Screen Holdings Co., Ltd.

Akihisa Iwasaki

Ayumi Higuchi

Kenji Kobayashi

Takahiro Yamaguchi

Naoyuki Osada

Shota Iwahata

Kazuhide Saito

Kenji Izumoto

Eri Fujita

Takemitsu Miura

Hiroaki Takahashi

Masaki Inaba

Yuya Akanishi

Yasutoshi Okuno

A substrate processing method processes a substrate which has a metal layer on a principal surface. The substrate processing method includes a metal oxide layer forming step in which an oxidizing fluid is supplied toward the principal surface of the substrate, thereby forming a metal oxide layer constituted of one atomic layer or several atomic layers on a surface layer of the metal layer and a metal oxide layer removing step in which an etching fluid containing at least one of water in a gaseous state and water in a mist state as well as a reactive gas that reacts with the metal oxide layer together with the water is supplied toward the principal surface of the substrate, thereby etching the metal oxide layer and selectively removing it from the substrate. Then, cycle processing in which the metal oxide layer forming step and the metal oxide layer removing step are given as one cycle is executed at least in one cycle, thereby controlling the etching amount of the metal layer for each cycle at an accuracy of a nanometer or less.

Substrate processing method and substrate processing apparatus

A substrate processing method includes a substrate holding step of holding a substrate having a front surface on which a metal is exposed, an inert gas replacing step of replacing an atmosphere around the front surface of the substrate with an inert gas by supplying an inert gas to a vicinity of the front surface of the substrate, an adjusting step of adjusting a pH of the rinsing liquid so as to form an inactive state in which the metal does not react with the rinsing liquid or so as to form a passive state by allowing the metal to react with the rinsing liquid, and a rinsing liquid supplying step of supplying the rinsing liquid whose pH has been adjusted to the front surface of the substrate after the atmosphere around the front surface of the substrate has been replaced with the inert gas.

Substrate processing method and substrate processing device

The substrate processing apparatus includes common piping which guides a processing liquid to a branching portion, supply piping which guides the processing liquid from the branching portion to a chemical liquid nozzle, return piping which guides the processing liquid from the branching portion, and a discharge valve which changes a flow rate of the processing liquid supplied from the common piping to the branching portion. The discharge valve makes a valve element stationary at a plurality of positions including a discharge execution position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate larger than a maximum value of a suction flow rate and a discharge stop position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate smaller than the maximum value of the suction flow rate.

Substrate processing apparatus and substrate processing method

A substrate in which a low dielectric constant film is formed on a front surface thereof is processed. A densification step of densifying a surface layer portion of the low dielectric constant film to change to a densified layer is executed. Then, after a densified layer forming step, a repair liquid supplying step of supplying a repair liquid, for repairing the densified layer, to a front surface of the low dielectric constant film is executed.

Substrate treatment method

A substrate processing method which processes a substrate having a metal layer on a surface thereof includes a metal oxide layer forming step of forming a metal oxide layer formed of one atomic layer or several atomic layers on a surface layer of the metal layer by supplying an oxidizing fluid to the surface of the substrate, and a metal oxide layer removing step of selectively removing the metal oxide layer from the surface of the substrate by supplying an etchant to the surface of the substrate.

In a substrate processing apparatus, an outer edge portion of a substrate in a horizontal state is supported from below by an annular substrate supporting part, and a lower surface facing part having a facing surface facing a lower surface of the substrate is provided inside the substrate supporting part. A gas ejection nozzle for ejecting heated gas toward the lower surface is provided in the lower surface facing part, and the substrate is heated by the heated gas when an upper surface of the rotating substrate is processed with a processing liquid ejected from an upper nozzle. Further, a lower nozzle is provided in the lower surface facing part, to thereby perform a processing on the lower surface with a processing liquid. Since the gas ejection nozzle protrudes from the facing surface, a flow of the processing liquid into the gas ejection nozzle can be suppressed during the processing.

A substrate processing apparatus includes a spray nozzle that allows a plurality of liquid droplets to collide with a substrate held by a spin chuck, a liquid piping that supplies a mixed liquid of water and a chemical liquid to the spray nozzle, a first flow control valve and a second flow control valve each of which changes the concentration of the chemical liquid in the mixed liquid, and a controller that causes the liquid piping to supply the mixed liquid having a concentration of the chemical liquid determined in accordance with a substrate to be processed.

Growing community of inventors

Kyoto, Japan

Akihisa Iwasaki