Mitsubishi Electric Corporation

Akihito Ono

Yoichiro Mitani

Kimio Shigihara

Takeharu Kuroiwa

Shinji Abe

Takanori Tanaka

Nobuyuki Tomita

Yasuhiro Kimura

Zempei Kawazu

Yoshihiko Toyoda

Kenichi Hamano

Naoyuki Kawabata

Junji Ochi

The object of the present invention is to enhance the device yield of SiC epitaxial wafers. The SiC epitaxial wafer includes a drift layer which is a SiC epitaxial layer. The drift layer has a film thickness of 18 &#x3bc;m or more and 350 &#x3bc;m or less and has arithmetic average roughness of 0.60 nm or more and 3.00 nm or less, and the impurity concentration thereof is 1&#xd7;10/cmor more and 5&#xd7;10/cmor less.

SiC epitaxial wafer and manufacturing method of the same

A method for manufacturing a SiC epitaxial wafer includes: a first step of, by supplying a Si supply gas and a C supply gas, performing a first epitaxial growth on a SiC bulk substrate with a 4H&#x2014;SiC(0001) having an off-angle of less than 5&#xb0; as a main surface at a first temperature of 1480&#xb0; C. or higher and 1530&#xb0; C. or lower; a second step of stopping the supply of the Si supply gas and the C supply gas and increasing a temperature of the SiC bulk substrate from the first temperature to a second temperature; and a third step of, by supplying the Si supply gas and the C supply gas, performing a second epitaxial growth on the SiC bulk substrate having the temperature increased in the second step at the second temperature.

Method for manufacturing SiC epitaxial wafer

A semiconductor laser device can suppress electrode-to-electrode resonance of laser light emitted from an active layer, increasing electrical conversion efficiency. The semiconductor laser device has a substrate and an active layer. The energy of the laser light emitted from the active layer is smaller than the band gap energy of the substrate, and the carrier concentration of the substrate is at least 2.2&#xd7;10cm.

Semiconductor laser device

Growing community of inventors

Tokyo, Japan

Akihito Ono