Fujitsu Semiconductor Limited

Chiyoda Corporation

Tonen Corporation

Akihisa Yamaguchi

Eiji Yoshida

Takeshi Minami

Noriyuki Yoneda

Hideki Sugiyama

Fumihiko Uemura

Hiroyuki Ogawa

Kazuhiko Hamato

Chieko Nagasawa

Ikuo Ohta

Yoshihiro Nakagawa

A semiconductor storage device includes: memory cells including a transistor and a capacitor; bit lines; word lines; and sense amplifiers including first and second sense amplifiers, wherein the memory cells includes: a first memory cell group sharing a first auxiliary word line; and a second memory cell group sharing a second auxiliary word line, wherein the word lines includes a first word line coupled to the first auxiliary word line and a second word line coupled to the second auxiliary word line, the first word line is coupled to the first auxiliary word line in a first word line contact region, the second word line is coupled to the second auxiliary word line in a second word line contact region, the bit lines includes first and second bit lines coupled to the first sense amplifier on both sides of the first word line contact region.

Semiconductor storage device and method of manufacturing the same

A semiconductor device includes a silicon substrate; an element isolation region; an element region including a first well; a contact region; a gate electrode extending from the element region to a sub-region of the element isolation region between the element region and the contact region; a source diffusion region; a drain diffusion region; a first insulating region contacting a lower end of the source diffusion region; a second insulating region contacting a lower end of the drain diffusion region; and a via plug configured to electrically connect the gate electrode with the contact region. The first well is disposed below the gate electrode and is electrically connected with the contact region via the silicon substrate under the sub-region. The lower end of the element isolation region except the sub-region is located lower than the lower end of the first well.

Semiconductor device, semiconductor integrated circuit, SRAM, and method for producing Dt-MOS transistor

Memory cells adjacent to each other in a second direction are formed in a first p-type well region, a first n-type well region, and a second p-type well region arranged in a first direction. Each memory cell includes a first transfer transistor and a first driver transistor formed in the first p-type well region, a second transfer transistor and a second driver transistor formed in the second p-type well region, and first and second load transistors formed in the first n-type well region. In an SRAM, gate electrodes of the first and second transfer transistors of the memory cells adjacent to each other in the second direction are electrically connected to first and second word lines, respectively. The first and second word lines are electrically connected to the first and second p-type well regions, respectively.

Semiconductor device

Catalyst particles are contacted with a liquid and a gas in a vertically extending cylindrical vessel. The particles and liquid are placed in the vessel into which the gas and liquid are continuously fed from the bottom thereof so that an upwardly flowing mixture comprising the particles, liquid and gas is formed. The mixture is introduced into a gas separating zone disposed adjacent to an upper portion of the vessel to separate the mixture by gravity into a gas phase, a supernatant liquid phase and a phase rich in the catalyst particles. The gas and supernatant phases are continuously withdrawn from the separating zone while the catalyst particles-rich phase is continuously recycled to the bottom of the vessel by gravity.

Method of contacting catalyst particles with gas and liquid

A process for the production of a carbonyl compound such as acetic acid by reacting a carbonylatable compound such as methanol with a carbon monoxide in the presence of a carbonylation catalyst containing a noble metal complex supported on a porous, cross-linked vinylpyridine resin at a temperature of 140-250.degree. C., a carbon monoxide partial pressure of 7-30 kg/cm.sup.2 and a hydrogen partial pressure of 0.1-5 kg/cm.sup.2 to obtain a liquid product containing the carbonyl compound and an unreacted CO-containing gas product. The water content and the carbonylation degree of the liquid product within the reactor are maintained at 0.5-10% by weight and 0.5-0.9, respectively, The carbonyl compound is separated from the liquid product in a flasher and/or a distillation tower formed of titanium or a titanium-palladium alloy. The liquid product is introduced into a pressure reducing valve and then mixed with the CO-containing gas product before being fed to the flasher and/or distillation tower.

Growing community of inventors

Yokohama, Japan

Akihisa Yamaguchi