Hitachi, Ltd.

Tokyo Institute of Technology

Akiko Kagatsume

Tomoji Watanabe

Tadanori Yoshida

Mutsuko Hatano

Isao Suzumura

Junichi Hanna

Masatoshi Wakagi

Etsuko Nishimura

Kenichi Onisawa

Momoyo Enyama

Makoto Sakakibara

Takafumi Miwa

Minseok Park

Yasuhiro Shirasaki

Mieko Matsumura

Hirokazu Tamaki

Kotoko Urano

Takashi Dobashi

Atsuko Shintani

Sayaka Kurata

Thantip Krasienapibal

A measurement system comprising: a measurement apparatus observing a sample based on an observation condition including parameters; and an observation condition database storing data in which a search key related to the sample and the observation condition, a control unit calculating information on an observation condition of a sample is configured to: receive an observation condition search request including a search key related to a target sample; refer the observation condition database to search for the first data matching or similar to the search key related to the target sample included in the observation condition search request, calculate, based on the searched first data, a candidate observation condition of the measurement apparatus for observing the target sample, and output display data for presenting the candidate observation condition.

Measurement system and method for setting observation conditions of measurement apparatus

Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450&#xb0; C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.

Semiconductor device, manufacturing method thereof, and display apparatus using the semiconductor device

To provide a process for producing a semiconductor, which can form a CVD film at a high film-forming rate with a good step coverage, good uniformities of film forming rate and sheet resistance in the in-plane region of a wafer and a good reproducibility at every wafers, and an apparatus for treating a semiconductor for the process. In a treating chamber kept under pressure of 1,000-50,000 Pa, a wafer is placed on a susceptor, and a film is deposited on the wafer by heating the wafer at 500&deg; C. or higher by a plate-shaped heater through the susceptor, while supplying a feed gas into the treating chamber at 500-50,000 sccm through gas injection nozzles provided near the center of a shower plate provided approximately in parallel with the wafer at a distance of 1-20 mm from the wafer and kept at a temperature of 200&deg; C. or lower.

Process for producing semiconductor and apparatus for production

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Tsuchiura, Japan

Akiko Kagatsume