Jsr Corporation

Kabushiki Kaisha Toshiba

Subaru Corporation

Akihiro Takemura

Hirotaka Shida

Tetsuya Kaneko

Hiroyuki Yano

Masayuki Hattori

Gaku Minamihaba

Taichi Abe

Atsushi Shigeta

Naoto Miyashita

Nobuo Kawahashi

Dai Fukushima

Masayuki Motonari

Nobuyuki Kurashima

Kazuya Okazaki

Tomohisa Konno

Takeshi Nishioka

Yoshitaka Matsui

Kazuo Nishimoto

Kenji Iwade

Kazuhito Uchikura

Shinichi Hirasawa

Takafumi Shimizu

Kazuhiko Ida

Tomokazu Mori

Tatsuaki Sakano

Fumihiro Nei

Mitsuru Meno

Yousuke Shibata

Shou Kubouchi

Masatoshi Ikeda

Yuuji Namie

Kouhei Yoshio

Susumu Yamamoto

Yoshikuni Tateyama

A vehicle fuel system according to the invention includes a fuel filler flap that blocks an opening of a fuel filler space to be openable and closable, a locking mechanism that regulates opening and closing operation of the fuel filler flap, and a detector that detects the opening and closing operation of the fuel filler flap. A controller is able to determine an operational state of the fuel filler flap multiple times within one driving cycle of a vehicle, which improves a frequency of diagnosing the operational state of the fuel filler flap and a stuck-closed state of the detector.

Vehicle fuel system and vehicle fuel system malfunction detection method

A fuel tank system for a vehicle includes a fuel tank, a fuel supply passage, a canister, an evaporated fuel gas supply passage, a communication passage, a backflow prevention device, first and second pressure measurement devices, and a control device. The fuel tank stores fuel supplied by the fuel supply passage. The canister adsorbs evaporated fuel gas generated in the fuel tank and supplied through the evaporated fuel gas supply passage. The backflow prevention device is provided in a pipe line of the fuel supply passage, and prevents a backflow of the fuel from the fuel tank. The first and second pressure measurement devices respectively measure pressures in the fuel supply passage and the evaporated fuel gas supply passage. The control device diagnoses the communication passage as being blocked when a difference between pressure values measured by the first and second pressure measurement devices exceeds a predetermined value.

Fuel tank system for vehicle and abnormality diagnosis method of the fuel tank system

A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12.

Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method for semiconductor device

A chemical mechanical polishing aqueous dispersion including (A) silica particles, and (B1) an organic acid, the sodium content, the potassium content, and the ammonium ion content of the silica particles (A) determined by ICP atomic emission spectrometry, ICP mass spectrometry, or ammonium ion quantitative analysis using ion chromatography having a relationship in which the sodium content is 5 to 500 ppm and at least one of the potassium content and the ammonium ion content is 100 to 20,000 ppm.

Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method

A chemical mechanical polishing aqueous dispersion is used to polish a polishing target that includes an interconnect layer that contains tungsten. The chemical mechanical polishing aqueous dispersion includes: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica particles. The content (M) (mass %) of the cationic water-soluble polymer (A) and the content (M) (mass %) of the iron (III) compound (B) satisfy the relationship 'M/M=0.004 to 0.1'. The chemical mechanical polishing aqueous dispersion has a pH of 1 to 3.

Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method

A chemical mechanical polishing aqueous dispersion that is used to polish a polishing target that includes a wiring layer that contains tungsten, the chemical mechanical polishing aqueous dispersion including: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica having an average particle diameter calculated from a specific surface area determined by the BET method of 10 to 60 nm, the content (M) (mass %) of the cationic water-soluble polymer (A) and the content (M) (mass %) of the colloidal silica (C) satisfying the relationship 'M/M=0.0001 to 0.003', and the chemical mechanical polishing aqueous dispersion having a pH of 1 to 3.

Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method

Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device. A first aqueous dispersion contains a water-soluble quaternary ammonium salt, an inorganic acid salt, abrasive grains and an aqueous medium. A second aqueous dispersion contains at least a water-soluble quaternary ammonium salt, another basic organic compound other than the water-soluble quaternary ammonium salt, an inorganic acid salt, a water-soluble polymer, abrasive grains and an aqueous medium. The second aqueous dispersion is composed of a first aqueous dispersion material (I) obtained by mixing a water-soluble quaternary ammonium salt and an inorganic acid salt into an aqueous medium, and a second aqueous dispersion material (II) obtained by mixing a water-soluble polymer and another basic organic compound other than the water-soluble quaternary ammonium salt into an aqueous medium. Abrasive grains are contained in at least one of the aqueous dispersion materials.

Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing

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Yokkaichi, Japan

Akihiro Takemura