Kabushiki Kaisha Toshiba

Ckd Corporation

Sony Corporation

Alpad Corporation

Zeon Corporation

Other

Hitachi, Ltd.

Mitsubishi Heavy Industries Limited

Kabushiki Kaisha Meiji Gomu Kasei

Ryosei Electro-circuit Systems, Ltd.

Samsung Electronics Co., Ltd.

Akihiro Kojima

Yoshiaki Sugizaki

Yosuke Akimoto

Hideto Furuyama

Miyoko Shimada

Hideyuki Tomizawa

Susumu Obata

Hideo Tamura

Kazuhito Higuchi

Masayuki Ishikawa

Hideki Shibata

Hiroshi Hamasaki

Takayoshi Fujii

Hideaki Fukuzawa

Yoshihiko Fuji

Michiko Hara

Tatsuya Ohguro

Akio Hori

Kazuo Shimokawa

Hisataka Hayashi

Tokuhisa Ohiwa

Katsuya Okumura

Hideshi Miyajima

Kiyoshige Kojima

Hiroshi Tanaka

Shinichi Ito

Ichiro Mizushima

Akira Nakamura

Yoshikazu Tanaka

Shinya Ito

Nobuo Hayasaka

Akira Fujimoto

Takuya Hirata

Tatsuya Tsujiuchi

Shinya Arai

Hiroshi Koizumi

Tomohiro Saito

Tetsuro Komatsu

Tomomichi Naka

Akiya Kimura

Yasuhide Okada

Miyuki Izuka

Miyuki Shimojuku

Yoshiaki Shimooka

Mariko Takayanagi

Hideo Nishiuchi

Masanobu Ando

Toshiya Nakayama

Mitsuyoshi Endo

Akio Ui

Hideko Mukaida

Akihiko Yoshiwara

Gen Watari

Naoya Ushiyama

Eiji Hayashi

Hiroaki Yamazaki

Tsuyoshi Oishi

Katsuhisa Ito

Hiromitsu Nagayasu

Kazuyoshi Furukawa

Rempei Nakata

Toshiyuki Terada

Kazuhiro Tomioka

Ryoichi Inanami

Naoaki Sakurai

Kinji Yamada

Tsukasa Azuma

Shinji Nunotani

Hiroshi Itafuji

Izushi Kobayashi

Atsushi Shiota

Yumi Hayashi

Shoji Seta

Itsuko Sakai

Ryuji Yoshiyama

Takahiko Kurosawa

Nobuhide Yamada

Yukifumi Machida

Takashi Ichikawa

Nozomu Takahashi

Kentaro Kobayashi

Hidefumi Yasuda

Yukihiro Nomura

Naoki Tamaoki

Hideo Shiozawa

Haruo Amada

Koji Saita

Keiji Fujikawa

Hiroko Miki

Masahiro Uekita

Tatsuhito Aoyama

Toyoshi Nakagawa

Hisashi Ito

Kenichi Goshima

Shuji Itonaga

Michiyasu Watanabe

Yuichiro Sato

Hiroshi Kagohashi

In one embodiment, a gas sensor includes a sensing layer having a first region containing PdCuSi, and a second region which is provided outside the first region and contains PdCu.

Gas sensor

Provided is a conductor film obtainable using a carbon nanotube dispersion liquid. The carbon nanotube dispersion liquid contains carbon nanotubes (A), a polymeric dispersant (B) including a sulfonic acid group-containing monomeric unit and an ethylenically unsaturated aliphatic carboxylic acid monomeric unit, and a solvent (C). Percentage content of the ethylenically unsaturated aliphatic carboxylic acid monomeric unit in the polymeric dispersant (B) is greater than 20 mol % and no greater than 90 mol %.

Conductor film, and conductive film

Provided is a carbon nanotube dispersion liquid that has excellent stability and that can be used to form a conductor film that exhibits excellent adhesiveness to a substrate. The carbon nanotube dispersion liquid contains carbon nanotubes (A), a polymeric dispersant (B) including a sulfonic acid group-containing monomeric unit and an ethylenically unsaturated aliphatic carboxylic acid monomeric unit, and a solvent (C). Percentage content of the ethylenically unsaturated aliphatic carboxylic acid monomeric unit in the polymeric dispersant (B) is greater than 20 mol % and no greater than 90 mol %.

Carbon nanotube dispersion liquid, conductor film, and conductive film

According to one embodiment, the p-side electrode is provided on the second semiconductor layer. The insulating film is provided on the p-side electrode. The n-side electrode includes a first portion, a second portion, and a third portion. The first portion is provided on a side face of the first semiconductor layer. The second portion is provided in the first n-side region. The third portion overlaps the p-side electrode via the insulating film and connects the first portion and the second portion to each other.

Semiconductor light-emitting device

The semiconductor layer has a first surface, a second surface provided on opposite side from the first surface, and a third surface provided on the opposite side from the first surface with a step difference with respect to the second surface. The semiconductor layer includes a light emitting layer between the first surface and the third surface. The first electrode is in contact with the second surface. The second electrode is provided in a plane of the third surface. The second electrode includes a contact part in contact with the third surface and an end part not in contact with the third surface. The second electrode contains silver. The insulating film is provided between the end part of the second electrode and the third surface. A semiconductor light emitting device having a high light extraction efficiency is provided.

Semiconductor light emitting device

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first metal pillar, a second metal pillar, and an insulating layer. The semiconductor layer includes a first surface, a second surface, and a light emitting layer. The first metal pillar is electrically connected to the second surface. The first metal pillar includes first and second metal layers. The first metal layer is provided between the second surface and at least a part of the second metal layer. The second metal pillar is arranged side by side with the first metal pillar, and electrically connected to the second surface. The second metal pillar includes third and fourth metal layers. The third metal layer is provided between the second surface and at least a part of the fourth metal layer. The insulating layer is provided between the first and second metal pillars.

One of embodiments is a semiconductor micro-analysis chip for detecting particles in a sample liquid. The chip comprises a semiconductor substrate, a first flow channel provided on the semiconductor substrate to allow the sample liquid to flow therein, a second flow channel provided at a different position from the first flow channel of the semiconductor substrate to allow the sample liquid or an electrolyte solution to flow therein, a contact portion where a portion of the first flow channel and a portion of the second flow channel abut each other or intersect one another with a partition being arranged between the flow channels, and a fine hole provided on the partition of the contact portion to allow the particles to pass therethrough.

Semiconductor micro-analysis chip and method of manufacturing the same

According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.

Strain and pressure sensing device, microphone, method for manufacturing strain and pressure sensing device, and method for manufacturing microphone

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a sealing member configured to cover a lower surface of the semiconductor layer and a side surface of the semiconductor layer to protrude to be higher than an upper surface of the semiconductor layer at a side of the semiconductor layer, a fluorescer layer provided above the semiconductor layer and the sealing member, and an insulating film provided between the sealing member and the semiconductor layer and between the sealing member and the fluorescer layer. A corner of a protruding portion of the sealing member is rounded.

Semiconductor light emitting device and method for manufacturing same

According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a light emitting layer; and a phosphor layer provided on the semiconductor layer. The phosphor layer includes a plurality of phosphors, &#x2212;0.05&#x3c;A&#xd7;(AR)+B&#xd7;(Np)+C&#x3c;0.05 being satisfied for &#x2212;0.149055&#x2212;(3&#xd7;0.011797)&#x2266;constant A&#x2266;&#x2212;0.149055+(3&#xd7;0.011797), &#x2212;0.000192&#x2212;(3&#xd7;0.00002461)&#x2266;constant B&#x2266;&#x2212;0.000192+(3&#xd7;0.00002461), and 0.0818492&#x2212;(3&#xd7;0.005708)&#x2266;constant C&#x2266;0.0818492+(3&#xd7;0.005708). AR is a ratio of a thickness of the phosphor layer to a width of the phosphor layer, and Np is a number of the plurality of phosphors.

According to one embodiment, the n-side electrode has a corner and a plurality of straight portions. The plurality of straight portions extends in different directions. The corner connects the plurality of straight portions. A first insulating film is provided between the semiconductor layer and the corner of the n-side electrode. The corner is not in contact with the semiconductor layer. The straight portions of the n-side electrode are in contact with the semiconductor layer.

According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface; a p-side electrode; an n-side electrode; a first p-side pillar; a first n-side pillar; a first insulating layer; a fluorescer layer; a second insulating layer; a p-side interconnect; and an n-side interconnect. The second insulating layer is provided as one body in at least a portion of an outer side of a side surface of the first insulating layer and at least a portion of an outer side of a side surface of the fluorescer layer.

Growing community of inventors

Kanagawa-ken, Japan

Akihiro Kojima