Hitachi Chemical Company, Ltd.

Akihiro Orita

Masato Yoshida

Takeshi Nojiri

Mitsunori Iwamuro

Shuichiro Adachi

Kaoru Okaniwa

Youichi Machii

Keiko Kizawa

Tetsuya Sato

Yoichi Machii

Shuuichirou Adachi

Tetsuya Satou

Toru Tanaka

Keiji Watanabe

Takashi Hattori

Yasushi Kurata

Hirotaka Hamamura

Masatoshi Morishita

Mieko Matsumura

Tooru Tanaka

Tsuyoshi Hayasaka

A composition for forming a passivation layer, comprising a compound represented by Formula (I): M(OR). In Formula (I), M comprises at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each Rindependently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5.

Composition for forming passivation layer, semiconductor substrate having passivation layer, method of producing semiconductor substrate having passivation layer, photovoltaic cell element, method of producing photovoltaic cell element and photovoltaic cell

The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.

Material for forming passivation film for semiconductor substrate, passivation film for semiconductor substrate and method of producing the same, and photovoltaic cell element and method of producing the same

The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second p-type diffusion layer forming composition which includes a p-type impurity-containing glass powder and a dispersion medium and in which a concentration of the p-type impurity is lower than that of the first p-type diffusion layer forming composition, where the first p-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first p-type diffusion layer forming composition and the second p-type diffusion layer forming composition are applied to form a p-type diffusion layer; and forming an electrode on the partial region.

Method for producing photovoltaic cell

The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second n-type diffusion layer forming composition which includes an n-type impurity-containing glass powder and a dispersion medium and in which a concentration of the n-type impurity is lower than that of the first n-type diffusion layer forming composition, where the first n-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first n-type diffusion layer forming composition and the second n-type diffusion layer forming composition are applied to form an n-type diffusion layer; and forming an electrode on the partial region.

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Tsukuba, Japan

Akihiro Orita