Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Akihiro Isozaki

Toshiya Yokogawa

Atsushi Yamada

Mitsuaki Oya

Akira Inoue

A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; an active layer regionwhich includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrodewhich is electrically connected to the n-type nitride semiconductor layer; a p-type electrodewhich is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structurewhich is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.

Semiconductor light emitting element

A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structurewhich includes a p-type semiconductor region with a surfacebeing inclined from the m-plane by an angle of not less than 1&#xb0; and not more than 5&#xb0;; and an electrodeprovided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlInGaN (where x+y+z=1, x&#x2267;0, y&#x2267;0, and z&#x2267;0) layer. The electrodeincludes a Mg layerand an Ag layerprovided on the Mg layer. The Mg layeris in contact with the surfaceof the p-type semiconductor region of the semiconductor multilayer structure

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A nitride-based semiconductor light-emitting deviceincludes: a GaN substratewith an m-plane surface; a semiconductor multilayer structureprovided on the m-plane surfaceof the GaN substrate; and an electrodeprovided on the semiconductor multilayer structure. The electrodeincludes a Zn layerand a metal layerprovided on the Zn layer. The Zn layeris in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure

Nitride semiconductor element having electrode on m-plane and method for producing the same

A nitride-based semiconductor light-emitting deviceincludes: a GaN substratewith an m-plane surface; a semiconductor multilayer structureprovided on the m-plane surfaceof the GaN substrate; and an electrodeprovided on the semiconductor multilayer structure. The electrodeincludes a Zn layerand an Ag layerprovided on the Zn layer. The Zn layeris in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure

A nitride-based semiconductor light-emitting deviceincludes: a GaN substratewith an m-plane surface; a semiconductor multilayer structureprovided on the m-plane surfaceof the GaN substrate; and an electrodeprovided on the semiconductor multilayer structure. The electrodeincludes an Mg layerand an Ag layerprovided on the Mg layer. The Mg layeris in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure

Growing community of inventors

Osaka, Japan

Akihiro Isozaki