Mitsui Minings & Melting Co., Ltd.

Akihiro Kanno

Naohiko Abe

Katsuhiko Hayashi

Akiko Sugioka

Yuichi Senoo

Takahiro Kogawa

Hirotake Nakashima

Junki Tomita

Provided is a beta zeolite satisfying P>76.79Q−29.514 in a range in which Q is less than 0.4011 nm, wherein, P represents an AB value that is an intensity ratio of A to B, A represents a diffraction intensity of a main peak of the beta zeolite observed by X-ray diffraction measurement, B represents a diffraction intensity of the (116) plane of α-alumina obtained by X-ray diffraction measurement under the same conditions as those for the X-ray diffraction measurement on the beta zeolite, the α-alumina being the standard substance 674a distributed by the American National Institute of Standards and Technology, and Q represents a lattice interplanar spacing of the main peak of the beta zeolite observed by X-ray diffraction measurement. It is preferable that the formula (1) above is satisfied in a range in which Q is from 0.3940 to 0.4000 nm.

Beta-type zeolite and catalyst containing same

An object of the present invention is to provide a material for forming a capacitor layer comprising a dielectric layer formed by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method. The material can reduce a leakage current of a capacitor circuit. In order to achieve the object, a material for forming a capacitor layer comprising a dielectric layer between a first conductive layer to be used for forming a top electrode and a second conductive layer to be used for forming a bottom electrode, characterized in that the dielectric layer is a dielectric oxide film formed by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method; and particles constituting the dielectric oxide film are impregnated with a resin component is employed. In addition, a manufacturing method characterized in that the dielectric oxide film is formed on the surface of a material to be the bottom electrode by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method; a resin varnish is impregnated into a surface of the dielectric oxide film; the resin is dried and cured to form the dielectric layer; and then a top electrode constituting layer is provided on the dielectric layer is employed.

Material for forming capacitor layer and method for manufacturing the material for forming capacitor layer

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Ageo, Japan

Akihiro Kanno