Fujikin Inc.

Other

Foundation for Advancement of International Science

Tohoku University

Tadahiro Ohmi

Daisho Denshi Co., Ltd.

Canon Kabushiki Kaisha

Sharp Kabushiki Kaisha Corporation

Tokyo Electron Limited

Kabushiki Kaisha Toyota Jidoshokki

Ibiden Company Limited

Zeon Corporation

Japan Scientific Engineering Co., Ltd.

Akihiro Morimoto

Nobukazu Ikeda

Yukio Minami

Michio Yamaji

Koji Kawada

Keiji Hirao

Kouji Kawada

Katunori Komehana

Teruo Honiden

Eiji Ideta

Touru Hirai

Yoshikazu Tanabe

Yasuyuki Shirai

Tsutomu Shinohara

Takashi Hirose

Masafumi Kitano

Toshirou Nariai

Masaharu Taguchi

Shigetoshi Sugawa

Kouji Nishino

Osamu Nakamura

Ryousuke Dohi

Atsushi Matsumoto

Jun Hirose

Kazuhiko Sugiyama

Hiroshi Koizumi

Tomio Uno

Satoshi Kagatsume

Ryosuke Dohi

Hiroyuki Fukuda

Hideki Nagaoka

Toyomi Uenoyama

Koji Nishino

Kenji Tubota

Katsunori Yonehana

Kazuo Fukazawa

Akinobu Teramoto

Kazuki Kobayashi

Hiroshi Morokoshi

Ikuo Sakono

Tetsutaro Ogushi

Takehisa Konishi

Akihiro Sato

Masahiro Sasaki

Kimiaki Fujino

Teruhiko Suzuki

Kazuhiro Yoshikawa

Ryo Enomoto

Yoshifumi Kato

Takahisa Nitta

Naoki Tanahashi

Toshiro Nariai

Hironori Matsumoto

Takeyoshi Kato

Fumiaki Nakamura

Toshio Nariai

Takumi Fujita

Akihiro Yukawa

Chobee Taguchi

A flex-rigid printed wiring board is provided which can retain flexibility of a flexible portion while increasing durability of the flexible portion against folding, and can ensure conduction in a rigid portion, and a method of manufacturing the printed wiring board. The flex-rigid printed wiring board includes a conductor layer provided on at least one face of a base film, one region of the wiring board containing the base film being a rigid region, an another region containing the base film being a flexible region. The average thickness 'tf' of the conductor layer on the base film formed in the flexible region and the average thickness 'tR' of the conductor layer on the base film formed in the rigid region satisfy the relationship of tf&#x3c;tR.

Flex-rigid printed wiring board and manufacturing method thereof

With respect to a vacuum tube having a reduced pressure vessel containing an electric discharge gas sealed therein, problems such as the lowering of discharge efficiency owing to an organic material, moisture or oxygen remaining in the reduced pressure vessel have taken place conventionally. It has been now found that the selection of the number of water molecules, the number of molecules of an organic gas and the number of oxygen molecules remaining in the reduced pressure vessel, in a relation with the number of molecules of a gas contributing the electric discharge allows the reduction of the adverse effect by the above-mentioned remaining gas. Specifically, the selection of the number of molecules of the above electric discharge gas being about ten times that of the above-mentioned remaining gas or more can reduce the adverse effect by the above-mentioned remaining gas.

Vacuum tube and vacuum tube manufacturing apparatus and method

The method for parallel operation of moisture generating reactors according to the present invention operates so that an orifice, provided with an orifice hole having a predetermined opening diameter, is disposed on a mixed-gas inlet side of each of a plurality of moisture generating reactors connected in parallel with each other, and mixed gas G consisting of hydrogen and oxygen is supplied from a mixer to each of the moisture generating reactors through each orifice, and the flows of moisture generated by the moisture generating reactors are combined, and the resulting combined moisture is supplied to an apparatus that uses high-purity water. Thus, a need to increase the amount of high-purity water supply is met by allowing a plurality of moisture generating reactors to perform a parallel water generating operation by branching off a mixed gas consisting of Hand Oby using a simple orifice construction.

Method for parallel operation of reactors that generate moisture

For the purpose of providing a semiconductor element built-in type multilayered circuit board in which a semiconductor element is closely joined to a recess of an insulating substrate to effectively disperse heat generated from the semiconductor element through the insulating substrate at a working temperature region of the semiconductor element circuit board, to surely conduct an electrical connection of an electronic part such as semiconductor element or the like in a short wiring and to enable the high density mounting of semiconductor elements, miniaturization and increase of working speed, there is proposed a semiconductor element built-in type multilayered circuit board formed by laminating a plurality of semiconductor element built-in type boards each comprising an insulating substrate and a semiconductor element accommodated in a recess formed therein, characterized in that a difference between a linear expansion coefficient of the insulating substrate and a linear expansion coefficient of the semiconductor element in a temperature zone of 20-300&#xb0; C. is less than 1&#xd7;10/K.

Multilayered circuit substrate with semiconductor device incorporated therein

As a substrate for a semiconductor device, a metal substrate is used, and the metal substrate is composed of a metal base body made of a first metal and a connecting metal layer made of a second metal for covering the metal base body. The substrate has a structure wherein a diffusion preventing layer for preventing diffusion of the first metal is provided on the connecting metal layer.

Semiconductor device with Cu metal-base and manufacturing method thereof

A multilayered circuit board which is provided with a low-permittivity interlayer insulating film, and which can significantly improve the performance such as signal transmission characteristics of the multilayered circuit board such as a package and a printed board, because the surface in contact with the interlayer insulating film of the circuit board has no unevenness to eliminate the lowering of production yield and the deterioration of high-frequency signal transmission characteristics; and electronic equipment using the circuit board. The multilayered circuit board comprises, mounted on a substrate, plural wiring layers and plural insulating layers positioned between the plural wiring layers, wherein at least part of the plural insulating layers are composed of a porous insulating layer containing at least any of materials selected from a porous material group consisting of porous material, aerogel, porous silica, porous polymer, hollow silica and hollow polymer, and a non-porous insulating layer formed on at least one surface of the porous insulating layer and not containing the porous material group.

Multilayer circuit board and electronic device

The object of the present invention is to form a chromium-oxide film, excellent in corrosion resistance, without containing an oxide film of other metal onto the metallic material. The chromium-oxide passivation film, excellent in corrosion resistance, without containing the oxide film of other metal can be formed inexpensively and in a short time, and a fluid supplying system for safely supplying fluid with hard corrosivity is able to be provided. One step of forming the passivation film consisting of a chromium oxide layer by giving heat treatment, in an oxidizing atmosphere, after coating chromium on the metallic material having a surface roughness (Ra) not more than 1.5 &#x3bc;m.

Metal material having formed thereon chromium oxide passive film and method for producing the same, and parts contacting with fluid and system for supplying fluid and exhausting gas

There is provided an active matrix display device including a flattening layer formed so as to surround a source electrode wiring, a drain electrode wiring, and a signal line, so that the source electrode wiring, the drain electrode wiring, and the signal line form substantially the same surface with the flattening layer.

Thin film transistor integrated circuit device, active matrix display device, and manufacturing methods of the same

A dielectric resonator antenna which emits an electric wave by having a dielectric body resonate is disclosed. A magnetic material is contained in the electric body, thereby increasing the relative permeability to more than 1 and lowering the relative permittivity. Consequently, the Q-value of the resonance can be lowered while maintaining the rate of wavelength shortening. With this technique, a broadband dielectric resonator antenna can be realized.

Antenna for portable terminal and portable terminal using same

The invention provides a valve and a method of operating the valve that makes it possible to reduce the diameter of the vacuum exhaustion pipings to make the facility for the vacuum exhaustion system small, which results in lower costs and shortens vacuum exhaustion time, and also which can prevent corrosion, cloggings, and seal leakages inside the piping system caused by the accumulation of substances produced by the decomposition of gas flowing through the pipings. In particular, in accordance with the present invention, an aluminum passivation is applied on the piping parts, i.e. the valve and others, that are used in the vacuum exhaustion system so as to inhibit gas decomposition caused by temperature rise at the time of baking so that components for reduction in the diameter size in the vacuum exhaustion system are provided. Thus, corrosion, cloggings and seat leakages caused by gas decomposition are prevented.

Valve for vacuum exhaustion system

The object of the present invention is to form a chromium-oxide film excellent in corrosion resistance without containing an oxide film of other metal onto the optional metallic material. The chromium-oxide passivation film excellent in corrosion resistance without containing the oxide film of other metal can be formed inexpensively and in a short time, and a fluid supplying system for supplying fluid hard in corrosivity in safety is able to be provided. This invention comprises a step of forming the passivation film consisting of a chromium oxide by giving heat treatment in an oxidizing atmosphere after coating chromium on metallic material of which surface roughness (Ra) of a coat surface is not more than 1.5 &#x3bc;m

An organic EL light emitting element is provided with a conductive transparent electrode, a counter electrodeopposing the conductive transparent electrode, an organic EL light emitting layerprovided between the conductive transparent electrodeand the counter electrode, an insulating protection layerprovided to cover at least the organic EL light emitting layer, and a heat dissipating layerwhich is brought into contact with the insulating protection layer. The conductive transparent electrode has an ITO film including at least one of Hf, V and Zr at least on the surface part on the side of the organic EL light emitting layer, and the insulating protection layerincludes a nitride film having a thickness of 100 nm or less.

Organic EL light emitting element, manufacturing method thereof, and display device

A reactor for generating moisture, with which hydrogen and oxygen fed into the reactor contact with a platinum coating catalyst layer to activate reactivity so that hydrogen and oxygen react under conditions of non-combustion, wherein the reactor includes a cooler comprising a heat dissipation body substrate in which a heater insertion hole is made in the center to fix to the outer surface of the reactor structural component on the outlet side and a cooler on the outlet side made up of a plural number of heat dissipation bodies installed vertically in parallel on the part excluding the area where the afore-mentioned heater insertion hole of the heat dissipation body substrate exists, and a part of the heater to heat the reactor is inserted in the heater insertion hole so as to fix to the outer surface of the reactor structural component on the outlet side.

Reactor for generating moisture and moisture generating and feeding apparatus for which the reactor is employed

A chip element according to this invention can reduce the influence of parasitic capacitance and parasitic inductance when used in a GHz band. A substrate is formed of a low permittivity material having a permittivity low enough to reduce parasitic capacitance in a GHz band. Parasitic capacitance inherent to the chip element is reduced.

Chip element

Growing community of inventors

Osaka, Japan

Akihiro Morimoto