Renesas Electronics Corporation

Akihiro Tobita

Tamaki Wada

Seiichi Ichihara

Toshihiko Akiba

Yuki Yagyu

A manufacturing method of a BGA, includes the steps of: providing a semiconductor chip having electrode pads; and removing a natural oxide film formed on the surface of each of the electrode pads. Further, a first film comprised of a conductive member is formed on the surface of the electrode pad exposed by removing the natural oxide film, a wire is connected with the first film, and part of the wire is brought into contact with the electrode pad to form an alloy layer at the interface between the wire and the electrode pad. The crystal structure of the first film is comprised of a body-centered cubic lattice or a hexagonal close-packed lattice. The cost of the semiconductor device can be reduced while the bonding reliability of wire bonding of the semiconductor device is ensured.

Bonding wire to bonding pad

A semiconductor device has a conductive member coupled to the surface of a bonding pad exposed from an opening formed in a passivation film. A second planar distance between a first end of an electrode layer and a first end of a bonding pad is greater than a first planar distance between the first end of the electrode layer and a first end of an opening. Since the second planar distance between the first end of the electrode layer and the first end of the bonding pad is long, even when a coupled position of wire is deviated to the first end side of the electrode layer, stress caused by coupling of the wire to a stepped portion of the electrode layer can be prevented from being transmitted to the first end portion of the bonding pad.

Semiconductor device having electrode/film opening edge spacing smaller than bonding pad/electrode edge spacing

In connection with a semiconductor device in which a conductive member is coupled to the surface of a bonding pad exposed from an opening formed in a passivation film, there is provided a technique able to suppress the occurrence of a crack in the passivation film. A second planar distance between a first end of an electrode layer and a first end of a pad is greater than a first planar distance between the first end of the electrode layer and a first end of an opening. Since the second planar distance between the first end of the electrode layer and the first end of the pad is long, even when a coupled position of wire is deviated to the first end side of the electrode layer, stress caused by coupling of the wire to a stepped portion of the electrode layer can be prevented from being transmitted to the first end portion of the pad.

Growing community of inventors

Kawasaki, Japan

Akihiro Tobita