Rohm Co., Ltd.

Nidec Corporation

Akihiro Kimura

Takeshi Sunaga

Kunio Sakurada

Teiichi Hirono

Kyoko Horise

Akihiro Koga

Shouji Yasunaga

Tsunemori Yamaguchi

Akinobu Sumiji

Kenji Fujii

Motoharu Haga

Yasumasa Kasuya

Tomohiro Yoneda

Tomotsugu Sugiyama

Yoshihisa Tsukamoto

Tomohiro Hasegawa

Toichi Nagahara

Shingo Yoshida

Shinichiro Noda

Yoshiharu Ikegami

Masafumi Fujimoto

Ryota Ogino

Takehito Tamaoka

Yoichi Sekii

Kazuhiro Sato

Hiroyoshi Teshima

Masaaki Matsuo

Masashi Hirayama

Kaito Inoue

Daisuke Fukuoka

Akihisa Moriguchi

A semiconductor device is provided with a semiconductor element having a plurality of electrodes, a plurality of terminals electrically connected to the plurality of electrodes, and a sealing resin covering the semiconductor element. The sealing resin covers the plurality of terminals such that a bottom surface of the semiconductor element in a thickness direction is exposed. A first terminal, which is one of the plurality of terminals, is disposed in a position that overlaps a first electrode, which is one of the plurality of electrodes, when viewed in the thickness direction. The semiconductor device is provided with a conductive connection member that contacts both the first terminal and the first electrode.

Semiconductor device and method for manufacturing the same

The semiconductor device Aincludes a support member, a metal parthaving obverse and reverse surfaces-spaced in z direction, with the reverse surfacebonded to the support member, a second bonding layerboding the support memberand the metal part, a semiconductor elementfacing the obverse surfaceand bonded to the metal part, and a sealing membercovering the support member, metal part, second bonding layerand semiconductor element. The metal partincludes a first bodyof a first material and a second bodyof a second material, with a boundary between the bodies-. The second material has a linear thermal expansion coefficient smaller than that of the first material. The semiconductor device is improved in reliability by reducing thermal stress from heat generation of the semiconductor element.

Semiconductor device

A semiconductor device includes a plurality of die pad sections, a plurality of semiconductor chips, each of which is arranged in each of the die pad sections, a resin encapsulation portion having a recess portion for exposing at least a portion of the die pad sections, the resin encapsulation portion configured to cover the die pad sections and the semiconductor chips, and a heat radiation layer arranged in the recess portion. The heat radiation layer includes an elastic layer exposed toward a direction in which the recess portion is opened. The heat radiation layer directly faces at least a portion of the die pad sections. The elastic layer overlaps with at least a portion of the die pad sections when seen in a thickness direction of the heat radiation layer.

Semiconductor module

Semiconductor device and method for manufacturing semiconductor device

A method includes the steps of: preparing a lead frame including a plurality of die pads, and preparing a plurality of semiconductor chips; disposing each of the semiconductor chips on a respective one of the die pads; forming a sealing resin to cover the die pads and the semiconductor chips; and attaching a heat dissipation plate to the die pads by pressing the heat dissipation plate against the die pads via a resin sheet which is an adhesive layer after the sealing resin is formed.

Semiconductor device and method for manufacturing semiconductor device to prevent separation of terminals

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

Growing community of inventors

Kyoto, Japan

Akihiro Kimura