Nippon Sheet Glass Company, Limited

Avanstrate Inc.

Hoya Corporation

Mitsubishi Electric Corporation

Sony Corporation

Olympus Corporation

Fuji Electric Co., Ltd.

Komatsu Corporation

Threebond Co., Ltd.

Nippon Sheet Glass Do., Ltd.

Hitachi, Ltd.

Akihiro Koyama

Nobuyuki Yamamoto

Junji Kurachi

Shoichi Kishimoto

Satoshi Ami

Kosuke Fujiwara

Manabu Ichikawa

Yukihito Nagashima

Haruki Niida

Isamu Kuroda

Yoshihiro Matsuno

Hiroyuki Tanaka

Kazuishi Mitani

Yasunori Seto

Koichi Ataka

Yoichi Hachitani

Keiji Tsunetomo

Hiroshi Watanabe

Koji Sato

Yasuhiro Saito

Satoshi Furusawa

Kazuaki Hashimoto

Kohei Ebihara

Masahiro Hirata

Shinya Okamoto

Yasushi Nakamura

Hirotaka Koyo

Hiroaki Kasai

Tetsuro Yoshii

Tetsuo Takano

Takeshi Hidaka

Masamichi Hijino

Mikiko Hashimoto

Masayuki Takada

Koichiro Nakamura

Koji Yamada

Manabu Takei

Hidekazu Tsuchida

Shiro Hino

Koji Nakayama

Koji Fujita

Katsumi Watanabe

Takeshi Tawara

Hiromitsu Seto

Akira Fujisawa

Koichi Sakaguchi

Kazuya Konishi

Shigekazu Yoshii

Shinichiro Matsunaga

Yoshiyuki Yonezawa

Tetsunori Soga

Tomonori Mizushima

Shoyu Watanabe

Kensuke Taguchi

Shigehisa Yamamoto

Kotaro Kawahara

Yukiyasu Nakao

Yasunao Kuroda

Hidenori Koketsu

Kiminari Sugiura

Shinya Katayama

Masato Hyodo

Mitsuru Sometani

Kiyotaka Ninomiya

Shinsuke Tashiro

Kensuke Takenaka

Akira Hayashi

Yuji Kiuchi

Kouichi Murata

Yuji Fukuda

Keiji Kitamura

Jyunji Kurachi

Makoto Umino

Tsuyoshi Hashimoto

Mikiko Morishita

Akemi Nagae

A method for controlling a work vehicle including a pump driven by a power source, a cylinder controlling a displacement of the pump based on a pressure of supplied hydraulic fluid and switching a discharge direction of the hydraulic fluid from the pump based on a supply direction of the supplied hydraulic fluid, and a valve switching the supply direction of the hydraulic fluid to the cylinder, the method includes: detecting a vehicle speed of the work vehicle; receiving a command signal from a second operation device operated to switch between forward travel and reverse travel of the work vehicle; determining whether a shuttle shift operation is performed based on the vehicle speed and the command signal; and controlling the valve based on an operation amount of a first operation device operated by an operator to control the power source when the shuttle shift operation is determined to be performed.

Work vehicle and method for controlling work vehicle

A silicon carbide semiconductor device has an active region and a termination structure portion disposed outside of the active region. The silicon carbide semiconductor device includes a semiconductor substrate of a second conductivity type, a first semiconductor layer of the second conductivity type, a second semiconductor layer of a first conductivity type, first semiconductor regions of the second conductivity type, second semiconductor regions of the first conductivity type, a gate insulating film, a gate electrode, a first electrode, and a second electrode. During bipolar operation, a smaller density among an electron density and a hole density of an end of the second semiconductor layer in the termination structure portion is at most 1×10/cm.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

An object of the present invention is to provide a photocurable resin composition that can cope with application by screen printing and can be photocured in a short time. The present invention relates to a photocurable resin composition containing the following components (A) to (D):

Photocurable resin composition, sealing material for fuel cell, cured product thereof, fuel cell, and sealing method

A glass substrate that achieves a high strain point while having a low devitrification temperature; and a method for producing the glass substrate. This glass substrate for a display is made of a glass comprising SiOand AlO, comprising 0% or more to less than 4% BOin mass %, and substantially devoiding SbO, wherein 3&#xd7;BaO/(MgO+CaO+SrO) is 5 or less, MgO/(CaO+SrO) is 0.36 or greater, the devitrification temperature is 1235&#xb0; C. or lower, and the strain point is 700&#xb0; C. or higher. The method comprises: melting, by using at least direct electrical heating, a glass material prepared to have a predetermined composition; forming, into a flat glass sheet, the molten glass that has been melted in the melting step; and annealing the flat glass sheet, wherein a condition for cooling the flat glass sheet is controlled so as to reduce the heat shrinkage rate of the flat glass sheet.

Glass substrate for display and method for producing same

A semiconductor layer having n-type is made of silicon carbide, and has an element region and a terminal region. A plurality of field limiting ring regions having p-type are provided in the terminal region of the semiconductor layer, and are arranged spaced apart from one another. A field insulating film is provided in the terminal region of the semiconductor layer, and is in contact with the field limiting ring regions and the semiconductor layer. Each of the field limiting regions includes a halogen-containing field limiting ring part in contact with the field insulating film and containing halogen family atoms.

Silicon carbide semiconductor device having halogen field limiting ring regions and method of manufacturing same

An object of the present invention is to provide a silicon carbide semiconductor device with which the electric field at the time of switching is relaxed and the element withstand voltage can be enhanced. The distance between the outer peripheral end of a second surface electrode and the inner peripheral end of a field insulation film is smaller than the distance between an outer peripheral end of the second surface electrode and an inner peripheral end of the field insulation film in the case where the electric field strength applied to the outer peripheral lower end of the second surface electrode is calculated so as to become equal to the smallest dielectric breakdown strength among the dielectric breakdown strength of the field insulation film and the dielectric breakdown strength of the surface protective film at the time of switching when the value of dV/dt is greater than or equal to 10 kV/&#x3bc;s.

Silicon carbide semiconductor device

The present invention provides a method for manufacturing silicon carbide semiconductor apparatus including a testing step of testing a PN diode for the presence or absence of stacking faults in a relatively short time and an energization test apparatus. The present invention sets the temperature of a bipolar semiconductor element at 150&#xb0; C. or higher and 230&#xb0; C. or lower, causes a forward current having a current density of 120 [A/cm] or more and 400 [A/cm] or less to continuously flow through the bipolar semiconductor element, calculates, in a case where a forward resistance of the bipolar semiconductor element through which the forward current flows reaches a saturation state, the degree of change in the forward resistance, and determines whether the calculated degree of change is smaller than a threshold value.

Method for manufacturing silicon carbide semiconductor apparatus, and energization test apparatus

A substrate for p-Si TFT flat panel displays made of a glass having a high low-temperature-viscosity characteristic temperature and manufactured while avoiding erosion/wear of a melting tank during melting through direct electrical heating. The glass substrate comprises 52-78 mass % of SiO, 3-25 mass % of AlO, 3-15 mass % of BO, 3-20 mass % of RO, wherein RO is total amount of MgO, CaO, SrO, and BaO, 0.01-0.8 mass % of RO, wherein RO is total amount of LiO, NaO, and KO, and 0-0.3 mass % of SbO, and substantially does not comprise AsO, wherein the mass ratio CaO/RO is equal to or greater than 0.65, the mass ratio (SiO+AlO)/BOis in a range of 7-30, and the mass ratio (SiO+AlO)/RO is equal to or greater than 5. A related method involves melting glass raw materials blended to provide the glass composition; a forming step of forming the molten glass into a flat-plate glass; and an annealing step of annealing the flat-plate glass.

Glass substrate for flat panel display and method for manufacturing same

A flat panel display glass substrate according to the present invention includes a glass comprising, as expressed in mol %, 55-80% SiO, 3-20% AlO, 3-15% BO, 3-25% RO (the total amount of MgO, CaO, SrO, and BaO), and substantially no AsO, and SbO. The devitrification temperature of the glass is 1250&#xb0; C. or less. The glass substrate has a heat shrinkage rate of 75 ppm or less. The heat shrinkage rate is calculated from the amount of shrinkage of the glass substrate measured after a heat treatment which is performed at a temperature rising and falling rate of 10&#xb0; C./min and at 550&#xb0; C. for 2 hours by the heat shrinkage rate (ppm)={the amount of shrinkage of the glass substrate after the heat treatment/the length of the glass substrate before the heat treatment}&#xd7;10.

Glass substrate for flat panel display and manufacturing method thereof

The disclosed cover glass is produced by etching a glass substrate that has been formed by a down-drawing process, and chemically strengthening the glass substrate to provide the glass substrate with a compressive-stress layer on the principal surfaces thereof. The glass substrate contains, as components thereof, 50% to 70% by mass of SiO, 5% to 20% by mass of AlO, 6% to 30% by mass of NaO, and 0% to less than 8% by mass of LiO. The glass substrate may also contain 0% to 2.6% by mass of CaO, if necessary. The glass substrate has an etching characteristic in which the etching rate is at least 3.7 &#x3bc;m/minute in an etching environment having a temperature of 22&#xb0; C. and containing hydrogen fluoride with a concentration of 10% by mass.

Cover glass and method for producing cover glass

A glass substrate for p-Si TFT flat panel displays that is composed of a glass comprising 52-78 mass % of SiO, 3-25 mass % of AlO, 3-15 mass % of BO, 3-25 mass % of RO, wherein RO is total amount of MgO, CaO, SrO, and BaO, 0.01-1 mass % of FeO, and 0-0.3 mass % of SbO, and substantially not comprising AsO, the glass having a mass ratio (SiO+AlO)/BOin a range of 7-30 and a mass ratio (SiO+AlO)/RO equal to or greater than 6. A method for manufacturing a glass substrate involves: a melting step of obtaining a molten glass by melting, by employing at least direct electrical heating, glass raw materials blended so as to provide the aforementioned glass composition; a forming step of forming the molten glass into a flat-plate glass; and an annealing step of annealing the flat-plate glass.

Provided is a glass composition suitable for a glass substrate for a flat panel display such as a liquid crystal display. This glass composition has high thermal stability, and is substantially free of BaO but has a low devitrification temperature. It is suitable for the production of a glass substrate by a downdraw process. This glass composition contains, in terms of mass %: 54 to 62% of SiO; 4 to 11% of BO; 15 to 20% of AlO; 2 to 5% of MgO; 0 to 7% of CaO; 0 to 13.5% of SrO; 0 to 1% of KO; 0 to 1% of SnO; and 0 to 0.2% of FeO, and is substantially free of BaO. In this glass composition, the total content of alkaline earth metal oxides (MgO+CaO +SrO) is 10 to 18.5 mass %. The devitrification temperature of the glass composition is 1200&#xb0; C. or lower.

Glass composition, glass substrate for flat panel display using the same, flat panel display, and method for producing glass substrate for flat panel display

A glass flake () having improved heat resistance and chemical resistance is formed from a glass base material satisfying, in mass %, 60&#x2266;SiO&#x2266;75, 5&#x3c;AlO&#x2266;15, 3&#x2266;CaO&#x2266;20, 6&#x2266;NaO&#x2266;20 and 9&#x2266;(LiO+NaO+KO)&#x2266;13. When 9&#x2266;(LiO+NaO+KO)&#x2266;13 is satisfied in mass %, the CaO content and the NaO content are preferably set within the ranges of 5&#x2266;CaO&#x2266;20 and 6&#x2266;NaO&#x2266;13, respectively. When 13&#x2266;(LiO+NaO+KO)&#x2266;20 is satisfied in mass %, the CaO content and the Na2O content are preferably set within the ranges of 3&#x2266;CaO&#x2266;15 and 9&#x2266;NaO&#x2266;20, respectively. The working temperature of the glass base material is preferably 1180&#xb0; C.-1300&#xb0; C. The temperature difference AT obtained by taking the devitrification temperature of the glass base material from the working temperature of the glass base material is preferably 0&#xb0; C.-200&#xb0; C. The glass transition temperature of the glass base material is preferably 550&#xb0; C.-700&#xb0; C. The acid resistance index &#x394;W of the glass base material is preferably 0.05-1.5 mass %.

Glass flake and coated glass flake

Disclosed is a glass flake () having improved heat resistance and improved chemical durability, which is composed of a glass base material satisfying, as expressed in mass %, 60&#x2266;SiO&#x2266;70, 5&#x2266;AlO&#x2266;15, 1&#x2266;MgO&#x2266;10, 10&#x2266;CaO&#x2266;25 and 4&#x3c;(LiO+NaO+KO)&#x3c;9. The temperature difference &#x394;T obtained by taking the devitrification temperature of the glass base material from the working temperature thereof is preferably within the range of 0-200&#xb0; C. The glass transition temperature of the glass base material is preferably within the range of 560-750&#xb0; C. It is desirable that the value of &#x394;W, which serves as an index for the acid resistance of the glass base material, is within the range of 0.05-1.2 mass %.

A flat panel display glass substrate includes a glass comprising, in mol %, 55-80% SiO, 3-20% AlO, 3-15% BO, and 3-25% RO (the total amount of MgO, CaO, SrO, and BaO). The contents in mol % of SiO, AlO, and BOsatisfy a relationship (SiO+AlO)/(BO)=7.5-17. The strain point of the glass is 665&#xb0; C. or more. The devitrification temperature of the glass is 1250&#xb0; C. or less. The substrate has a heat shrinkage rate of 75 ppm or less. The rate of heat shrinkage is calculated from the amount of shrinkage of the substrate measured after a heat treatment which is performed at a rising and falling temperature rate of 10&#xb0; C./min and at 550&#xb0; C. for 2 hours by the rate of heat shrinkage (ppm)={the amount of shrinkage of the substrate after the heat treatment/the length of the substrate before the heat treatment}&#xd7;10.

Growing community of inventors

Tokyo, Japan

Akihiro Koyama