Kabushiki Kaisha Toshiba

Mitsubishi Electric Corporation

Kioxia Corporation

Toshiba Memory Corporation

Tokyo Electron Kabushiki Kaisha

Tokyo Electron Sagami Limited

Tokyo Electron Tohoku Kabushiki Kaisha

Tokyo Electron Kabushiki

Akihito Yamamoto

Yoshio Ozawa

Masayuki Tanaka

Katsuaki Natori

Katsuyuki Sekine

Daisuke Nishida

Ryota Fujitsuka

Fumitaka Arai

Riichiro Shirota

Masahiro Kiyotoshi

Takashi Nakao

Ichiro Mizushima

Yuuichi Mikata

Hiroshi Akahori

Yuichi Sasaki

Yuichi Mikata

Toshitake Yaegashi

Yoshitaka Tsunashima

Takashi Suzuki

Masayuki Ichige

Kentaro Mori

Shigehiko Saida

Yoshihiko Saito

Hideyuki Kobayashi

Yoshio Kasai

Sohei Osawa

Naohiko Yasuhisa

Yoshihiro Ogawa

Yoshihiro Ueda

Yasuaki Ootera

Naoharu Shimomura

Tsuyoshi Kondo

Susumu Hiyama

Yukihiro Ushiku

Kenichi Yamaga

Takashi Shimizu

Michael Arnaud Quinsat

Mutsumi Okajima

Masaki Kado

Shuichi Samata

Nobuyuki Umetsu

Kikuo Yamabe

Takeo Furuhata

Junichi Shiozawa

Isao Kamioka

Kunihiro Terasaka

Takanori Tsuda

Souichi Nadahara

Kazuaki Nakajima

Tsutomu Nakanishi

Hiroaki Yamada

Shingo Watanabe

Hirokazu Ishida

Minako Inukai

Kaori Umezawa

Masaki Kamimura

Shuji Katsui

Noriyoshi Mashimo

Masaharu Abe

Ryota Fujisuka

Hiroshi Ogino

Tsutomo Nakanishi

A magnetic memory includes first magnetic members extending along a first direction. First and second wirings are spaced apart from the first magnetic members on a second end side of the first magnetic members. At least one of the first magnetic members is between the first and second wirings in a plan view from the first direction. A second magnetic member has a first portion facing the first wiring and electrically connected to a first magnetic member on one side and a second portion facing the first wiring on an opposite side. The second portion is electrically connected to another first magnetic member. A control circuit causes a current to flow through one of the first wiring or the second wiring when data is written into the first magnetic member that is between the first wiring and the second wiring.

Magnetic memory

A semiconductor memory includes a plurality of stripe-like active areas formed by stacking, in a direction perpendicular to a substrate, a plurality of layers extending parallel to the substrate, a first gate electrode formed on first side surfaces of the active areas, the first side surfaces being perpendicular to the substrate, a second gate electrode formed on second side surfaces of the active areas, the second side surfaces being perpendicular to the substrate. The layers are patterned in self-alignment with each other, intersections of the active areas and the first gate electrode form a plurality of memory cells, and the plurality of memory cells in an intersecting plane share the first gate electrode.

Semiconductor memory and method of manufacturing the same

A magnetic memory of the present embodiment includes an electrode extending along a plane including a first direction and a second direction, a first wiring extending in the first direction, second wirings between the electrode and the first wiring, extending in the second direction and arranged in the first direction, first magnetic members each including a first part electrically connected to the first wiring and a second part electrically connected to the electrode, extending in a third direction, and being positioned between neighboring two of the second wirings when seen from the third direction, and a control circuit. When writing first information to one first magnetic member, the control circuit supplies first current to at least two second wirings positioned on one side of the one first magnetic member in the first direction.

A touch panel device includes processing circuitry to generate coordinate information indicating a position of a touch operation; to generate a pressing value corresponding to pressing force applied to an operation surface of a touch panel; to classify the positions of touch operations included in operation logs each being data including the coordinate information and information indicating the pressing value into groups and to determine group regions respectively corresponding to the groups; to determine a threshold value of the pressing value in each of the group regions based on the operation logs; and to judge that the touch operation is a depressing operation with pressing force if the pressing value is greater than or equal to the threshold value and to judge that the touch operation is a normal touch operation other than the depressing operation if the pressing value is less than the threshold value.

Touch panel device, operation identification method, and storage medium storing operation identification program

A touch panel device includes processing circuitry to generate coordinate information based on a signal outputted from the touch panel and to output a detection value based on depressing force. The processing circuitry previously stores a plurality of pieces of predictive detection value information, selects a piece of predictive detection value information based on a gradient of the detection value, obtains a final predictive detection value that the predictive detection value finally reaches by using the selected predictive detection value information, obtains a present predictive detection value by using the selected predictive detection value information, and executes a correction process of reducing influence of a memory effect by bringing a present detection value close to the final predictive detection value when an absolute value of a difference between the present predictive detection value and the present detection value is less than or equal to a predetermined threshold value.

Touch panel device, memory effect correction method, and storage medium storing memory effect correction program

A touch panel device includes: a touch panel; an elastic member that supports the touch panel; a plurality of depressing force sensors arranged at installation positions where depression or upward warps of the touch panel occur due to the application of depressing force; and processing circuitry to obtain touch coordinates; to obtain a plurality of detection values corresponding to the sensor signals; and to load a plurality of predetermined depressing force calculation modes from a storage storing a plurality of regions on the operation surface and the plurality of predetermined depressing force calculation modes corresponding to the plurality of regions, to select a depressing force calculation mode for a region corresponding to the touch coordinates from the plurality of depressing force calculation modes, and to calculate the depressing force by using the selected depressing force calculation mode and the plurality of detection values.

Touch panel device, depressing force calculation method, and storage medium storing depressing force calculation program

A touch screen device includes: a touch screen that includes an operation surface on which touch operations are performed, and in which capacitances change at regions of the operation surface touched by conductors; a pressure sensor unit to output a signal corresponding to a pressing value of a pressing force applied to the operation surface; and a controller to calculate coordinates indicating positions of the touch operations on the operation surface based on the capacitances. The touch operations include first and second touch operations. The controller determines touch operation information input by the second touch operation to be valid when a condition is satisfied, and determines the touch operation information to be invalid when the condition is not satisfied. The condition is that the first touch operation is being performed and a pressing value of a pressing force of the first touch operation is within a predetermined reference pressure range.

Touch screen device

A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.

Nonvolatile semiconductor memory

A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, wherein forming the second insulating film comprises forming an insulating film containing silicon using source gas not containing chlorine, and forming an insulating film containing oxygen and a metal element on the insulating film containing silicon.

Method of manufacturing semiconductor device

A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, the second insulating film including a lower silicon nitride film, a lower silicon oxide film formed on the lower silicon nitride film, an intermediate insulating film formed on the lower silicon oxide film and containing a metal element, the intermediate insulating film having a relative dielectric constant of greater than 7, an upper silicon oxide film formed on the intermediate insulating film, and an upper silicon nitride film formed on the upper silicon oxide film.

Semiconductor device and method for manufacturing the same

Growing community of inventors

Naka-gun, Japan

Akihito Yamamoto