Tokyo Electron Limited

Tokyo Electron Limi Ted

Akihiro Kubo

Taro Yamamoto

Yasushi Takiguchi

Teruhiko Kodama

Yoshiki Okamoto

Masahiro Fukuda

Hayato Hosaka

Masashi Enomoto

Kenji Yada

Ryuto Ozasa

Noboru Nakashima

Atsushi Ookouchi

Tetsuya Oda

Katsuhisa Fujii

Yuji Ariuchi

Shinsuke Kimura

Kenzi Yada

A substrate cleaning apparatus configured to clean a surface of a substrate having a circular shape by bringing a cleaning member into contact with the surface of the substrate and rotating the substrate and the cleaning member relatively is provided. A contact region of the cleaning member which comes into contact with the surface of the substrate is widened in a radial shape from a center side of the substrate toward a peripheral side thereof.

Substrate cleaning apparatus and substrate cleaning method

A substrate processing apparatus includes a polishing member having a polishing surface configured to perform a polishing of a main surface of a substrate; a first dressing member having a first dressing surface configured to perform a dressing of the polishing surface; a second dressing member having a second dressing surface configured to perform a dressing of the first dressing surface; a holding member configured to hold the polishing member and the second dressing member; and a driving unit configured to, by moving the holding member, switch a first state in which the first dressing surface and the polishing surface come into contact with each other to perform the dressing of the polishing surface and a second state in which the first dressing surface and the second dressing surface come into contact with each other to perform the dressing of the first dressing surface.

Substrate processing apparatus

A dressing apparatusincludes a bus memberwhich is equipped with a ceiling plateand a circular or polygonal cylindrical skirt portionprovided at a bottom surface of the ceiling plateand which is configured to accommodate a polishing padfrom thereabove. The bus memberincludes a dual fluid nozzleconfigured to jet a cleaning liquid and a gas onto a polishing surface of the polishing pad; a dress boardconfigured to come into contact with the polishing surface of the polishing pad; and a rinse nozzleconfigured to supply a rinse liquid onto a contact surface between the polishing surface of the polishing padand the dress board. A cleaning liquid, a fragment of a grindstone or a sludge is suppressed from being scattered around by the skirt portion

Dressing apparatus and dressing method for substrate rear surface polishing member

A substrate processing apparatus includes: a first holding part configured to hold a substrate; a second holding part configured to hold the substrate; a sliding member configured to rotate about a vertical axis so that the sliding member slides on a back surface of the substrate; a revolution mechanism configured to revolve the sliding member under rotation about a vertical revolution axis; and a relative movement mechanism configured to horizontally move a relative position between the substrate and a revolution trajectory of the sliding member so that when the substrate is held by the first holding part, the sliding member slides on a central portion of the back surface of the substrate, and when the substrate is held by the second holding part, the sliding member slides on the peripheral portion of the back surface of the substrate under rotation.

Substrate processing apparatus, substrate processing method and storage medium

There is disclosed a polishing cleaning mechanism configured to be in contact with a rear surface of a substrate which is held in a substrate holding unit for holding the rear surface of the substrate and perform a polishing process and a cleaning process on the rear surface of the substrate, including a cleaning member configured to clean the rear surface of the substrate, a polishing member configured to polish the rear surface of the substrate, and a support member configured to support the polishing member and the cleaning member to face the rear surface of the substrate held in the substrate holding unit, wherein a surface of the polishing member facing the substrate and a surface of the cleaning member facing the substrate differ in relative height from each other.

Polishing cleaning mechanism, substrate processing apparatus, and substrate processing method

There is provided a substrate processing method which includes polishing a rear surface of a substrate before a pattern exposure such that the rear surface is subjected to a roughening treatment; and bypassing a roughness alleviating treatment with respect to the polished rear surface of the substrate.

Substrate processing method and substrate processing apparatus

A substrate liquid treatment apparatus comprises a chuck () that holds and rotates a wafer, a back surface purging nozzle () that discharges a purge gas toward the back surface of the wafer, and a periphery purging nozzlethat discharges the purge gas onto the back surface of the wafer. The back surface purging nozzle has a slit-like opening part extending from a central side to a peripheral side of the substrate in a plan view. Vertical distance between the slit-like opening part and the substrate held by the substrate holding unit increases as approaching an end of the opening part on the central side of the substrate. The periphery purging nozzle discharges the purge gas, toward a central part of the substrate, toward a region on the back surface of the substrate, which region is located radially outside an end of the slit-like opening part of the back surface purging nozzle and radially inside an peripheral edge of the substrate.

Substrate liquid treatment apparatus and substrate liquid treatment method

In a heat treatment method in which a semiconductor wafer is carried into a heat treatment chamber constituted of a heat plate and a cover body covering the heat plate and processed, until the wafer is carried into the heat treatment chamber, an opening and closing operation of the cover body is performed to maintain the accumulated heat temperature of the heat treatment chamber at a prescribed processing temperature.

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Koshi, Japan

Akihiro Kubo