Panasonic Intellectual Property Management Co., Ltd.

Ykk Corporation

Kyoto Municipal Institute of Industrial Technology and Culture

Akihiro Itou

Shogo Okita

Atsushi Harikai

Noriyuki Matsubara

Hidefumi Saeki

Mitsuru Hiroshima

Toshiyuki Takasaki

Tetsuya Asano

Takashi Nishihara

Yuji Zenitani

Katsumi Takano

Hidehiko Karasaki

Hiroki Takeuchi

Kazuya Mizumoto

Kazuo Kitagawa

Saifullah Badar

Koji Tamura

Takeshi Senba

The element chip manufacturing method includes: a preparing process of preparing a substrateincluding a plurality of element regions EA and a dividing region DA, the substratehaving a first principal surfaceX and a second principal surfaceY; a groove forming process of forming a groovein the dividing region DA from the first principal surfaceX side; and a grinding process of grinding the substratefrom the second principal surfaceY side, to divide the substrateinto a plurality of element chips. The grooveincludes a first regionconstituted by a side surface having a first surface roughness, and a second regionconstituted by a side surface having a second surface roughness larger than the first surface roughness. In the grinding process, grinding of the substrateis performed until reaching the first regionof the groove

Element chip manufacturing method

A plasma processing method including: a process of placing a work piece on a stage provided in a chamber, the work piece including a substrate and a holding member having an adhesive layer on a surface and holding the substrate via the adhesive layer, and having an exposed portion where the adhesive layer is exposed outside the substrate; and a plasma etching process of etching the substrate with a plasma generated in the chamber, with the exposed portion exposed to the plasma. In response to occurrence of an interruption in the plasma etching process, a cleaning process of exposing a surface of the substrate to a plasma containing an oxidizing gas is performed, and then the plasma etching process is resumed.

Plasma processing method

An etching method including: a preparation step of preparing a resin layer and an electronic component supported thereby; and a resin etching step of etching the resin layer. The electronic component has a first surface covered with a protective film, a second surface opposite thereto, and a sidewall therebetween. The second surface is facing the resin layer. The resin layer is larger than the electronic component when seen from the first surface side. The resin etching step includes: a deposition step of depositing a first film, using a first plasma, on a surface of the protective film and a surface of the resin layer; and a removal step of removing, using a second plasma, the first film deposited on the resin layer and at least part of the resin layer. The deposition and removal steps are alternately repeated, with the protective film allowed to continue to exist.

Etching method and element chip manufacturing method

An element chip manufacturing method including: attaching a substrate via a die attach film (DAF) to a holding sheet; forming a protective film that covers the substrate; forming an opening in the protective film with a laser beam, to expose the substrate in the dicing region therefrom; exposing the substrate to a first plasma to etch the substrate exposed from the opening, so that a plurality of element chips are formed from the substrate and so that the DAF is exposed from the opening; exposing the substrate to a second plasma to etch the die attach film exposed from the opening, so that the DAF is split so as to correspond to the element chips; and detaching the element chips from the holding sheet, together with the split DAF. The DAF is larger than the substrate. The method includes irradiating the laser beam to the DAF protruding from the substrate.

Element chip isolation method using laser grooving and plasma etching

An element chip smoothing method including: an element chip preparation step of preparing at least one element chip including a first surface covered with a resin film, a second surface opposite the first surface, and a sidewall connecting the first surface to the second surface and having ruggedness; a sidewall cleaning step of exposing the element chip to a first plasma, to remove deposits adhering to the sidewall, with the resin film allowed to continue to exist; a sidewall oxidation step of exposing the element chip to a second plasma, after the sidewall cleaning step, to oxidize a surface of the sidewall, with the resin film allowed to continue to exist; and a sidewall etching step of exposing the element chip to a third plasma, after the sidewall oxidation step, to etch the sidewall, with the resin film allowed to continue to exist.

Element chip smoothing method and element chip manufacturing method

An element chip cleaning method including: an element chip preparation step of preparing at least one element chip having a first surface and a second surface opposite the first surface, the first surface covered with a resin film; a first cleaning step of bringing a first cleaning liquid into contact with the resin film, the first cleaning liquid including a solvent that dissolves at least part of a resin component contained in the resin film; and a second cleaning step of spraying a second cleaning liquid against the resin film from the first surface side of the element chip, after the first cleaning step.

Element chip cleaning method, element chip cleaning apparatus, and element chip manufacturing method

An element chip manufacturing method including: a preparing step of preparing a substrate including a plurality of element regions and a dicing region defining the element regions, the substrate having a first surface and a second surface opposite the first surface; a laser scribing step of applying a laser beam to the dicing region from a side of the first surface, to form a groove corresponding to the dicing region and being shallower than a thickness of the substrate; a cleaning step of exposing the first surface of the substrate to a first plasma, to remove debris on the groove; and a dicing step of exposing the substrate at a bottom of the groove to a second plasma after the cleaning step, to dice the substrate into element chips including the element regions. The first plasma is generated from a process gas containing a carbon oxide gas.

An element chip manufacturing method including: a preparing step of preparing a first conveying carrier including a holding sheet and a frame, and a substrate held on the holding sheet, the holding sheet having a first surface and a second surface opposite the first surface, the frame attached to at least part of a peripheral edge of the holding sheet; a placing step of placing the first conveying carrier holding the substrate, on a second conveying carrier; a preprocessing step of preprocessing the substrate, after the placing step; a removing step of removing the second conveying carrier, after the preprocessing step; and a dicing step of subjecting the substrate held on the first conveying carrier to plasma exposure, after the removing step, to form a plurality of element chips from the substrate.

Provided is a manufacturing process of an element chip, which comprises a preparation step, a setting step for setting the substrate on a stage, and a plasma-dicing step for dividing the substrate into a plurality of element chips, wherein the plasma-dicing step is achieved by repeatedly implementing etching routines each including an etching step for etching the second layer along the street regions to form a plurality of grooves and a depositing step for depositing a protective film on inner walls of the grooves, wherein the plasma-dicing step includes a first etching step for forming the grooves each having a first scallop on the inner wall thereof at a first pitch, and a second etching step for forming the grooves each having a second scallop on the inner wall thereof at a second pitch, and wherein the second pitch is greater than the first pitch.

Element chip and manufacturing process thereof

A manufacturing process of an element chip comprises steps of preparing a substrate including dicing regions and element regions, attaching a holding sheet held on a frame with a die attach film in between, forming a protective film covering the substrate, forming a plurality of grooves in the protective film along the dicing regions, plasma-etching the substrate to expose the die attach film and then die attach film along the dicing regions, and picking up each of the element chips along with the separated die attach film away from the holding sheet, wherein the die attach film has an area greater than that of the substrate, and wherein the protective film includes a first covering portion covering the substrate and a second covering portion covering at least a portion of the die attach film that extends beyond an outer edge of the substrate.

Manufacturing process of element chip

Provided is a plasma processing method which comprises steps of preparing a conveying carrier including a holding sheet and a frame provided on a peripheral region of the holding sheet, adhering the substrate on the holding sheet in an inner region inside the peripheral region to hold the substrate on the conveying carrier, sagging the holding sheet in the inner region, setting the conveying carrier on a stage provided within a plasma processing apparatus to contact the holding sheet on the stage so that the holding sheet in the inner region touches the stage before the holding sheet in the peripheral region does, and plasma processing the substrate.

A semiconductor chip manufacturing method includes preparing a semiconductor wafer including a front surface on which a bump is exposed, a rear surface located at a side opposite to the front surface, a plurality of element regions in each of which the bump is formed, and a dividing region defining each of the element regions, forming a mask which covers the bump and has an opening exposing the dividing region on the surface of the semiconductor wafer by spraying liquid which contains raw material of the mask along the bump by a spray coating method, and singulating the semiconductor wafer by exposing the surface of the semiconductor wafer to first plasma and etching the dividing region, which is exposed to the opening, until the rear surface is reached in a state where the bump is covered by the mask.

Provided is a method of manufacturing a semiconductor chip, the method comprising: preparing a plurality of semiconductor chips, each of which has a surface to which a BG tape is stuck, and a rear surface to which a DAF is stuck, and which are held spaced from each other by the BG tape and the DAF, exposing the DAF between semiconductor chips that are adjacent to each other when viewed from the surface side, by stripping the BG tape from the surface of each of the plurality of semiconductor chips, etching the DAF that is exposed between the semiconductor chips that are adjacent to each other, by irradiating the plurality of semiconductor chips held on the DAF, with plasma.

A plasma processing method includes a mounting process of mounting a holding sheet holding a substrate in a stage provided in a plasma processing apparatus, and a fixing process of fixing the holding sheet to the stage. The plasma processing method further includes a determining process of determining whether or not a contact state of the holding sheet with the stage is good or bad after the fixing process, and a plasma etching process of etching the substrate by exposing a surface of the substrate to plasma on the stage, in a case in which the contact state is determined to be good in the determining process.

Plasma processing method and plasma processing apparatus

A method of manufacturing a semiconductor chip includes: preparing a semiconductor wafer; forming a mask on a front surface of the semiconductor wafer so as to cover each of the element regions and to expose the dividing region; exposing the front surface to plasma in a state where a back surface of the semiconductor wafer is held with a dicing tape to dice the semiconductor wafer into a plurality of semiconductor chips by etching the dividing region exposed from the mask up to the back surface while protecting each of the element regions with the mask from plasma; and removing the mask from the front surface together with an adhesive tape by peeling off the adhesive tape after sticking the adhesive tape to the side of the front surface.

Growing community of inventors

Kyoto, Japan

Akihiro Itou