Kabushiki Kaisha Toshiba

Kioxia Corporation

Toshiba Memory Corporation

Akihiro Nitayama

Hideaki Aochi

Masaru Kito

Ryota Katsumata

Hiroyasu Tanaka

Masaru Kidoh

Yoshiaki Fukuzumi

Katsuhiko Hieda

Yasuyuki Matsuoka

Fumio Horiguchi

Mitsuru Sato

Kazumasa Sunouchi

Takeshi Hamamoto

Hiroshi Takato

Takashi Yamada

Fujio Masuoka

Yoshiaki Asao

Satoshi Inoue

Koji Sakui

Yoshihisa Iwata

Takashi Ohsawa

Tohru Ozaki

Takehiro Hasegawa

Shigeyoshi Watanabe

Tsuneaki Fuse

Kiyotaro Itagaki

Tomoaki Shino

Naoko Okabe

Takashi Maeda

Megumi Ishiduki

Seiichi Aritome

Yosuke Komori

Keiji Hosotani

Toshiki Seshita

Ryo Fukuda

Atsushi Yagishita

Masami Aoki

Tomoo Hishida

Makoto Nakase

Hiroyoshi Tanimoto

Hitoshi Ito

Hirotsugu Wada

Hiroaki Yoda

Riichiro Shirota

Tatsuya Kishi

Masahiko Nakayama

Yusuke Kohyama

Takeshi Kajiyama

Nobutoshi Aoki

Masaki Kondo

Hisanori Aikawa

Toshiyuki Enda

Masaru Toko

Yoshihiro Minami

Shigeru Ishibashi

Kei Kurosawa

Naoki Kusunoki

Sanae Ito

Akira Sudo

Kouji Hashimoto

Naoko Takenouchi

Kazushi Tsuda

Kouji Hishimoto

Satosi Inoue

Kouji Hasimoto

A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile semiconductor memory device that has a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state.

Nonvolatile semiconductor memory device and manufacturing method thereof

Method for reading data of a first memory cell transistor of a nonvolatile semiconductor memory device

Method for writing data of a first memory cell transistor of a nonvolatile semiconductor memory device

Manufacturing method of a nonvolatile semiconductor memory device

A nonvolatile semiconductor memory device that has a new structure is provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device has a plurality of memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state.

According to one embodiment, a magnetoresistive element comprises a first magnetic layer having a magnetization direction invariable and perpendicular to a film surface, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer and having a magnetization direction variable and perpendicular to the film surface. The first magnetic layer includes an interface layer formed on an upper side in contact with a lower portion of the tunnel barrier layer, and a main body layer formed on a lower side and serving as an origin of perpendicular magnetic anisotropy. The interface layer includes a first area provided on an inner side and having magnetization, and a second area provided on an outer side to surround the first area and having magnetization smaller than the magnetization of the first area or no magnetization.

Magnetoresistive element and method of manufacturing the same

A non-volatile semiconductor storage device includes: a memory string including a plurality of memory cells connected in series; a first selection transistor having one end connected to one end of the memory string; a first wiring having one end connected to the other end of the first selection transistor; a second wiring connected to a gate of the first selection transistor. A control circuit is configured to boost voltages of the second wiring and the first wiring in the erase operation, while keeping the voltage of the first wiring greater than the voltage of the second wiring by a certain potential difference. The certain potential difference is a potential difference that causes a GIDL current.

Non-volatile semiconductor storage device having control circuit to control voltages to select transistor for erase operation

Nonvolatile semicondutor memory device and manufacturing method thereof

Each of the memory blocks includes: a first conductive layer expanding in parallel to the substrate over the first area, n layers of the first conductive layers being formed in a lamination direction and shared by the plurality of memory strings; a first semiconductor layer; and an electric charge accumulation layer. The memory strings are arranged with m columns in a second direction for each of the memory blocks. The wiring layers are arranged in the second direction, formed to extend to the vicinity of one end of the first conductive layer in the first direction from one side of the memory block, and connected via contact plugs to the first conductive layers. A relation represented by (Formula 1) is satisfied: (Formula 1) m&#x3e;=n

Non-volatile semiconductor storage device

A non-volatile semiconductor storage device has a memory string including a plurality of electrically rewritable memory cells connected in series. The non-volatile semiconductor storage device also has a protruding layer formed to protrude upward with respect to a substrate. The memory string includes: a plurality of first conductive layers laminated on the substrate; a first semiconductor layer formed to penetrate the plurality of first conductive layers; and an electric charge storage layer formed between the first conductive layers and the first semiconductor layer, and configured to be able to store electric charges. Each of the plurality of first conductive layers includes: a bottom portion extending in parallel to the substrate; and a side portion extending upward with respect to the substrate along the protruding layer at the bottom portion. The protruding layer has a width in a first direction parallel to the substrate that is less than or equal to its length in a lamination direction.

Non-volatile semiconductor storage device and method of manufacturing the same

A magnetic random access memory includes a magnetoresistive effect element which has a fixed layer, a recording layer and a non-magnetic layer provided between the fixed layer and the recording layer and in which the magnetization directions of the fixed layer and the recording layer are brought into a parallel state or an anti-parallel state in accordance with a direction of a current flowing between the fixed layer and the recording layer, a first contact which is connected to the recording layer and in which a contact area between the recording layer and the first contact is smaller than an area of the recording layer, and a cap layer which is provided between the first contact and the recording layer and which directly comes in contact with the first contact and which has a resistance higher than a resistance of the recording layer.

Magnetic random access memory and manufacturing method of the same

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Yokohama, Japan

Akihiro Nitayama