Showa Denko K.k.

Showa Denko Kabushiki Kaisha

Akihiro Kitazaki

Eiji Kambara

Takeshi Nakamura

Yuta Hirano

Atsushi Yoshinaga

Junichi Yamamoto

A method for producing an electrically conductive paste, including a step of manufacturing paste A by exerting a cavitation effect in mixed liquid A containing multi-walled carbon nanotubes and a solvent, a step of manufacturing paste B from mixed liquid B containing carbon black particles, graphitized carbon nanofibers and a solvent, and a step of mixing paste A and paste B.

Method for manufacturing electroconductive paste, and electroconductive paste

A catalyst for producing a carbon nanofiber is obtained by dissolving or dispersing [I] a compound containing Fe element; [II] a compound containing Co element; [III] a compound containing at least one element selected from the group consisting of Ti, V, Cr, and Mn; and [IV] a compound containing at least one element selected from the group consisting of W and Mo in a solvent to obtain a solution or the fluid dispersion, and then impregnating a particulate carrier with the solution or the fluid dispersion. A carbon nanofiber is obtained by bringing a carbon element-containing compound into contact with the catalyst in a vapor phase at a temperature of 300 degrees C. to 500 degrees C.

Carbon nanofiber, producing method and use of the same

A method for producing a carbon fiber, comprising a step of dissolving or dispersing [I] a compound containing Co element; [II] a compound containing at least one element selected from the group consisting of Ti, V, Cr, and Mn; and [III] a compound containing at least one element selected from the group consisting of W and Mo in a solvent to obtain a solution or a fluid dispersion, a step of impregnating a particulate carrier with the solution or the fluid dispersion to prepare a catalyst, and a step of bringing a carbon source into contact with the catalyst in a vapor phase.

Method for producing carbon fiber

The present invention provides an epitaxial wafer which is obtained by sequentially forming, on an n-type GaAs substrate, a first n-type GaAlAs layer; a second n-type GaAlAs layer; an n-type GaAlAs cladding layer; a p-type GaAlAs active layer which has an emission wavelength of 850-900 nm; and a p-type GaAlAs cladding layer, through liquid phase epitaxy, and, subsequently, removing the n-type GaAs substrate. In the epitaxial wafer, the p-type GaAlAs cladding layer has a thickness of 5-30 &mgr;m; the p-type GaAlAs cladding layer has an oxygen concentration of 3&times;10 atoms/cm or less; the p-type GaAlAs cladding layer has a carrier concentration of 1&times;10 cm to 1&times;10 cm ; the p-type GaAlAs active layer has a thickness of 0.05-0.4 &mgr;m; the peak carbon concentration of the portion in the second n-type GaAlAs layer within 2 &mgr;m of the interface between the second n-type GaAlAs layer and the first n-type GaAlAs layer is less than 1&times;10 atoms/cm ; the p-type GaAlAs active layer contains germanium as a predominant dopant; the n-type GaAlAs cladding layer has a Ge concentration of 3&times;10 atoms/cm or less; and the second n-type GaAlAs layer has a Ge concentration of 3&times;10 atoms/cm or less. The invention provides an epitaxial wafer of double-hetero structure for producing high-intensity GaAlAs infrared LEDs.

Growing community of inventors

Kawasaki, Japan

Akihiro Kitazaki