Kabushiki Kaisha Toshiba

Mitsubishi Chemical Corporation

Akiko Mori

Tetsuya Yamaguchi

Hisanori Ihara

Hiroaki Ishiwata

Hidetoshi Nozaki

Kazuhiro Takahashi

Jun Kondo

Fujio Suzuki

Yuji Hiraki

Ei Yamada

Atsuko Kohara

Junko Suzuki

A ramp generation circuit including, a charge supply unit which generates predetermined charges every predetermined time, an integration circuit which accumulates the charges generated from the charge supply unit and converts the charges into a voltage, and, an attenuation unit which outputs, to an output terminal, a voltage obtained by attenuating a noise value of an output voltage from the integration circuit.

Ramp generation circuit and A/D converter

A solid-state image sensor comprises a photodiode which is provided in a p-type substrate or a p-type well and composed of a first n-type region for storing photoelectrically converted signal charges, a gate electrode provided above the substrate or well so as to be adjacent to one end of the photodiode, and a n-type drain provided at the surface of the substrate or well opposite to the photodiode, with the gate electrode interviewing therebetween. There is provided a second n-type region which is formed so as to be in contact with the upper part of the first n-type region on the gate electrode side and one end of which is formed to self-align with one end of the gate electrode to be part of the photodiode. This construction prevents the short-channel effect of the signal read transistor section and reduces or eradicates the left-over signal charges stored in the photodiode, thereby reducing noise and improving the sensitivity of the sensor.

Solid-state image sensor

In an amplifier-type solid-state image sensor device, each unit cell comprises a photoconverter and a signal scanning circuit in an image sensing region on a semiconductor substrate, a metal film has an opening region for defining regions where light is radiated in the photoconverters of the unit cells, and a center position of the opening region of the metal film is displaced to the side of the center of the image sensing region with respect to a center portion of the photoconverter, so that the amount of light entering the center of the semiconductor chip and the peripheral portions of the semiconductor chip can be made equal, thereby obtaining substantially the same sensitivity at the center and peripheral portions of the semiconductor chip.

Amplifier-type solid-state image sensor device

A novel human chondromodulin-I protein having a molecular weight of about 26,000 dalton on SDS-PAGE and capable of stimulating the growth of chondrocytes with or without FGF, promoting the differential potency of these cells, and inhibiting the growth of vascular endothelial cells, a DNA encoding this protein, expression vector containing the DNA, a transformant capable of producing recombinant chondromodulin-I protein, a process for producing chondromodulin-I protein by culturing the transformant and a pharmaceutical composition containing chondromodulin-I protein as an active ingredient.

Human chondromodulin-I protein

Growing community of inventors

Yokohama, Japan

Akiko Mori