Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Joled Inc.

Samsung Display Co., Ltd.

Panasonic Coproration

Akihito Miyamoto

Takaaki Ukeda

Yuko Okumoto

Norishige Nanai

Takashi Ohtsuka

Masumi Izuchi

Hiroaki Iijima

Hideyuki Tanaka

Kenichi Sasai

Yoshichika Osada

Noboru Yamada

Kiyoyuki Morita

Kazuhiro Watanabe

Soji Tsuchiya

Katsuhiro Nichogi

Kiyoshi Morimoto

The light-emitting device includes a flexible substrate, a lower barrier layer positioned above the flexible substrate, a light-emitting element and a thin-film transistor controlling the light-emitting element positioned above the lower barrier layer, a first upper barrier layer positioned above the light-emitting element and including a first inorganic material, and a second upper barrier layer positioned above the thin-film transistor and including a second inorganic material. The first upper barrier layer and the second upper barrier layer are spaced from each other at least in a region between the light-emitting element and the thin-film transistor.

Light-emitting device comprising flexible substrate and light-emitting element

The light-emitting device according to one aspect of the present disclosure includes a flexible substrate, a lower barrier layer positioned above the flexible substrate, a first light-emitting element and a second light-emitting element positioned above the lower barrier layer, a first upper barrier layer positioned above the first light-emitting element and including a first inorganic material, and a second upper barrier layer positioned above the second light-emitting element and including a second inorganic material. The first upper barrier layer and the second upper barrier layer are spaced from each other at least in a region between the first light-emitting element and the second light-emitting element.

A thin film transistor according to the present disclosure including: a gate electrode above a substrate; a gate insulating layer covering the gate electrode; a semiconductor layer above the gate insulating layer; and a source electrode and a drain electrode which are above the gate insulating layer, and electrically connected to the semiconductor layer, in which the gate insulating layer includes a first area and a second area, the first area being above the gate electrode, the second area being different from an area above the gate electrode, and made of a same substance as the first area, and the first area has a higher density than a density of the second area.

Thin film transistor, organic EL light emitting device, and method of fabricating thin film transistor

In a method for producing a display panel, a base substrate having an upper surface on which an electrode is located is prepared. A first layer having a first opening overlapping with the electrode in plan-view is formed on the base substrate. A second layer having a second opening overlapping with the first opening in plan-view is formed on the first layer. The second opening has a smaller area than the first opening in plan-view. A wiring layer is formed in the first opening and the second opening, in contact with the electrode. The second layer includes a portion located on an upper surface of the first layer and a portion located in the first opening. The portion of the second layer located in the first opening covers an internal side surface of the first layer located around the first opening.

Method for producing display panel, and display panel

A method of manufacturing a display panel includes a sub-step of forming a photosensitive material layer for formation of a second layer on a first layer, a sub-step of disposing, over the photosensitive material layer, a photomask having a different degree of transparency in a first region and a second region thereof, the first region overlapping the photosensitive material layer, in plan view, at a location for formation of a second aperture, and the second region being a remainder of the photomask other than the first region, and a sub-step of exposing the photosensitive material layer via the photomask. In plan view, the area of the first region in the photomask is larger than the area of a first aperture in the first layer.

Method of fabricating display panel

An electronic device including: a substrate; a bank formed above the substrate; a semiconductor layer formed within an aperture surrounded by the bank; and electrodes electrically connected to the semiconductor layer. An outline of the aperture in plan view includes a first straight edge, a second straight edge continuous with one end of the first edge via a first connector, and a straight third edge continuous with the other end of the first edge via a second connector. The area of a first connector region differs from the area of a second connector region, the first connector region being defined by a first imaginary straight line along the first edge, a second imaginary straight line along the second edge, and the first connector, and the second connector region being defined by a third imaginary straight line along the third edge, the first imaginary straight line, and the second connector.

Electronic device and electronic device manufacturing method

An electronic device including: a substrate; a bank formed on an upper surface of the substrate, surrounding an area of the upper surface of the substrate, and defining an aperture from which the area is exposed; a liquid-philic layer formed on a peripheral portion of the area, and not overlapping a central portion of the area; a semiconductor layer formed within the aperture, and attaching to at least a portion of the central portion and to an upper surface of the liquid-philic layer; and a pair of electrodes that are in contact with an area of the semiconductor layer, the area of the semiconductor layer not overlapping the liquid-philic layer in plan view. The bank has a liquid-phobic lateral surface surrounding the aperture, and the upper surface of the liquid-philic layer has a higher degree of liquid-philicity than the upper surface of the substrate.

A thin film transistor element is formed in each of adjacent first and second apertures defined by partition walls. In plan view of a bottom portion of the first aperture, a center of a total of areas of a source electrode portion and a drain electrode portion is offset from a center of area of the bottom portion in a direction opposite a direction of the second aperture, and in plan view of a bottom portion of the second aperture, a center of a total of areas of a source electrode portion and a drain electrode portion is offset from a center of area of the bottom portion in a direction opposite a direction of the first aperture.

Thin-film transistor device and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device

A thin film transistor element includes: a gate electrode; a source electrode and a drain electrode; an insulating layer; partition walls; and an organic semiconductor layer. The partition walls define a first aperture. Within the first aperture, at least a part of the source electrode and at least a part of the drain electrode are in contact with the semiconductor layer. The partition walls have side face portions facing the first aperture, and some of the side face portions have gentler slopes than the rest of the side face portions.

Thin-film transistor element and method for producing same, organic EL display element and method for producing same, and organic EL display device

The organic thin-film transistor according to the present invention includes: a gate electrode line on a substrate in a first region: a first signal line layer in a second region; a gate insulating film covering the gate electrode line and the first signal line layer; bank layers on the gate insulating film; a second signal line layer on the bank layer over the first signal line; a drain electrode and a source electrode line which are located on the bank layers and in at least one opening between the bank layers in the first region; a semiconductor layer located at least in the opening and banked up by the bank layers, the drain electrode, and the source electrode line; and a protection film covering the semiconductor layer.

Thin-film transistor and method of manufacturing the same

A thin film transistor element includes: a gate electrode; a source electrode and a drain electrode; an insulating layer; partition walls; and an organic semiconductor layer. The partition walls define a first aperture. Within the first aperture, at least a part of the source electrode and at least a part of the drain electrode are in contact with the semiconductor layer. In plan view of the bottom of the first aperture, the center of the total of the areas of the source electrode and the drain electrode is offset from the center of the area of the bottom in a given direction.

Thin-film transistor element and method for producing same, organic el display element, and organic el display device

A thin film transistor element is formed in each of a first aperture and a second aperture defined by partition walls, which further define a third aperture that is adjacent to the first aperture with a gap therebetween and is located in a direction, from the first aperture, differing from a direction of the second aperture. In plan view, at a bottom portion of the first aperture, a center of area of a liquid-philic layer portion is offset from a center of area of the bottom portion in a direction differing from a direction of the third aperture, and at a bottom portion of one of the first and second apertures, a center of area of a liquid-philic layer portion is offset from a center of area of the bottom portion in a direction differing from a direction of the other one of the first and second apertures.

Thin-film transistor device and method for manufacturing same, organic electroluminescent display elements and organic electroluminescent display device

In a thin film transistor device, partition walls define first, second, and third apertures. In plan view, at a bottom portion of the first aperture, a center of a total of areas of a source electrode portion and a drain electrode portion is offset from a center of area of the bottom portion in a direction differing from a direction of the third aperture, and at a bottom portion of one of the first and second apertures, a center a total of areas of a source electrode portion and a drain electrode portion is offset from a center of area of the bottom portion in a direction differing from a direction of the other one of the first and second apertures.

A thin film transistor element includes a gate electrode, an insulating layer formed on the gate electrode, and partition walls formed on the insulating layer and defining a first aperture above the gate electrode. The thin film transistor element further includes, at a bottom portion of the first aperture, a source electrode and a drain electrode that are in alignment with each other with a gap therebetween, a liquid-philic layer, and a semiconductor layer that covers the source electrode, the drain electrode, and the liquid-philic layer as well as gaps therebetween. The liquid-philic layer has higher liquid philicity than the insulating layer, and in plan view of the bottom portion of the first aperture, a center of area of the liquid-philic layer is offset from a center of area of the bottom portion of the first aperture.

Thin-film transistor element and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device

Growing community of inventors

Osaka, Japan

Akihito Miyamoto