Matsushita Electric Industrial Co., Ltd.

Akihiro Kanaboshi

Kazuo Eda

Yutaka Taguchi

Yoshihiro Tomita

Tetsuyoshi Ogura

Masato Sugimoto

A surface acoustic wave device is manufactured by directly or indirectly bonding a lid to a substrate having a surface acoustic wave element to seal the element under the lid. The lid is made of at least one material selected from the group comprising lithium niobate, lithium tantalete, lithium borate, glass and quartz. The substrate is made of at least one material selected from the group comprising quartz, lithium niobate, lithium tantalete and lithium borate.

Surface acoustic wave device and method of manufacturing the same

An electronic component of the present invention includes a first substrate, a second substrate, a first conductive layer constituting a terminal electrode on a first surface of the first substrate, and a first insulating layer formed on the first conductive layer, wherein the first insulating layer and the second substrate are directly bonded to each other by at least one bond selected from the group consisting of a hydrogen bond and a covalent bond.

Electronic component and method for producing the same

An electronic component includes a first substrate and a second substrate. A first conductive layer constituting a terminal electrode is formed on a first surface of the first substrate. A first insulating layer is formed on the first conductive layer. The first insulating layer and the second substrate are directly bonded to each other by at least one bond selected from the group consisting of a hydrogen bond and a covalent bond.

Method for producing an electronic component using direct bonding

Integrated circuits utilizing piezoelectric elements can be advantageously constructed by bonding elements together via direct bonds. Such integrated circuits include an electro-acoustic hybrid integrated circuit such as a voltage controlled oscillator wherein a semiconductor substrate having an active element is bonded through direct bonding to a surface acoustic wave resonator or a quartz oscillator as an electro-acoustic element. A quartz device can also be provided which includes a quartz plate, excitation electrodes on opposite surfaces, and a holding member made of a material having a thermal expansion coefficient substantially equal to that of the quartz plate. The holding member is connected to the quartz plate by direct bonding without using any adhesives. Because the thermal expansion coefficients of the quartz plate and the holding member are equal, no thermal stress occurs in the bonding area. As a result, virtually no stress is applied to the quartz plate and the frequency-temperature characteristic can be improved. A piezoelectric filter according to the invention includes an oscillatory piezoelectric plate made of quartz, lithium tantalate, lithium niobate or lithium borate and having an oscillatory portion; a glass plate to which the piezoelectric plate is directly bonded; and first and second oscillatory electrode members which are provided on opposite faces of the oscillatory portion, respectively, such that at least one of the oscillatory electrode members is divided into a plurality of counter electrodes.

Electronic components having high-frequency elements and methods of

A piezoelectric acoustic wave device includes a substrate and a piezoelectric plate. The piezoelectric plate includes a resonating part, and has a top electrode at least on the top surface of the resonating part. The substrate and the piezoelectric plate are directly bonded at an area where they are in contact with each other by a chemical bond such as a covalent bond and an ionic bond. A depression is formed in at least one of the substrate and the piezoelectric plate. The method of manufacturing the piezoelectric acoustic wave device includes the steps of forming a depression in at least one of the substrate and the piezoelectric plate, filling the depression with an intermediate support layer, cleaning the surfaces of the substrate and the piezoelectric plate to directly bond to each other by a chemical bond, forming electrodes, and removing the intermediate support layer.

Method of manufacturing a piezoelectric acoustic wave device

Methods of manufacture for electronic components having high-frequency

The following steps are performed when processing electronic components such as piezoelectric devices. At Step 1 inter-atom bond is created between a functional member such as a quartz crystal plate and a first substrate, and the functional member and the quartz crystal plate are directly joined together. At Step 2, the functional member and a second substrate are fixed together with an adhesive agent or by a direct bond. At Step 3, the first substrate is removed chemically or mechanically, with said functional member and said second substrate still being joined together. A step of polishing said functional member for the adjustment of thickness thereof may be done between Step 1 and Step 2. For example, a silicon dioxide thin film may be provided between the functional member and the first substrate. Since no adhesive layer exists between the functional member and the first substrate, this improves the degree of plane of the functional member when joined to the first substrate. Therefore, functional member thickness accuracy becomes extremely high and mass productivity is also improved.

Growing community of inventors

Neyagawa, Japan

Akihiro Kanaboshi