, solid-state imaging device manufacturing method, electronic device, and lens array

A solid-state imaging device includes: a photodiode formed to be segmented with respect to each pixel in a pixel area in which plural pixels are integrated on a light receiving surface of a semiconductor substrate; an insulator film formed on the semiconductor substrate to cover the photodiode; a recessed part formed with respect to each of the pixels in the insulator film in an upper part of the photodiode; a first light transmission layer of a siloxane resin formed to fill the recessed part and configure an optical waveguide in the pixel area; a second light transmission layer formed to configure an on-chip lens with respect to each of the pixels in the pixel area; and a guard ring formed to surround an outer circumference of the pixel area to partition an inner area containing the pixel area and an outer dicing area.

Solid-state imaging device

Solid-state imaging device having microlenses formed with different depths and curvature and method of manufacturing thereof

Semiconductor imaging device having ligth transmission layers formed relative to a guard ring structure in a predetermined manner

A solid-state imaging device with microlenses having a first lens layer and a second lens layer, the second lens layer being formed at least at a periphery of each microlens with either a portion of the second lens layer present at a central portion of each of the microlenses being thinner than a portion of the second lens layer present at the periphery of the microlens or no portion of the second lens layer being present at the central portion of each of the first microlenses. Between first pixel portions there is an interpixel gap, and the solid-state imaging device includes light blocking layers in alignment with the gaps.

A solid-state imaging device includes a plurality of pixels formed on a semiconductor substrate and include a photoelectric conversion unit; a color filter on the pixels; an on-chip microlens made of an organic film on the color filter, corresponding to each of the pixels; a first inorganic film formed on a surface of the on-chip microlens and having a higher refraction index than the on-chip microlens; and a second inorganic film formed on a surface of the first inorganic film and having a lower refraction index than the on-chip microlens and the first inorganic film, in which at least the second inorganic film includes a non-lens area at an interface of an adjacent second inorganic film.

Solid-state imaging device including an on-chip lens with two inorganic films thereon

A solid-state imaging device includes a light blocking layer formed in an active pixel region of a pixel region on a light incident side so as to surround a photoelectric conversion unit of each pixel and formed in an extending manner to an optical black region, a concave portion formed so as to be surrounded by the light blocking layer in a region corresponding to the photoelectric conversion unit, a first refractive index layer formed on surfaces of the light blocking layer and the concave portion and having a relatively low refractive index, a second refractive index layer formed on the first refractive index layer so as to be buried in the concave portion and having a relatively high refractive index, and an anti-flare layer formed on the first refractive index layer in the optical black region.

Solid-state imaging device, manufacturing method thereof, and electronic apparatus

A solid-state image capture device including: at least one photoelectric converter at an image capture surface of a substrate; at least one on-chip lens at the image capture surface of the substrate and above a light-receiving surface of the photoelectric converter; and an antireflection layer on an upper surface of the on-chip lens. The antireflection layer contains a binder resin having a lower refractive index than that of the on-chip lens and low-refractive-index particles having a lower refractive index than that of the binder resin.

Solid-state image capture device, manufacturing method therefor, and electronic apparatus

A method of producing a solid-state imaging device includes the steps of forming on a substrate a photoelectric conversion portion that receives light on a light-receiving surface and that photoelectrically converts the received light to generate a signal charge, forming above the light-receiving surface an optical waveguide that guides light to the light-receiving surface, and forming above the optical waveguide a color filter which colors light and from which colored light is emitted to the optical waveguide, wherein, in forming the color filter, the color filter is formed from a photosensitive resin film containing a dye by performing an exposure process and then performing a development process on the film, and in forming the optical waveguide, a core portion of the optical waveguide is formed so that the core portion absorbs exposure light radiated onto the photosensitive resin film when the exposure process is performed.

Growing community of inventors

Kumamoto, Japan

Akiko Ogino