Hitachi, Ltd.

Other

Akihiro Tamba

Ryuichi Saito

Takayoshi Nakamura

Yutaka Kobayashi

Toshio Ogawa

Kazuji Yamada

Atsuo Nishihara

Yoji Nishio

Masataka Minami

Kazuhiro Suzuki

Yasuo Kaminaga

Hiroshi Fujii

Kinya Nakatsu

Hiroki Yamamoto

Takashi Namekawa

Hisanori Okamura

Jun Murata

Seigou Yukutake

Takashi Naitou

Naohiro Momma

Hiroyuki Miyazawa

Kyoichiro Asayama

Tomoyuki Someya

Hideyuki Miyazawa

Masahiro Iwamura

Tatsumi Yamauchi

Hiroyuki Tomita

Yasushi Sasaki

Junichi Saeki

Koji Sasaki

Takashi Akioka

Tetsurou Matsumoto

Kinya Mitsumoto

Masahiro Hiraga

Hirokazu Inoue

Masataka Sasaki

Masaaki Takahashi

Makoto Ishii

Shuko Yamauchi

Norinaga Suzuki

Shinji Hiramitsu

Yutaka Maeno

Tatsuya Shigemura

Kazuhiro Ito

Noritaka Kamimura

Masahiro Gouda

Yukio Sonobe

Ruichi Saito

An inverter apparatus includes a liquid path in which cooling water flows, and in which the cooling water performs cooling at a cooling part located directly underneath the power circuit part of the inverter apparatus. The liquid path includes a first partial structure part formed between a feed pipe and the cooling part, and having a liquid path cross-sectional profile that is gradually reduced in the short-side direction of the cooling part and that is gradually enlarged in the long-side direction thereof; and a second partial structure part formed between the cooling part and a drain pipe, and having a liquid path cross-sectional profile that is gradually enlarged from the short-side of the cooling part and that is gradually reduced from the long-side thereof.

Electrical apparatus, cooling system therefor, and electric vehicle

A power semiconductor module having a surface of the power semiconductor chip and an external circuit pattern connected by an aluminum wire, and sealed with an epoxy resin, wherein wire diameter of the aluminum wire is 0.4&#xb1;0.05 mm&#x3c6;, and coefficient of linear expansion of the epoxy resin in a rated temperature range of a module is from 15 to 20 ppm/K.

Power semiconductor module

The present invention is a semiconductor apparatus having at least a part of a semiconductor device conjugated to a metal material for heat sink via an electric insulating material, wherein said electric insulating material is a bismuth glass layer.

Heat transfer structure for a semiconductor device utilizing a bismuth glass layer

According to the invention, there is provided a water cooled inverter structure forming a plurality of shallow cavities and deep cavities in a housing, fixing a bottom surface of power semiconductor modules to shallow cavities to form a shallow water channel and directly cooling the power semiconductor modules using this shallow water channel. Since cooling water flows fast in the shallow water channel, it is possible to improve a cooling efficiency and also reduce pressure loss using a deep water channel with deep cavities. Furthermore, providing a plurality of cavities makes it possible to reduce a size of the power semiconductor modules and provide a plurality of power semiconductor modules, thus improving reliability. It is possible to place a control board below the water channel to thermally cut off the control board from the power semiconductor modules, which makes it possible to reduce temperature of a control circuit.

Water cooled inverter

A liquid-cooled circuit device including: a module having a circuit element and a module base plate on surface of which the circuit element is mounted; a circuit case for accommodating the module; and a cooling liquid chamber for flowing a cooling liquid in contact with a back face of the module base plate of said module. The module base plate of the module is fitted into an opening provided in a member forming the cooling liquid chamber and welded without a gap.

Liquid cooled circuit device

Liquid cooled circuit device and a manufacturing method thereof

A semiconductor module in which a lead electrode is integrally formed with or pressed into resin separated from a resin case, and a connector securing a pad for bonding a metal wire to the lead electrode is bonded to a substrate with a power semiconductor element mounted thereon by an adhesive, and the like in a similar manner as the module case. According to the present invention, an electrode can be disposed in an appropriate position in the semiconductor module, and the scope of the free layout is enhanced.

Semiconductor module and power converting apparatus using the module

A power semiconductor module comprising a power semiconductor element included in a power circuit portion and mounted on a metal base, a first resin molded to the power semiconductor element, a control circuit element disposed on the first resin and included at least in a portion of the control circuit, and a control terminal connected to the power circuit portion and having an exposed portion thereof in the surface of the first resin, in which a portion of the control circuit is connected with the power circuit portion at the exposed portion of the control terminal. Accordingly, a resin mold type power semiconductor module capable of realizing a high performance of the control circuit portion at low cost can be realized.

Power semiconductor module and motor drive system

A semiconductor device includes a main circuit part having a semiconductor device formed on an electrode plate of a lead frame and a control circuit part having protective functions, which is integrally molded by a resin mold part into an integral mold structure.

Semiconductor device including an integrally molded lead frame

Growing community of inventors

Hitachinaka, Japan

Akihiro Tamba