Semiconductor Energy Laboratory Co., Ltd.

Konica Minolta, Inc.

Akihisa Shimomura

Shunpei Yamazaki

Hidekazu Miyairi

Koichiro Tanaka

Atsuo Isobe

Tetsuhiro Tanaka

Mai Akiba

Yasumasa Yamane

Masaki Koyama

Tatsuya Arao

Koji Dairiki

Chiho Kokubo

Aiko Shiga

Yuhei Sato

Fumito Isaka

Masahiko Hayakawa

Hiroshi Shibata

Naoki Okuno

Kosei Nei

Hideomi Suzawa

Junpei Momo

Sachiaki Tezuka

Ryo Tokumaru

Sho Kato

Tatsuya Mizoi

Yasuhiro Jinbo

Yutaka Okazaki

Eiji Higa

Mitsuhiro Ichijo

Kenji Kasahara

Kenichi Okazaki

Shinya Sasagawa

Hironobu Shoji

Toshiya Endo

Takahisa Ishiyama

Hisashi Ohtani

Masaaki Hiroki

Motomu Kurata

Tamae Takano

Tomoaki Moriwaka

Naoto Yamade

Hideto Ohnuma

Ryoji Nomura

Satoshi Toriumi

Masashi Oota

Takashi Ohtsuki

Masashi Tsubuku

Junya Maruyama

Satoru Okamoto

Katsuaki Tochibayashi

Tetsuya Kakehata

Yuji Egi

Ryu Komatsu

Yasuyuki Arai

Junichi Koezuka

Yoshitaka Yamamoto

Takashi Hamada

Toshihiko Takeuchi

Motoki Nakashima

Noritaka Ishihara

Hiroaki Honda

Suguru Hondo

Hiromichi Godo

Osamu Nakamura

Daisuke Matsubayashi

Kaoru Hatano

Hajime Tokunaga

Kazuya Hanaoka

Taiga Muraoka

Daigo Ito

Yoshikazu Hiura

Sho Nagamatsu

Satoshi Seo

Yoshiyuki Kurokawa

Kiyoshi Kato

Takayuki Ikeda

Yoshiyuki Kobayashi

Takeshi Nishi

Kosei Noda

Kensuke Yoshizumi

Yuta Endo

Akihiro Chida

Takuya Tsurume

Daiki Nakamura

Hiroko Abe

Takuya Hirohashi

Yoshinobu Asami

Yasunori Yoshida

Atsushi Hirose

Tetsunori Maruyama

Tamae Moriwaka

Shuji Fukai

Teruyuki Fujii

Satohiro Okamoto

Hiromi Sawai

Masayuki Kimura

Yusuke Kubota

Noriyoshi Suzuki

Kenichiro Makino

Takashi Hirose

A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

Semiconductor device

An inkjet head includes a first and a second channel substrates. At least one of the first and the second channel substrates is formed of silicon. A bonding interface of the first and the second channel substrates is bonded via an adhesive layer. A protective film containing a compound having a Si—C bond is formed on: an ink channel surface formed of silicon among the first and the second channel substrates; and a surface of the channel substrate side formed of silicon in the adhesive layer.

Inkjet head, and method for producing inkjet head

There is provided a nozzle plate of an inkjet head, the nozzle plate including: a first surface that is bonded to an upper layer substrate by an adhesive; and a second surface in which an opening of a nozzle that ejects an ink is provided. A step is formed at an edge of the first surface.

Nozzle plate, inkjet head, nozzle plate manufacturing method, and inkjet head manufacturing method

A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

Semiconductor device and manufacturing method thereof

An inkjet head contains a silicon nozzle substrate having an ink channel surface and an ink ejection surface facing the channel surface, and having a nozzle penetrating from the channel surface to the ejection surface; a channel substrate bonded to the channel surface of the silicon nozzle substrate, and including an ink channel and a substrate body that forms the ink channel; and a liquid-repellent film provided on the ejection surface of the silicon nozzle substrate. The channel substrate includes a through channel that penetrates the substrate body so as to face the nozzle, n-number of individual circulation channels that communicate with the through channel, extend in a direction away from the nozzle, and have a portion overlapping the substrate body in a plan view. A positional relationship between each of the individual circulation channels and the nozzle satisfies a specific Expression 1.

Inkjet head, production method for inkjet head, and inkjet-recording device

Provided is an inkjet head containing a nozzle plate having at least a substrate, wherein the nozzle plate has a liquid-repellent layer on an outermost surface of the substrate on an ink ejection surface side; a liquid-repellent layer base film is provided between the substrate and the liquid-repellent layer; and the liquid-repellent layer base film contains at least silicon (Si) and carbon (C), and having a maximum peak P of a binding energy of a Si2p orbital of a surface portion measured by X-ray photoelectron spectroscopy is in the range represented by the following Formula (1), Formula (1): 99.6 (eV)≤P≤101.9 (eV).

Inkjet head, method of manufacturing inkjet head, and inkjet recording method

Provided is an inkjet head containing: a substrate having a nozzle hole, and a nozzle plate having a liquid repellent layer on an outermost surface of the substrate on an ink discharge surface side, wherein the nozzle plate has a conductive layer between the substrate and the liquid repellent layer.

Inkjet head and image forming method

To provide a semiconductor device in which a large current can flow. To provide a semiconductor device which can be driven stably at a high driving voltage. The semiconductor device includes a semiconductor layer, a first electrode and a second electrode electrically connected to the semiconductor layer and apart from each other in a region overlapping with the semiconductor layer, a first gate electrode and a second gate electrode with the semiconductor layer therebetween, a first gate insulating layer between the semiconductor layer and the first gate electrode, and a second gate insulating layer between the semiconductor layer and the second gate electrode. The first gate electrode overlaps with part of the first electrode, the semiconductor layer, and part of the second electrode. The second gate electrode overlaps with the semiconductor layer and part of the first electrode, and does not overlap with the second electrode.

To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

Oxide semiconductor film and semiconductor device

Disclosed is a method of manufacturing, a metal nozzle plate, in which is formed a nozzle for discharging a liquid and that is to be bonded with adhesive to a head chip provided with an actuator for discharging the liquid, the method including: forming the nozzle in a metal plate-like member; forming a groove in the metal plate-like member; and performing exterior processing with respect to the nozzle plate.

Method of manufacturing nozzle plate, and inkjet head

An inkjet head manufacturing method for an inkjet head that includes a head chip including: a nozzle ejecting ink; and a flow path substrate including an ink flow path which communicates with the nozzle and through which the ink flows, the method including: composite substrate manufacturing that is manufacturing a composite substrate including a plurality of regions which forms flow path substrates by being split; first protective film forming that is forming a first protective film on a surface of the composite substrate and an inner wall surface of the ink flow path; splitting that is splitting the composite substrate into the flow path substrates; and second protective film forming that is forming a second protective film on at least an exposed face in a split face of the flow path substrate generated in the splitting, the exposed face being exposed in a surface of the head chip.

Inkjet head manufacturing method, inkjet recording device manufacturing method, inkjet head, and inkjet recording device

To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

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Kanagawa, Japan

Akihisa Shimomura