Sony Semiconductor Solutions Corporation

Akiko Hirata

Masanaga Fukasawa

Kenichi Murata

Toshihiko Hayashi

Tetsuya Tatsumi

Yasufumi Miyoshi

Katsunori Hiramatsu

Tadayuki Kimura

Satoshi Hamaguchi

Kazuhiro Karahashi

Hideki Tsujiai

Provided is a light detection apparatus with high functionality. The light detection apparatus includes an effective region provided with a photoelectric converter that detects irradiation light and performs photoelectric conversion, and a peripheral region provided adjacent to the effective region. The photoelectric converter has a stacked structure including a first photoelectric conversion unit, a second photoelectric conversion unit, and a first optical filter. The first photoelectric conversion unit detects light in a first wavelength range of the irradiation light and performs photoelectric conversion. The second photoelectric conversion unit is provided so as to overlap with the first photoelectric conversion unit, detects light in a second wavelength range of the irradiation light, and performs photoelectric conversion. The first optical filter is provided between the first photoelectric conversion unit and the second photoelectric conversion unit and through which the light in the second wavelength range transmits more easily than the light in the first wavelength range. The peripheral region is provided with a second optical filter through which the light in the second wavelength range transmits more easily than the light in the first wavelength range.

Light detection apparatus, light detection system, electronic equipment, and mobile body

A first etching method of an oxide semiconductor film according to an embodiment of the present disclosure includes: forming a reduction layer in an oxide semiconductor film with use of a reducing gas; and sputtering the reduction layer with use of a rare gas.

Etching method of oxide semiconductor film, oxide semiconductor workpiece, and electronic device

In an etching method for an oxide semiconductor film according to an embodiment of the present disclosure, a modified layer is formed in the oxide semiconductor film by using a first rare gas and the modified layer is sputtered by using a second rare gas different from the first rare gas.

Etching method for oxide semiconductor film

The present technology relates to a semiconductor device, a manufacturing method, and a solid-state imaging device which are capable of suppressing a decrease in bonding strength and preventing a poor electrical connection or peeling when two substrates are bonded to each other. Provided is a semiconductor device, including: a first substrate including a first electrode including a metal; and a second substrate bonded to the first substrate and including a second electrode including a metal. An acute-angled concavo-convex portion is formed on a side surface of a groove in which the first electrode is formed and a side surface of a groove in which the second electrode metal-bonded to the first electrode is formed. The present technology can be, for example, applied to a solid-state imaging device such as a CMOS image sensor.

Semiconductor device, manufacturing method, and solid-state imaging device

Growing community of inventors

Kanagawa, Japan

Akiko Hirata