Kabushiki Kaisha Toshiba

Toshiba Materials Co., Ltd.

Akihisa Nitta

Takashi Ishigami

Noriaki Yagi

Koichi Watanabe

Toshihiro Maki

Shinichi Yamamoto

Hiromichi Horie

Koichi C/o Toshiba Materials Co Ltd Watanabe

Toshihiro c/o Intellectual Property Division Maki

An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B; and one kind of a second element selected from C, O, N and H in a proportion of 0.01 at ppm to 50 at % of the first element, with the balance comprising substantially Al. In addition to having low resistance, such an Al interconnector line of thin film can prevent the occurrence of hillocks and the electrochemical reaction with an ITO electrode. The interconnector line of thin film can be obtained by sputtering in a dust-free manner by using a sputter target having a similar composition.

Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same

According to one embodiment, there is provided an X-ray tube target. The X-ray tube target has a structure in which a carbon base material is bonded with an Mo base material or Mo alloy base material with a joint layer. The joint layer includes an MoNbTi diffusion phase, an NbTi alloy phase, an Nb-rich phase and a ZrNb alloy phase when the ratios of components in the joint layer are detected by EPMA.

X-ray tube target, X-ray tube using the same, X-ray inspection device and method of producing X-ray tube target

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Yokohama, Japan

Akihisa Nitta