Sony Corporation

Mitsubishi Gas Chemical Company, Inc.

Pi R&d Co., Ltd.

Akihiro Nomoto

Hideki Ono

Akira Yumoto

Toshio Fukuda

Shinichi Ushikura

Shimpei Tsujikawa

Nobuhide Yoneya

Ryouichi Yasuda

Kazumasa Nomoto

Masashi Yano

Iwao Yagi

Noriyuki Kawashima

Mitsuru Nozaki

Eiji Nagata

Norikatsu Akiyama

The problem of the invention is to provide a resin composite electrolytic copper foil having further improved heat resistance and improved plate adhesion strength when plated after desmear treatment in the work process of an additive method. The solution is to form a roughened surface having a plurality of minute projections, a surface roughness (Rz) within a range of 1.0 pm to 3.0 pm and a lightness value of not more than 30 on one surface of an electrolytic copper foil (A), and form a layer of a resin composition (B) containing a block copolymerized polyimide resin (a) having a structure that imide oligomers of a first structural unit and a second structural unit are bonded alternately and repeatedly on the roughened surface.

Resin composite electrolytic copper foil, copper clad laminate and printed wiring board

A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode with an insulating layer in between; a pair of source-drain electrodes electrically connected to the semiconductor layer; and a contact layer provided in a moving path of carriers between each of the pair of source-drain electrodes and the semiconductor layer, the contact layer having end surfaces covered with the source-drain electrode.

Transistor, display, and electric apparatus

Thin-film transistors and techniques for forming thin-film transistors (TFT). In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT. The TFT comprises a body region comprising an organic semiconducting material and a protective layer contacting the body region and comprising an organic insulating material that, when a solution comprising the organic insulating material contacts the organic semiconducting material, causes the organic insulating material to phase separate with the organic semiconducting material.

Semiconductor device and electronic unit

Transistor, display, and electronic apparatus

In the condition where a nozzle for applying a coating liquid is disposed on the lower side of a substrate and a substrate surface controlled in wettability is faced down, the nozzle and the substrate are moved relative to each other, whereby the coating liquid is applied to a desired region of the substrate, and then the coating liquid is dried, to obtain a pattern included a dried coating layer.

Patterning method, method of manufacturing organic field effect transistor, and method of manufacturing flexible printed circuit board

A method for producing a semiconductor device includes the steps of forming an organic semiconductor layer on a substrate; forming a protective pattern on the organic semiconductor layer; and patterning the organic semiconductor layer by dissolving, in an organic solvent, or subliming the organic semiconductor layer using the protective pattern as a mask.

Method for producing semiconductor device

A method for manufacturing a semiconductor device is provided. The method includes the steps of: (1) coating a solution containing an organic semiconductor material on a water-repellent surface of a water-repellent stamp substrate; (2) drying the thus coated organic semiconductor material-containing solution on the water-repellent surface to crystallize the organic semiconductor material in contact with the water-repellent surface, thereby forming a semiconductor layer; (3) thermally treating the semiconductor layer formed on the stamp substrate; and (4) pressing the stamp substrate at a side, in which the thermally treated organic semiconductor layer is formed, against a surface of a substrate to be transferred so that the organic semiconductor layer is transferred to the surface of the substrate to be transferred.

Method for manufacturing semiconductor device

A thin film transistor capable of stably obtaining good performance is provided. The thin film transistor includes an organic semiconductor layer, and a protective layer and a source electrode and a drain electrode formed on the organic semiconductor layer. The protective layer is disposed at least in a region between the source electrode and the drain electrode.

Organic thin film transistor with a protective layer between source and drain electrodes and electronic device

A method of forming a pattern and a method of producing an electronic element with which a fine and precise pattern is stably formed are provided. Each of the method of forming a pattern and the method of producing an electronic element includes a step of forming an electrically conductive film D by applying a liquid composition onto a first plate; a step of forming an electrically conductive pattern D' on the first plateby pressing a second plateonto a surface side of the first plate, on which the electrically conductive film D is formed, to transfer an unwanted pattern of the electrically conductive film D to top faces of projectionsof the second plate, thereby removing the unwanted pattern; and a step of transferring the electrically conductive pattern D&#x2032; by pressing the surface side of the first plate, on which the electrically conductive pattern D&#x2032; is formed, onto a surface of a transfer-receiving substrate, wherein when a surface tension of the surface of the first plate, onto which the liquid composition is applied, is represented by &#x3b1;, a dynamic surface tension of the liquid composition at 100 msec measured by a maximum bubble pressure method is represented by &#x3b2;, and a surface tension of the top faces of the projectionsof the second plateis represented by &#x3b3;, the composition of the liquid composition or a material of the surface of the first plateor the second plateis set so as to satisfy &#x3b3;&#x3e;&#x3b1;&#x2267;&#x3b2;.

Method of forming pattern and method of producing electronic element

An intaglio printing plate includes a substrate and a photosensitive resin film provided on the substrate. The photosensitive resin film includes a plurality of concave patterns whose depths increase as aperture widths increase.

Intaglio printing plate, production method for intaglio printing plate, production method for electronic substrate, and production method for display device

A manufacturing method of a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, which includes the steps of pattern coating a gate electrode material on the gate insulating film by printing; and carrying out a heat treatment to form the gate electrode resulting from drying for solidification of the pattern coated gate electrode material.

Manufacturing method of thin film transistor and thin film transistor, and display

Disclosed herein is a semiconductor device which employs a thin-film transistor. In addition, the semiconductor device has a gate electrode, a gate insulation film, an organic semiconductor layer, a structure, a source electrode, a drain electrode, and an electrode material layer.

Growing community of inventors

Kanagawa, Japan

Akihiro Nomoto