Mitsubishi Denki Kabushiki Kaisha

Other

Mitsubishi Electric Corporation

Dainippon Screen Mfg. Co., Ltd.

Akihiro Takami

Takashi Ishihara

Hideo Naomoto

Hiroaki Morikawa

Eiichi Tamaki

Takatoshi Chiba

Takashi Ito

Norio Hayafuji

Satoshi Arimoto

Takeshi Takada

Hirotaka Kizuki

Yoshinori Matsuno

Zempei Kawazu

Masato Yonezawa

Yoichiro Nishimoto

Kunihiko Nishimura

Yuji Ohkura

Yoshitatsu Kawama

Kotaro Mitsui

Seiji Ochi

Kazuo Mizuguchi

Manabu Katoh

Mari Tsugami

Kimikazu Hazumi

Zenpei Kawazu

The manufacturing method includes: forming a P-type silicon substrate and a high-concentration N-type diffusion layer, in which an N-type impurity is diffused in a first concentration, on an entire surface at a light-incident surface side; forming an etching resistance film on the high-concentration N-type diffusion layer and forming fine pores at a predetermined position within a recess forming regions on the etching resistance film; forming recesses by etching the silicon substrate around a forming position of the fine pores, so as not to leave the high-concentration N-type diffusion layer within the recess forming region; forming the low-concentration N-type diffusion layer, in which an N-type impurity is diffused in a second concentration that is lower than the first concentration, on a surface on which the recesses are formed; and forming a grid electrode in an electrode forming region at a light-incident surface side of the silicon substrate.

Photovoltaic device and manufacturing method thereof

A terminal box of an output part of a solar cell module, including a case and an outer lid that are molded with a thermoplastic resin and an removal cable cover that is of a knockout type and is arranged in the case includes an inner lid that covers to close an electric circuit that is housed in the case.

Terminal box

The present invention relates to a method of producing a recrystallized-material-member by melting a given zone of a crystalline-material-member and moving the molten zone continuously along the crystalline-material-member to recrystallize a desired region of the crystalline-material-member, wherein dimension of the molten zone of the crystalline-material-member is controlled to be constant and/or quality of crystal of the recrystallized-material-member is controlled to be uniform.

Method of producing recrystallized-material-member, and apparatus and heating method therefor

Method of producing recrystallized-material-member, and apparatus and

A solar battery cell, solar battery module, and solar battery module group achieving high product value by enabling the display of surface patterns without reducing the power generating efficiency of the solar battery cells are provided. The direction and/or reflectance of reflected light incident to the surface of the solar battery cell are varied by controlling the distribution of the rough surface structure imparted to the solar battery cell surface. The direction or reflectance of reflected light incident to the surface of the solar battery cell is changed in part depending upon the part of the semiconductor solar battery cell surface to which the light is incident. Semiconductor solar battery cells with high product value can therefore be achieved because patterns with strong visual impact can be displayed and easily recognized without reducing the power generation efficiency of the solar battery cell.

Solar battery cell, a solar battery module, and a solar battery module

In a method for fabricating an infrared detector, initially, a CdHgTe layer of a first conductivity type is produced on a front surface of a semiconductor substrate, a plurality of spaced apart CdHgTe regions of a second conductivity type, opposite the first conductivity type, are produced at the surface of the first conductivity type CdHgTe layer, and part of the surface of the first conductivity type CdHgTe layer between the second conductivity type CdHgTe regions is selectively irradiated with a charged particle beam to evaporate Hg atoms from that part, whereby a CdHgTe separation region of the first conductivity type and having a Cd composition larger than that of the first conductivity type CdHgTe layer is produced penetrating through the first conductivity type CdHgTe layer and surrounding each of the second conductivity type CdHgTe regions. Therefore, a highly-integrated high-resolution infrared detector with no crosstalk between pixels is achieved.

Infrared detector having active regions and isolating regions formed of

A method for producing a photo-voltaic infrared detector including growing a crystalline CdHgTe layer on a CdTe substrate by liquid phase epitaxy using a growth melt including tellurium as a solvent to which indium is added as a dopant impurity in a concentration of from 0.01 to 0.1 ppm; annealing the CdHgTe layer to produce a p-type CdHgTe layer including indium as an n-type background dopant impurity; forming an n-type region of a desired depth as a light receiving region at the surface of the p-type CdHgTe layer by implanting a dopant impurity producing n-type conductivity and annealing; and forming an n-side electrode on the n-type region and a p-side electrode a prescribed distance from the n-type region on the p-type CdHgTe layer.

Method of making II-VI semiconductor infrared light detector

A method of diffusing mercury into a crystalline compound semiconductor film including mercury includes forming an amalgam on a region of the semiconductor film into which mercury is to be diffused, forminq a protective film on the amalgam, and annealing, whereby mercury from the amalgam diffuses into the semiconductor film and the protective film prevents the mercury from escaping. Therefore, a complicated temperature profile is not required and the mercury diffusion is carried out without sealing the semiconductor film in a quartz tube. As a result, the instruments and materials used in the diffusion process are easily handled and the diffusion of mercury into a large-sized semiconductor film is possible.

Method of diffusing mercury into a crystalline semiconductor material

Growing community of inventors

Tokyo, Japan

Akihiro Takami