Mitsubishi Denki Kabushiki Kaisha

Akihiro Kondo

Masaharu Hama

Saburo Takamiya

Kazuhisa Takahashi

Takashi Ishii

An SiO.sub.2 film doped with an impurity is formed on at least one portion of a surface of a semiconductor wafer. The wafer is selectively etched after a protective film for selective etching is disposed into a predetermined pattern on the SiO.sub.2 film. The impurity included in the SiO.sub.2 film can be diffused into the wafer to form a PN junction in the latter. Then the wafer is selectively etched until that surface of the wafer to which the PN junction is exposed is bevelled.

Process of producing semiconductor device

A method of forming a second semiconductor layer on a first semiconductor layer by vapor growth is disclosed. The two semiconductor layers are of the same conduction type but have different impurity concentrations. In the forming process, a doping gas is supplied before the vapor growth of the second semiconductor layer is started whereby a steep impurity distribution is established in the vapor-growth boundary.

Growing community of inventors

Amagasaki, Japan

Akihiro Kondo