Hitachi-High-Technologies Corporation

Hitachi, Ltd.

Akihiro Sano

Kinya Kobayashi

Hideyuki Kazumi

Kiyomi Yoshinari

Atsumu Hirabayashi

Yasushi Terui

Toshiyuki Yokosuka

Kenko Uchida

Masamichi Sakaguchi

Haruo Akahoshi

Hitoshi Tamura

Takeyuki Itabashi

Shinichi Fukada

Akitaka Makino

Toshio Haba

Tsuyoshi Yoshida

Atsushi Ohtake

Eiji Ikegami

Kouichi Nakaune

Yasuyuki Miyamoto

A resin material of high strength and high voltage equipment capable of improving the reliability by using the resin material, the resin material being a hardened product including fine particles and resin ingredients, in which the fine particles have hydrophobic groups on the surface and have a particle diameter of 200 nm or less, the resin ingredients have hydrophilic groups on the side chains, and the fine particles form a plurality of linear aggregates inside the resin, thereby forming a dendritic structure.

Resin material and high voltage equipment using the resin material

A plasma processing apparatus for generating highly-uniform and stable plasma. In an apparatus for generating plasma by using a &#x3bc; wave, concerning a method for rotating the &#x3bc; wave in terms of time, a plurality of (larger than two and smaller than four) waveguides are used, then forming an angle between the respective waveguides, and setting a phase difference between respective electric fields therein. This configuration allows introduction of the circularly polarized wave into a processing chamber. At this time, there are provided configuration components such as a waveguide locating method, a unit therefor, a &#x3bc;-wave merging box, and a reflective-wave control unit using a reflection control chamber.

Plasma processing apparatus

During the structural analysis of a protein or peptide by tandem mass spectroscopy, a peptide ion derived from a protein that has already been measured and that is expressed in great quantities is avoided as a tandem mass spectroscopy target. A peptide derived from a minute amount of protein, which has heretofore been difficult to analyze, can be automatically determined as a tandem mass spectroscopy target within the real time of measurement. Data concerning a protein that has already been measured and a peptide derived from the protein is automatically stored in an internal database. The stored data is collated with measured data with high accuracy to determine an isotope peak. In this way, the process of selecting a peptide peak that has not been measured as the target for the next tandem analysis can be performed within the real time of measurement and a redundant measurement of peptides derived from the same protein can be avoided. The information contained in the MSspectrum is effectively utilized in each step of the MSinvolving a multi-stage dissociation and mass spectroscopy (MS), so that the flows for the determination of the next analysis content and the selection of the parent ion for the MSanalysis, for example, can be optimized within the real time of measurement and with high efficiency and accuracy. Thus, a target of concern to the user can be subjected to tandem mass spectroscopy without wasteful measurement.

Mass spectrometer system

The object of the present invention is to provide a film thickness distribution analysis method that ensures quick and effective prediction of film thickness distribution by computer simulation in the pattern plating process. On the circuit pattern of a printed circuit board, in the method for analyzing the thickness distribution of metal film plated selectively, hypothetically dividing the printed circuit board into one or more regions, introducing pattern density &#x3b8;j=Aj/Sj (Sj: the area Sj of a desired region j, and Aj: the area of the plated surface inside the area j), and calculating the approximate average current density or film thickness distribution based on 'approximation averaged by pattern density'.

Analysis method of film thickness distribution and design system of printed circuit board and manufacturing processes

An apparatus for performing a plasma-etching of a LSI device including a Cu interconnection, a low-k film, and a diffusion prevention film has a treatment chamber, into which an etching gas is introduced, and a support table which is equipped with electrodes and on which said LSI device is placed. In this apparatus, the etching gasses are turned into plasma by supplying radio frequency power to electrodes provided within the treatment chamber, so that the LSI device is etched with ions of the plasma. In this apparatus, a sulfur-containing gas and a fluorine-containing gas are mixed to the etching gasses, so that the diffusion prevention film is selectively etched against the low-k film.

LSI device etching method and apparatus thereof

Plating method using an additive

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Hitachi, Japan

Akihiro Sano