Adeka Corporation

Samsung Electronics Co., Ltd.

Mitsubishi Electric Corporation

Akihiro Nishida

Tomoharu Yoshino

Atsushi Yamashita

Atsushi Sakurai

Masaki Enzu

Masako Hatase

Akio Saito

Takashi Okazaki

Naoki Yamada

Hirokazu Taniguchi

Youn-Joung Cho

Yoshihiro Sumida

Tetsuya Yamashita

Makoto Okabe

Gyu-Hee Park

Tsubasa Shiratori

Haruyoshi Sato

Takanori Koide

Masato Yosomiya

Hiroyuki Uchiuzou

Sang-Chul Youn

Nana Okada

Yoshiki Ooe

Kazuhiko Shiraishi

Nana Sugiura

Provided is a method of producing a copper-containing layer, including: step 1: a step of reducing a surface of a substrate, provided that a substrate having a surface formed of a silicic acid compound is excluded, through use of a reducing agent; and step 2: a step of forming a copper-containing layer on the surface having been reduced in the step 1 through use of a thin-film forming raw material containing a copper compound by a plasma atomic layer deposition method.

Method of producing copper-containing layer

Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): where Rrepresents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, Rand Reach independently represent an alkyl group having 1 to 5 carbon atoms, and zrepresents an integer of from 1 to 3.

Raw material for forming thin film by atomic layer deposition method, method of producing thin film, and alkoxide compound

A raw material for forming a thin film, comprising a compound represented by General Formula (1) below.  wherein Rrepresents an isopropyl group, Rrepresents a methyl group, Rand Reach independently represent a linear or branched alkyl group havingtocarbon atoms, A represents a propane--diyl group and M represents copper, nickel, cobalt or manganese.

Compound, raw material for forming thin film, method for manufacturing thin film, and amidine compound

A method of the present invention for producing a metallic ruthenium thin film on a substrate by atomic layer deposition includes: (A) a step of introducing a feedstock gas containing a specific ruthenium compound into a treatment atmosphere, and allowing the ruthenium compound to deposit on the substrate; and a step of introducing a reactive gas containing a specific compound into the treatment atmosphere, and allowing the reactive gas to react with the specific ruthenium compound deposited on the substrate.

Method for producing metallic ruthenium thin film by atomic layer deposition

A method for producing an yttrium oxide-containing thin film by atomic layer deposition, the method comprising: a step for introducing a raw material gas containing tris(sec-butylcyclopentadienyl) yttrium into a treatment atmosphere in order to deposit tris(sec-butylcyclopentadienyl) yttrium on a substrate; and a step for introducing a reactive gas containing water vapor into the treatment atmosphere and causing the reactive gas to react with the tris(sec-butylcyclopentadienyl) yttrium that has been deposited on the substrate, thereby oxidizing yttrium is provided.

Method for producing yttrium oxide-containing thin film by atomic layer deposition

A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. (in the formula, Rrepresents a linear or branched alkyl group having 1 to 5 carbon atoms, Rrepresents hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms, Rand Reach independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents an alkanediyl group having 1 to 4 carbon atoms and M represents copper, iron, nickel, cobalt or manganese.).

A diazadienyl compound represented by General Formula (I) below: wherein Rrepresents a Clinear or branched alkyl group, and M represents nickel atom or manganese atom. In particular, since a compound in which Rin General Formula (I) is a methyl group has a high vapor pressure and a high thermal decomposition starting temperature, the compound is useful as a raw material for forming a thin film by a CVD method or ALD method.

Diazadienyl compound, raw material for forming thin film, and method for manufacturing thin film

A vanadium compound represented by following General Formula (1).  In General Formula (1), Rrepresents a linear or branched alkyl group having 1 to 7 carbon atoms and n represents a number from 2 to 4. Rpreferably represents a secondary alkyl or a tertiary alkyl. It is preferred that in General Formula (1), n is 2 and Ris tert-butyl group or tert-pentyl group, since the compound has a broad ALD window and high thermal decomposition temperature to be able to form a good quality vanadium-containing thin film that has a small carbon residue when used as an ALD material.

Vanadium compound

The present invention relates to an aluminum compound represented by general formula (I). The present invention also relates to a thin film-forming raw material that contains this aluminum compound. In general formula (I), Rand Reach independently denote a straight chain or branched alkyl group having 2-5 carbon atoms, and Rdenotes a methyl group or ethyl group. It is preferable for Rand Rto be ethyl groups. This compound has a low melting point, exhibits satisfactory volatility, has high thermal stability, and is suitable for use as a raw material used to form a thin film by a CVD method.

Method for producing a thin film

A novel compound represented by the general formula (I) or (II) below: [in the formula, each of Rand Rindependently represent a Chydrocarbon group, and Si(R)is optionally substituted for a hydrogen atom in the hydrocarbon group; however, Rand Rare different groups; Rrepresents a methyl or ethyl group; M represents a metal atom or silicon atom; and n is an integer from 1 to 4].

Compound, thin film-forming material, and thin film manufacturing method

This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), Rto Rindependently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that Rand Rare a methyl group, Rrepresents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that Ris a methyl group and Ris an ethyl group, Rrepresents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound. 

Copper compound, starting material for forming thin film, and method for manufacturing thin film

Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.

Nickel compound and method of forming thin film using the nickel compound

Disclosed is an aluminum compound of general formula (I) and a thin film forming material containing the aluminum compound. In formula (I), Rand Reach represent straight or branched C2-C5 alkyl, and Rrepresent methyl or ethyl. Rand Rare each preferably ethyl. The compound has a low melting temperature, sufficient volatility, and high thermal stability and is therefore suited for use as a material for thin film formation by CVD. 

Aluminum compound, thin-film forming raw material, and method for producing thin film

A method of forming a thin film including vaporizing a nickel compound on a substrate using a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and providing a vapor containing the vaporized nickel compound onto the substrate, thereby forming a nickel-containing layer. Vaporizing the nickel compound on the substrate is performed in an atmosphere in which at least one selected from plasma, heat, light, and voltage is applied.

Method of forming thin film using a heterostructured nickel compound

A ventilation and air conditioning apparatus for a vehicle includes: a ventilator that sucks air from outside the vehicle; an air conditioner that conditions air inside the vehicle; a duct for fresh outside air that connects the ventilator with the air conditioner so as to supply the air that the ventilator has sucked from outside the vehicle to the air conditioner; and a duct for conditioned air that supplies the conditioned air blown out from the air conditioner to inside the vehicle. The duct for fresh outside air is branched so as to be connected to the duct for conditioned air. With this configuration, even if the operation of the air conditioner is stopped due to, e.g., a leakage of a flammable refrigerant, an amount of ventilation can be secured in the vehicle.

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Tokyo, Japan

Akihiro Nishida