Osaka University

Tokyo Electron Limited

Daikin Industries, Ltd.

Jsr Corporation

Akihiro Oshima

Seiichi Tagawa

Seiji Nagahara

Tomoki Nagai

Takehiko Naruoka

Hisashi Nakagawa

Hideki Nakaya

Kazuyuki Satoh

Yuko Shiotani

Kazuyuki Satou

Yoshikage Ohmukai

Kousuke Yoshihara

Ikuo Yamamoto

Masayuki Tsuji

Osamu Yamamoto

Tatsuya Takakuwa

Tomohiro Yoshida

Satoru Shimura

Shinichiro Kawakami

Takayuki Tanaka

Michio Matsuda

Mitsuhiro Usugaya

Gousuke Shiraishi

Yasuhiro Nakano

Masaru Tomono

Eiji Masuda

Yuuta Hasumoto

Masao Noumi

Akira Shimodo

Ryosuke Senba

Kohei Yamanoi

Chisato Higashi

This disclosure provides a method for producing a hydrofluoroolefin (HFO) or fluoroolefin (FO), which is a target compound, with high selectivity, without requiring a high temperature and a catalyst in a synthesis process of the target compound. Specifically, the present disclosure provides a method for producing a hydrofluoroolefin or fluoroolefin having two, three, or four carbon atoms, comprising irradiating at least one starting material compound selected from the group consisting of hydrofluorocarbons having one or two carbon atoms and hydrofluoroolefin As having two or three carbon atoms with ionizing radiation and/or an ultraviolet ray having a wavelength of 300 nm or less, with the proviso that when the at least one starting material compound is the hydrofluoroolefin A, the resulting hydrofluoroolefin is different from the hydrofluoroolefin A.

Manufacturing method for hydrofluoroolefin or fluoroolefin

A method for producing low-molecular-weight polytetrafluoroethylene which includes: (1) irradiating high-molecular-weight polytetrafluoroethylene with radiation to a dose of 250 kGy or higher substantially in the absence of oxygen to provide low-molecular-weight polytetrafluoroethylene having a melt viscosity at 380° C. of 1.0×10to 7.0×10Pa·s. Also disclosed is a powder containing the low-molecular-weight polytetrafluoroethylene, the powder being substantially free from any of perfluorooctanoic acid and salts thereof.

Method for producing low-molecular weight polytetrafluoroethylene, and powder

Provided is a method for producing low-molecular-weight polytetrafluoroethylene which is less likely to generate C6-C14 perfluorocarboxylic acids and salts thereof. The disclosure relates to a method for producing low-molecular-weight polytetrafluoroethylene having a melt viscosity at 380&#xb0; C. of 1.0&#xd7;10to 7.0&#xd7;10Pa&#xb7;s. The method includes (1) irradiating high-molecular-weight polytetrafluoroethylene with radiation in a substantially oxygen-free state and decomposing the high-molecular-weight polytetrafluoroethylene into a low-molecular-weight component and (2) deactivating, in a substantially oxygen-free state, at least part of main-chain radicals and end radicals generated by the irradiation and providing the low-molecular-weight polytetrafluoroethylene.

Method for producing low-molecular-weight polytetrafluoroethylene

A method for producing a paper, which includes applying at least one of ionizing radiation and plasma to at least one of a paper base and a compound (A) selected from: a compound having a carbon-carbon unsaturated bond and containing no fluorine atom in a molecular structure, and a compound containing no fluorine atom in a molecular structure in which radicals are generated by irradiation of an electron beam to the compound, to introduce a layer formed from the compound (A) on a surface of the paper base.

Method for producing paper

A molding material including a resin material that has a graft chain containing constituent units derived from a fluorine-containing compound and a non-fluorinated compound. The graft chain thereof may be formed, for example, using ionizing radiation.

Molding material and method for producing resin molded body using same

A resist patterning method according to the present invention includes: a resist layer forming step Sof forming a resist layer () on a substrate (); an activating step Sof activating the resist layer by irradiation with an activating energy beam; a decay inhibiting step Sof inhibiting decay of the activity of the resist layer; a latent pattern image forming step Sof forming a latent pattern image in the activated resist layer by irradiation with a latent image forming energy beam; and a developing step Sof developing the resist layer.

Resist patterning method, latent resist image forming device, resist patterning device, and resist material

A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A). 

Chemically amplified resist material, pattern-forming method, compound, and production method of compound

A resist-pattern-forming method comprises: patternwise exposing a predetermined region of a resist material film to a first radioactive ray that is ionizing radiation or nonionizing radiation; floodwise exposing the resist material film to a second radioactive ray that is nonionizing radiation; baking the resist material film; and developing the resist material film to form a resist pattern. The resist material film is made from a photosensitive resin composition comprising a chemically amplified resist material. The chemically amplified resist material comprises a base component that is capable of being made soluble or insoluble in a developer solution by an action of an acid and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. A van der Waals volume of the acid generated from the generative component is no less than 3.0&#xd7;10m.

Resist-pattern-forming method and chemically amplified resist material

A photosensitization chemical-amplification type resist material according to the present invention is used for a two-stage exposure lithography process, and contains (1) a developable base component and (2) a component generating a photosensitizer and an acid through exposure. Among three components consisting of (a) an acid-photosensitizer generator, (b) a photosensitizer precursor, and (c) a photoacid generator, the above component contains only the component (a), any two components, or all of the components (a) to (c).

Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting

A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

Substrate treatment system

A resist patterning method according to the present invention includes: a resist layer forming step Sof forming a resist layeron a substrate; an activating step Sof activating the resist layer by irradiation with an activating energy beam; a decay inhibiting step Sof inhibiting decay of the activity of the resist layer; a latent pattern image forming step Sof forming a latent pattern image in the activated resist layer by irradiation with a latent image forming energy beam; and a developing step Sof developing the resist layer.

A pattern-forming method comprises applying a chemically amplified resist material on an antireflective film formed on a substrate to form a resist material film. The resist material film is patternwise exposed to ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to nonionizing radiation having a wavelength greater than the nonionizing radiation for the patternwise exposing and greater than 200 nm. The resist material film floodwise exposed is baked. The resist material film baked is developed with a developer solution. An extinction coefficient of the antireflective film for the nonionizing radiation employed for the floodwise exposing is no less than 0.1. The chemically amplified resist material comprises a base component and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure.

Growing community of inventors

Suita, Japan

Akihiro Oshima